EP3SE260H780C3N vs EP3SE260F1152C3N 비교

다음의 상세 나란히 비교: EP3SE260H780C3N 제조: Intel 및 EP3SE260F1152C3N 제조: Intel. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 EP3SE260H780C3N EP3SE260F1152C3N
브랜드 Intel Intel
카테고리 FPGA & CPLD FPGA & CPLD
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $1,325.00 $7,500.00
Series Stratix® III E Stratix III E
Logic Elements (LE) 255,000 —
Embedded Memory (bits) 16,672,768 —
Number of LABs/CLBs 10,200 —
User I/Os 488 —
Number of Pins / Balls 780 —
패키지 780-BBGA, FCBGA (H780) 1152-BBGA, FCBGA
실장 유형 Surface Mount Surface Mount
동작 온도 0 °C to +85 °C (C grade, commercial) 0 C to +85 C (Commercial)
Process Technology 40 nm CMOS 65 nm
Maximum Core Frequency [DATA_NEEDED: maximum core frequency MHz] —
Supply Voltage (VCCINT) [DATA_NEEDED: VCCINT nominal V] —
Transceivers [DATA_NEEDED: number of embedded transceivers and max data rate] Integrated high-speed transceivers
DSP Blocks [DATA_NEEDED: number of DSP blocks and precision] Yes (dedicated multiplier/accumulator)
RoHS 상태 Compliant (lead-free 'N' suffix) Compliant
습도 민감도 레벨 (MSL) [DATA_NEEDED: MSL level per JEDEC J-STD-020] —
Configuration Method SRAM-based, configured via JTAG / passive / active serial / fast passive parallel —
Design Toolchain Altera Quartus II (legacy); Intel Quartus Prime —
Logic Elements / Cells — 255,000
Embedded Memory Bits — 16,672,768 bits
Logic Array Blocks (LABs) — 10,200
User I/O Count — 744
Core Voltage — 1.1 V
Embedded Memory Type — TriMatrix (true dual-port, FIFO, ROM, RAM)
External Memory Support — DDR3, DDR2, QDR II+, RLDRAM II
Configuration Modes — AS, AP, PS, FPP, JTAG
Partial Reconfiguration — Supported
Programmable Power Technology — Yes (up to 50% dynamic power reduction)

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