IPB037N06N3GATMA1 vs BSC050N04LSGATMA1 Comparison
Detailed side-by-side comparison of IPB037N06N3GATMA1 by Infineon and BSC050N04LSGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPB037N06N3GATMA1 - 60V 90A 3.7mOhm OptiMOS 3 N-MOSFET D2PAK | Infineon
IPB037N06N3GATMA1 β ActiveInfineon
BSC050N04LSGATMA1
BSC050N04LSGATMA1 - 40V 85A N-Ch OptiMOS 3 | Infineon
BSC050N04LSGATMA1 β ActiveSpecification Comparison
| Parameter | IPB037N06N3GATMA1 | BSC050N04LSGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.41 | $0.41 |
| Manufacturer | Infineon Technologies | β |
| Part Number | IPB037N06N3GATMA1 | β |
| Technology | OptiMOS 3 (N-channel, enhancement mode) | OptiMOS 3 (trench MOSFET) |
| Polarity / Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS) Max | 60 V | β |
| Continuous Drain Current (ID) at Tc | 90 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current value] | [DATA_NEEDED: pulsed drain current IDM] |
| On-Resistance RDS(on) Max | 3.7 mOhm at VGS=10V | β |
| Gate Threshold Voltage (VGS(th)) | 2.0 V to 3.5 V | [DATA_NEEDED: VGS(th) typ/min/max] |
| Total Power Dissipation (Pd) at Tc | 188 W | β |
| Operating Temperature Range | -55 C to +175 C (junction) | -55C to +150C |
| Package / Case | PG-TO263-3 (D2PAK, surface mount) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Gate Charge (Qg) Typ | [DATA_NEEDED: gate charge value] | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 (unlimited) | 1 |
| Drain Tab Connection | Tab electrically tied to drain | β |
| FET Type | β | N-Channel |
| Drain-to-Source Voltage (VDS) | β | 40 V |
| Gate-to-Source Voltage (VGS) | β | Β±20 V |
| Continuous Drain Current at 25C (ID, Ta) | β | 18 A |
| Continuous Drain Current at 25C (ID, Tc) | β | 85 A |
| Power Dissipation at Ta (PD) | β | 2.5 W |
| Power Dissipation at Tc (PD) | β | 57 W |
| On-State Resistance (RDS(on)) | β | [DATA_NEEDED: RDS(on) max at VGS=10V] |
| On-State Resistance (RDS(on)) at VGS=4.5V | β | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Package | β | PG-TDSON-8-5 (TDSON-8 EP, 5x6 mm) |
| Avalanche Energy Rated | β | Yes (single-pulse avalanche) |