IAUCN08S7L018ATMA1 vs IAUC120N06S5L015ATMA1 对比

详细并排对比 IAUCN08S7L018ATMA1 出自 Infineon 和 IAUC120N06S5L015ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IAUCN08S7L018ATMA1 IAUCN08S7L018ATMA1 - 80V 1.8mΩ OptiMOS 7 N-MOSFET | Infineon

IAUCN08S7L018ATMA1 - 80V 1.8mΩ OptiMOS 7 N-MOSFET | Infineon

IAUCN08S7L018ATMA1 ✓ 量产中
Infineon
IAUC120N06S5L015ATMA1 IAUC120N06S5L015ATMA1 - 60V 1.5mΩ OptiMOS 5 N-MOSFET | Infineon

IAUC120N06S5L015ATMA1 - 60V 1.5mΩ OptiMOS 5 N-MOSFET | Infineon

IAUC120N06S5L015ATMA1 ✓ 量产中

规格对比

参数 IAUCN08S7L018ATMA1 IAUC120N06S5L015ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.55 $0.92
Manufacturer Infineon Technologies —
Product Family OptiMOS 7 —
Technology N-Channel Trench MOSFET N-Channel MOSFET (OptiMOS 5)
Drain-Source Voltage (VDS) 80 V 60 V
Continuous Drain Current (ID) at Tj 210 A —
Continuous Drain Current (ID) at Tc [DATA_NEEDED: ID at Tc] —
Maximum RDS(on) at VGS=10 V 1.8 mΩ —
Power Dissipation (PD) at Tc=25 °C 169 W —
工作温度范围 -55 °C to +175 °C -55C to +175C (Tj)
封装 PG-TDSON-8-43 (5x6 mm) PG-TDSON-8-43 (Surface Mount)
安装类型 Surface Mount Surface Mount (exposed pad)
Qualification Automotive (per Infineon part description) —
Gate Drive Voltage (typical) 10 V —
MSL 等级 [DATA_NEEDED: MSL level] [DATA_NEEDED: MSL level]
RoHS 状态 Compliant Compliant
Continuous Drain Current (ID, Tc=25C) — 235 A
On-Resistance RDS(on) max (VGS=10 V) — 1.5 mΩ
Gate Charge (Qg, typ) — 88 nC
Power Dissipation (PD, Tc=25C) — 167 W
Automotive Qualification — AEC-Q101 qualified
Gate-Source Voltage (VGS) max — ±20 V
Drain-Source On-State Resistance Test Conditions — VGS = 10 V, ID = 50 A
Typical Application — Automotive DC-DC, battery switches, motor drives

数据手册与资源

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