IAUCN04S7N006ATMA1 vs IAUCN08S7N024ATMA1 对比
详细并排对比 IAUCN04S7N006ATMA1 出自 Infineon 和 IAUCN08S7N024ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IAUCN04S7N006ATMA1 | IAUCN08S7N024ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.95 | $0.89 |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 40 V | 80 V |
| Continuous Drain Current (ID) | 175 A | — |
| On-State Resistance (RDS(on)) | 0.63 mOhm (typ at VGS = 10 V) | — |
| Gate-Source Voltage (VGS) Max | [DATA_NEEDED: VGS max rating] | — |
| Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| Technology | OptiMOS 5 (trench) | OptiMOS 7 trench |
| 封装 | PG-TDSON-8-43 | PG-TDSON-8-34 (8-pin, exposed pad) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度范围 | -55 C to +175 C | -55C to +175C (typical automotive) |
| Junction Temperature Max | 175 C | — |
| Power Dissipation Max (Pd) | [DATA_NEEDED: Pd max] | — |
| Gate Charge Total (Qg) | [DATA_NEEDED: Qg total] | — |
| Automotive Qualification | AEC-Q101 | AEC-Q101 |
| Lead-Free / RoHS | Yes (compliant) | — |
| MSL 等级 | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL rating] |
| Manufacturer | — | Infineon Technologies |
| Series | — | Automotive OptiMOS 7 (80 V) |
| Continuous Drain Current (ID) at TC=25C | — | 165 A |
| Drain-Source On-Resistance (RDS(on)) max | — | 2.4 mOhm |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typ/min/max] |
| 功耗（Ptot） | — | [DATA_NEEDED: Ptot @ TC=25C] |
| RoHS Compliance | — | Compliant |
| Typical Application | — | 48 V automotive DC-DC, motor drive, load switch |