2N7002L vs BSS169H6327XTSA1 비교
다음의 상세 나란히 비교: 2N7002L 제조: onsemi 및 BSS169H6327XTSA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | 2N7002L | BSS169H6327XTSA1 |
|---|---|---|
| 브랜드 | onsemi | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.03 | $0.15 |
| 트랜지스터 유형 | N-Channel Enhancement Mode MOSFET | — |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) | 115 mA (Ta) | 170 mA (Ta) |
| On-State Resistance (RDS(on)) | 7.5 ohm max at VGS = 5V | — |
| Gate-Source Voltage (VGS) | +/-20 V | — |
| Gate Threshold Voltage (VGS(th)) | 1 V to 2.5 V | Pinch-off approx. -3.5 V (typical) |
| Power Dissipation (PD) | 200 mW (Ta), 225 mW max | 360 mW (Ta) |
| Technology | High cell density trench MOSFET | Depletion-mode vertical DMOS |
| 실장 유형 | Surface Mount | Surface Mount |
| 패키지 | SOT-23 (SOT-23-3) | PG-SOT23 (SOT-23-3) |
| Configuration | Single FET | — |
| Switching Performance | Fast switching, rugged and reliable | — |
| Gate Drive | 5V logic-level enhancement mode | — |
| Typical Applications | Low-side switching, servo motor control, gate driving, logic-level shifting | — |
| Manufacturer | onsemi | — |
| RoHS 상태 | [DATA_NEEDED: RoHS status] | Compliant |
| FET Type | — | N-Channel Depletion Mode |
| Drain-to-Source Voltage (VDS) | — | 100 V |
| RDS(on) Maximum | — | 6 Ohm at VGS=0 V |
| Gate-Source Voltage (VGS) Max | — | [DATA_NEEDED: VGS absolute maximum rating] |
| 동작 온도 범위 | — | [DATA_NEEDED: junction/ambient operating temperature range] |
| 핀 수 | — | 3 |
| MSL 레벨 | — | 1 (per JEDEC J-STD-020) |
| Lead-Free | — | Yes |
| Drain Current at 25C | — | 170 mA continuous |
| Typical RDS(on) | — | [DATA_NEEDED: typical RDS(on) value] |