IAUCN04S7N006ATMA1 vs IAUCN08S7N024ATMA1 비교
다음의 상세 나란히 비교: IAUCN04S7N006ATMA1 제조: Infineon 및 IAUCN08S7N024ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IAUCN04S7N006ATMA1 | IAUCN08S7N024ATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.95 | $0.89 |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 40 V | 80 V |
| Continuous Drain Current (ID) | 175 A | — |
| On-State Resistance (RDS(on)) | 0.63 mOhm (typ at VGS = 10 V) | — |
| Gate-Source Voltage (VGS) Max | [DATA_NEEDED: VGS max rating] | — |
| Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| Technology | OptiMOS 5 (trench) | OptiMOS 7 trench |
| 패키지 | PG-TDSON-8-43 | PG-TDSON-8-34 (8-pin, exposed pad) |
| 실장 유형 | Surface Mount | Surface Mount |
| 동작 온도 범위 | -55 C to +175 C | -55C to +175C (typical automotive) |
| Junction Temperature Max | 175 C | — |
| Power Dissipation Max (Pd) | [DATA_NEEDED: Pd max] | — |
| Gate Charge Total (Qg) | [DATA_NEEDED: Qg total] | — |
| Automotive Qualification | AEC-Q101 | AEC-Q101 |
| Lead-Free / RoHS | Yes (compliant) | — |
| MSL 레벨 | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL rating] |
| Manufacturer | — | Infineon Technologies |
| Series | — | Automotive OptiMOS 7 (80 V) |
| Continuous Drain Current (ID) at TC=25C | — | 165 A |
| Drain-Source On-Resistance (RDS(on)) max | — | 2.4 mOhm |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typ/min/max] |
| 전력 손실 (Ptot) | — | [DATA_NEEDED: Ptot @ TC=25C] |
| RoHS Compliance | — | Compliant |
| Typical Application | — | 48 V automotive DC-DC, motor drive, load switch |