FS35R12W1T4-T7 vs FS35R12W1T4 비교

다음의 상세 나란히 비교: FS35R12W1T4-T7 제조: Infineon 및 FS35R12W1T4 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 FS35R12W1T4-T7 FS35R12W1T4
브랜드 Infineon Infineon
카테고리 IGBTs IGBTs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $30.25 $22.80
토폴로지 Sixpack (three-phase inverter) + brake chopper Six-pack (3-phase inverter)
Collector-Emitter Voltage (Vces) 1200 V —
Nominal Collector Current (Ic nom) 35 A —
Pulsed Collector Current 65 A —
Total Power Dissipation 225 W —
IGBT Generation TRENCHSTOP IGBT4 —
Diode Generation Emitter Controlled 4 (EC4) —
Integrated NTC Yes (temperature monitoring) Yes
Package Family EasyPACK 1B —
Contact Technology Solder (T7 variant) —
실장 유형 Chassis Mount Screw-mount power terminals, PressFIT-pin option (FS35R12W1T4_B11)
Module Configuration 6 IGBTs + 6 diodes + brake chopper + NTC —
RoHS Compliance Compliant —
Application Class Industrial / Motor Drive / Solar —
Datasheet Source Infineon manufacturer datasheet —
Manufacturer — Infineon Technologies
Collector-Emitter Voltage (VCE) — 1200 V
Nominal Collector Current (IC nom) — 35 A
DC Collector Current — 65 A (per Mouser listing, TC limited)
IGBT Technology — TRENCHSTOP IGBT4 (Trench/Field-stop)
Diode Technology — Emitter Controlled 4 (EC4)
패키지 — EasyPACK 1B (baseplate-less)
동작 접합 온도 — -40 C to +150 C
Configuration — 6 IGBTs + 6 freewheeling diodes
RoHS 상태 — Compliant
Short-Circuit Withstand Time — 10 us (typical for IGBT4 class)
Datasheet Document Length — 9 pages (per AllDatasheet mirror)
Power Dissipation Range — 135 W - 275 W (EasyPACK 1B family)

데이터시트 & 자료

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