BSC155N06NDATMA1 vs BSC027N10NS5ATMA1 비교
다음의 상세 나란히 비교: BSC155N06NDATMA1 제조: Infineon 및 BSC027N10NS5ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | BSC155N06NDATMA1 | BSC027N10NS5ATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | NRND |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.62 | $1.10 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC155N06NDATMA1 | BSC027N10NS5ATMA1 |
| Technology | OptiMOS 3 (N-channel trench) | OptiMOS 5 (100V) |
| Configuration | Dual N-channel MOSFET array | — |
| Drain-to-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at Tc=25C | 20 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | 194 A |
| On-State Resistance RDS(on) max at VGS=10V | 15.5 mOhm | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| 동작 온도 범위 | -55 C to +175 C | [DATA_NEEDED: Tj min/max] |
| 패키지 | PG-TDSON-8-4 (SuperSO8 5x6 mm) | PG-TSON-8-3 (SuperSO8 5x6 mm) |
| 실장 유형 | Surface Mount | Surface Mount |
| Power Dissipation (Tc=25C) | 50 W | — |
| MSL 레벨 | 1 | [DATA_NEEDED: MSL rating] |
| RoHS 상태 | Compliant (Pb-free plating) | Compliant |
| Lead-Free Plating | Yes | — |
| Shoot-Through Immunity Qgd/Qgs | < 0.8 | — |
| Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 100 V |
| Gate-Source Voltage (VGS) Max | — | [DATA_NEEDED: VGS max rating] |
| Continuous Drain Current (ID) at Ta | — | 23 A |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| On-Resistance RDS(on) Max at VGS=10V | — | 2.7 mOhm |
| Power Dissipation (Ta) | — | 3 W |
| Power Dissipation (Tc) | — | 214 W |
| Qualification | — | Industrial (AEC-Q101 variant BSC027N10NS5 exists separately) |