IAUCN04S7N006ATMA1 vs IAUCN08S7N024ATMA1 Comparison

Detailed side-by-side comparison of IAUCN04S7N006ATMA1 by Infineon and IAUCN08S7N024ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IAUCN04S7N006ATMA1 IAUCN08S7N024ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
FET Type N-Channel N-Channel
Drain-Source Voltage (VDS) 40 V 80 V
Continuous Drain Current (ID) 175 A —
On-State Resistance (RDS(on)) 0.63 mOhm (typ at VGS = 10 V) —
Gate-Source Voltage (VGS) Max [DATA_NEEDED: VGS max rating] —
Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
Technology OptiMOS 5 (trench) OptiMOS 7 trench
Package PG-TDSON-8-43 PG-TDSON-8-34 (8-pin, exposed pad)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55 C to +175 C -55C to +175C (typical automotive)
Junction Temperature Max 175 C —
Power Dissipation Max (Pd) [DATA_NEEDED: Pd max] —
Gate Charge Total (Qg) [DATA_NEEDED: Qg total] —
Automotive Qualification AEC-Q101 AEC-Q101
Lead-Free / RoHS Yes (compliant) —
MSL Level [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL rating]
Manufacturer — Infineon Technologies
Series — Automotive OptiMOS 7 (80 V)
Continuous Drain Current (ID) at TC=25C — 165 A
Drain-Source On-Resistance (RDS(on)) max — 2.4 mOhm
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typ/min/max]
Power Dissipation (Ptot) — [DATA_NEEDED: Ptot @ TC=25C]
RoHS Compliance — Compliant
Typical Application — 48 V automotive DC-DC, motor drive, load switch

Datasheets & Resources

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