IPB037N06N3GATMA1 vs BSC050N04LSGATMA1 비교

다음의 상세 나란히 비교: IPB037N06N3GATMA1 제조: Infineon 및 BSC050N04LSGATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Infineon
BSC050N04LSGATMA1 BSC050N04LSGATMA1 - 40V 85A N-Ch OptiMOS 3 | Infineon

BSC050N04LSGATMA1 - 40V 85A N-Ch OptiMOS 3 | Infineon

BSC050N04LSGATMA1 ✓ 활성

사양 비교

파라미터 IPB037N06N3GATMA1 BSC050N04LSGATMA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $1.41 $0.41
Manufacturer Infineon Technologies —
Part Number IPB037N06N3GATMA1 —
Technology OptiMOS 3 (N-channel, enhancement mode) OptiMOS 3 (trench MOSFET)
Polarity / Channel Type N-Channel —
Drain-Source Voltage (VDS) Max 60 V —
Continuous Drain Current (ID) at Tc 90 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current value] [DATA_NEEDED: pulsed drain current IDM]
On-Resistance RDS(on) Max 3.7 mOhm at VGS=10V —
Gate Threshold Voltage (VGS(th)) 2.0 V to 3.5 V [DATA_NEEDED: VGS(th) typ/min/max]
Total Power Dissipation (Pd) at Tc 188 W —
동작 온도 범위 -55 C to +175 C (junction) -55C to +150C
패키지 / 케이스 PG-TO263-3 (D2PAK, surface mount) —
실장 유형 Surface Mount Surface Mount
Gate Charge (Qg) Typ [DATA_NEEDED: gate charge value] —
RoHS 상태 Compliant Compliant
MSL 레벨 1 (unlimited) 1
Drain Tab Connection Tab electrically tied to drain —
FET Type — N-Channel
Drain-to-Source Voltage (VDS) — 40 V
Gate-to-Source Voltage (VGS) — ±20 V
Continuous Drain Current at 25C (ID, Ta) — 18 A
Continuous Drain Current at 25C (ID, Tc) — 85 A
Power Dissipation at Ta (PD) — 2.5 W
Power Dissipation at Tc (PD) — 57 W
On-State Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) max at VGS=10V]
On-State Resistance (RDS(on)) at VGS=4.5V — [DATA_NEEDED: RDS(on) at VGS=4.5V]
패키지 — PG-TDSON-8-5 (TDSON-8 EP, 5x6 mm)
Avalanche Energy Rated — Yes (single-pulse avalanche)

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