IAUCN08S7L018ATMA1 vs IAUC120N06S5L015ATMA1 비교
다음의 상세 나란히 비교: IAUCN08S7L018ATMA1 제조: Infineon 및 IAUC120N06S5L015ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IAUCN08S7L018ATMA1 | IAUC120N06S5L015ATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $1.55 | $0.92 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 7 | — |
| Technology | N-Channel Trench MOSFET | N-Channel MOSFET (OptiMOS 5) |
| Drain-Source Voltage (VDS) | 80 V | 60 V |
| Continuous Drain Current (ID) at Tj | 210 A | — |
| Continuous Drain Current (ID) at Tc | [DATA_NEEDED: ID at Tc] | — |
| Maximum RDS(on) at VGS=10 V | 1.8 mΩ | — |
| Power Dissipation (PD) at Tc=25 °C | 169 W | — |
| 동작 온도 범위 | -55 °C to +175 °C | -55C to +175C (Tj) |
| 패키지 | PG-TDSON-8-43 (5x6 mm) | PG-TDSON-8-43 (Surface Mount) |
| 실장 유형 | Surface Mount | Surface Mount (exposed pad) |
| Qualification | Automotive (per Infineon part description) | — |
| Gate Drive Voltage (typical) | 10 V | — |
| MSL 레벨 | [DATA_NEEDED: MSL level] | [DATA_NEEDED: MSL level] |
| RoHS 상태 | Compliant | Compliant |
| Continuous Drain Current (ID, Tc=25C) | — | 235 A |
| On-Resistance RDS(on) max (VGS=10 V) | — | 1.5 mΩ |
| Gate Charge (Qg, typ) | — | 88 nC |
| Power Dissipation (PD, Tc=25C) | — | 167 W |
| Automotive Qualification | — | AEC-Q101 qualified |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Drain-Source On-State Resistance Test Conditions | — | VGS = 10 V, ID = 50 A |
| Typical Application | — | Automotive DC-DC, battery switches, motor drives |