IPB037N06N3GATMA1 - 60V 90A 3.7mOhm OptiMOS 3 N-MOSFET D2PAK | Infineon
부품 번호: IPB037N06N3GATMA1 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $2.45 | $2.45 |
| 10 | $2.18 | $21.80 |
| 100 | $1.86 | $186.00 |
| 500 | $1.62 | $810.00 |
| 1,000 | $1.41 | $1,410.00 |
IPB037N06N3GATMA1 개요
What is an OptiMOS power MOSFET? OptiMOS is Infineon's family of medium- and low-voltage N-channel power MOSFETs that sit inside the broader power MOSFET category, which itself is part of the discrete semiconductor hierarchy (MOSFET -> transistor -> discrete semiconductor). OptiMOS 3 specifically targets 40V-300V applications with figure-of-merit improvements over earlier generations, reducing both on-state resistance per unit silicon area and gate charge to enable higher switching frequencies and smaller magnetics in switched-mode designs.
Key features include 60V drain-source breakdown, 3.7 mOhm maximum on-resistance at VGS=10V, gate threshold in the 2.0V-3.5V range, and avalanche-rated single-pulse capability. The D2PAK (TO-263) surface-mount package provides a low thermal resistance path through its drain tab, which doubles as the PCB mounting pad and serves as the primary heatsinking surface.
Architecturally, the IPB037N06N3GATMA1 uses Infineon's strip-cell planar MOSFET layout, which balances low RDS(on) with robust avalanche energy. Compared with older trench generations, OptiMOS 3 retains strong linear-mode ruggedness while pushing switching figures of merit down by roughly 30 percent, making it well suited to hard-switched bridge topologies where both conduction and switching loss matter.
Typical applications include synchronous rectification in 48V telecom and server bus converters, solar micro-inverter switch legs, motor-drive H-bridges below 60V bus, hot-swap and OR-ing controllers, and high-current buck/boost stages in industrial PoL designs. The part is also a frequent companion to gate drivers such as the Infineon EiceDriver family and to digital controllers in digitally-controlled SMPS.
A key design trade-off: despite the 3.7 mOhm RDS(on), the D2PAK package dissipates substantial heat through its drain tab, so PCB copper-pour area (typically 1 sq inch minimum on each side of the board with thermal vias) is essential for sustained full-current operation. Designers must also respect the SOA curve at high VDS and low duty cycles, where transient thermal impedance dominates.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, helping engineers select the IPB037N06N3GATMA1 with full context on sourcing, replacements, and PCB thermal strategy.
드롭인 대체품: IPB037N06N3GATMA1 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: IPB037N06N3GATMA1 (동일 폼 팩터 및 풋프린트) — 차이점: Technology, Operating Temperature Range, Package, MSL Level, Drain-Source Voltage (VDS).
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
IPB034N06L3GATMA1
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
IPB60R040CFD7ATMA1
✅ 드롭인✓ 재고 있음
$5.19 / 개
데이터시트 보기 →IPB100N04S4H2ATMA1
✅ 드롭인✓ 재고 있음
$1.42 / 개
데이터시트 보기 →IPB60R280P7ATMA1
✅ 드롭인✓ 재고 있음
$0.88 / 개
데이터시트 보기 →BSC050N04LSGATMA1
✅ 드롭인✓ 재고 있음
$0.41 / 개
데이터시트 보기 →IPB037N06N3GATMA1 최대 정격 & 전기적 특성
| Manufacturer | Infineon Technologies |
| Part Number | IPB037N06N3GATMA1 |
| Technology | OptiMOS 3 (N-channel, enhancement mode) |
| Polarity / Channel Type | N-Channel |
| Drain-Source Voltage (VDS) Max | 60 V |
| Continuous Drain Current (ID) at Tc | 90 A |
| On-Resistance RDS(on) Max | 3.7 mOhm at VGS=10V |
| Gate Threshold Voltage (VGS(th)) | 2.0 V to 3.5 V |
| Total Power Dissipation (Pd) at Tc | 188 W |
| 동작 온도 범위 | -55 C to +175 C (junction) |
| 패키지 / 케이스 | PG-TO263-3 (D2PAK, surface mount) |
| 실장 유형 | Surface Mount |
| RoHS 상태 | Compliant |
| MSL 레벨 | 1 (unlimited) |
| Drain Tab Connection | Tab electrically tied to drain |
IPB037N06N3GATMA1 핀 구성
| 핀 1 | Gate — MOSFET gate; drive with 10V VGS for full RDS(on) specification |
| 핀 2 | Drain — MOSFET drain (also tied to metal tab on bottom of package) |
| 핀 3 | Source — MOSFET source; primary reference for gate drive and current sensing |
| 핀 TAB | Drain Tab — Metal back-tab electrically and thermally connected to drain; solder to PCB copper pour |
안전 동작 영역 (DC)
일반적인 애플리케이션
IPB037N06N3GATMA1 적합 용도: 6 애플리케이션s: Synchronous Rectification in 48V SMPS, Solar Micro-Inverter Switch Leg, 48V Hot-Swap and OR-ing Controller, Industrial DC Motor Drive H-Bridge, High-Current Buck/Boost POL Converter, Battery Protection and Load Switch in 48V Systems.
Synchronous Rectification in 48V SMPS
The IPB037N06N3GATMA1 is a strong fit for 48V telecom and server bus converters where its 60V VDS rating provides 20 percent headroom above the nominal bus, and the 3.7 mOhm RDS(on) keeps conduction losses well under 2 percent at 30A load per leg. In a typical two-transistor forward or bridge-less totem-pole rectifier, the MOSFET switches at 100-300 kHz, where the OptiMOS 3 figure-of-merit minimizes the loss crossover between conduction and switching. The 90A continuous rating at Tc supports the high peak currents typical of 1-3 kW rectifier stages. Place the device drain tab on a minimum 1 sq inch of 2 oz copper with thermal vias to the inner layer, and pair it with an isolated gate driver such as 1ED020I12B2XUMA1 for high-side drive.
추천
Solar Micro-Inverter Switch Leg
In solar micro-inverters that convert 28-60V panel output to 230V AC grid, the IPB037N06N3GATMA1 is used in the primary-side high-frequency bridge leg. Its 60V VDS rating handles the panel Voc plus transient ringing, and the 3.7 mOhm RDS(on) at 10V VGS keeps inverter efficiency above 96 percent. The D2PAK package dissipates heat effectively when bonded to a copper pour sized to 1.5 sq inches minimum. Designers prefer OptiMOS 3 here because the avalanche energy rating supports the unclamped inductive switching events seen during grid-side faults. The device pairs naturally with a CoolMOS high-voltage secondary MOSFET for a complete two-stage inverter topology.
추천
48V Hot-Swap and OR-ing Controller
The IPB037N06N3GATMA1 is widely used as the pass element in 48V hot-swap and OR-ing circuits in telecom rectifiers and server power shelves. At 48V nominal, the 60V VDS rating provides comfortable margin, while the 3.7 mOhm RDS(on) yields only 270 mW of conduction loss at 30A. In an OR-ing configuration, two MOSFETs back-to-back or in common-drain arrangement minimize body-diode conduction during input switchover. The 90A continuous rating exceeds the typical 40-60A OR-ing current, providing a 50 percent safety margin. Designers commonly drive the gate with a dedicated hot-swap controller such as the ADM1275 or LTC4282 to limit inrush and provide current telemetry.
추천
Industrial DC Motor Drive H-Bridge
For industrial DC and low-voltage BLDC motor drives on 24V or 48V rails, the IPB037N06N3GATMA1 serves as the low-side switch in an H-bridge. The 3.7 mOhm RDS(on) reduces I-squared-R heating during stall and start-up events, and the 90A rating covers motors up to 4 kW. The D2PAK package handles the high di/dt loop energy typical of PWM-modulated motor currents. The part pairs well with the Infineon TLE94110ESXUMA1 multi-half-bridge driver, which integrates charge pump, dead-time generation, and current-sense amplifiers for a complete small-form-factor motor control board.
추천
High-Current Buck/Boost POL Converter
In point-of-load (POL) converters for FPGA and ASIC power rails delivering 20-60A from a 24V or 48V intermediate bus, the IPB037N06N3GATMA1 serves as the high-side or low-side switch with current-mode control. The 60V VDS rating tolerates transient overshoots on a 48V bus, and the 3.7 mOhm RDS(on) keeps full-load efficiency above 95 percent. The OptiMOS 3 low Qg allows switching frequencies up to 500 kHz, shrinking inductor size. Mount the D2PAK tab on a 2 oz copper pour with at least six thermal vias to the inner ground plane for reliable thermal performance at 30-40A continuous output.
추천
Battery Protection and Load Switch in 48V Systems
The IPB037N06N3GATMA1 is used as a low-loss load-disconnect switch in 48V lithium-ion battery packs and industrial energy-storage systems. At 48V nominal, the 60V VDS rating safely handles the 4.2V per-cell transients of a 14S pack. The 3.7 mOhm RDS(on) limits steady-state loss to 330 mW at 30A discharge, much better than relay-based disconnect. The part supports reverse-battery protection when paired with a Schottky clamp, and its avalanche rating allows safe turn-off of inductive battery cable loads. Pair it with the BTS71220-4ESA smart high-side switch IC for a fully protected battery interface.
추천
추천 제품 요약
엔지니어링 참조 데이터: IPB037N06N3GATMA1 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | IPB034N06L3GATMA1 | IPB60R040CFD7ATMA1 | IPB100N04S4H2ATMA1 | BSC050N04LSGATMA1 |
|---|---|---|---|---|---|
| Package | PG-TO263-3 (D2PAK) | PG-TO263-3 (D2PAK) - same | PG-TO263-3 (D2PAK) - same | PG-TO263-3 (D2PAK) - same | PG-TDSON-8 (DFN5x6) - differs |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| VDS Max | 60 V | 60 V | 600 V | 40 V | 40 V |
| RDS(on) Max at VGS=10V | 3.7 mOhm | 3.4 mOhm | 40 mOhm | 10 mOhm | 5.0 mOhm |
| Continuous Drain Current (Tc) | 90 A | 100 A | 31 A | 100 A | 80 A |
| Technology Family | OptiMOS 3 | OptiMOS 3 | CoolMOS CFD7 | OptiMOS 5 | OptiMOS 5 |
| Power Dissipation (Tc) | 188 W | 192 W | 104 W | 167 W | 83 W |
| Mounting Type | Surface Mount (D2PAK) | Surface Mount (D2PAK) | Surface Mount (D2PAK) | Surface Mount (D2PAK) | Surface Mount (DFN) |
| Approximate Unit Price (qty 100) | $1.86 | $2.10 | $2.50 | $1.95 | $1.40 |
주요 차별점
- Lowest RDS(on) in the 60V D2PAK Infineon OptiMOS 3 family (vs IPB034N06L3GATMA1)
- 60V rating versus 40V competitor (vs IPB100N04S4H2ATMA1)
- Same-package drop-in versus 600V CoolMOS family (vs IPB60R040CFD7ATMA1)
설계 노트
Estimated: at 90A continuous drain current, 3.7 mOhm RDS(on), and 50 percent duty cycle in a typical 48V-to-12V synchronous buck, the IPB037N06N3GATMA1 dissipates approximately 15W (P=I^2*R*D). With the D2PAK junction-to-ambient thermal resistance of 40 C/W on 1 sq inch of 2 oz copper, the junction temperature rises 600C above ambient - clearly impossible. This confirms that at 90A the device must be either heatsinked, mounted on 6+ sq inches of copper with thermal vias, or operated in pulsed mode. For sustained 30-40A applications, target junction temperature below 100C for long-term reliability.
The D2PAK drain tab is electrically and thermally connected to the drain, so PCB layout must isolate the tab copper pour from low-side signal traces. Use a minimum 1 sq inch of 2 oz copper on the top layer beneath the tab, plus an array of at least nine 0.3 mm thermal vias to the bottom layer and an inner ground plane. Keep the source-sense Kelvin connection as short as possible to avoid adding gate-loop inductance that could cause ringing at VDS turn-off.
Do not exceed 60V VDS even transiently; inductive voltage spikes from diode reverse recovery or wiring inductance can exceed 80V on a 48V bus. Add a snubber (10 ohm + 1 nF) or TVS clamp (60V SMBJ series) directly across drain-to-source. Also ensure the gate driver delivers at least 10V VGS for full RDS(on) - driving from 4.5V (logic level) will multiply RDS(on) by roughly 3x and destroy the thermal budget. Per the datasheet, gate-source voltage must stay within +/-20V to avoid oxide rupture.
Minimize the high-di/dt loop formed by drain-tab to source-pin; this loop inductance generates VDS overshoot at turn-off. Place input bypass capacitors (>=1 uF X7R) within 5 mm of the drain-source pins. For synchronous rectifier applications, the IPB037N06N3GATMA1 should be placed with its body diode oriented so that it does not conduct during normal forward operation - the controller should turn on the channel before inductor current reverses.
규정 준수 정보
RoHS compliant per Infineon product page. Not AEC-Q100 qualified - this part is not automotive grade. Halogen-free per JEDEC JS709B. Conflict minerals compliant per Infineon CMRT.
