IPB068N20NM6ATMA1 vs BSC050N04LSGATMA1 비교
다음의 상세 나란히 비교: IPB068N20NM6ATMA1 제조: Infineon 및 BSC050N04LSGATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IPB068N20NM6ATMA1 | BSC050N04LSGATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.99 | $0.41 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 6 | — |
| 트랜지스터 유형 | N-Channel MOSFET | — |
| Technology | OptiMOS 6 charge-compensation trench | OptiMOS 3 (trench MOSFET) |
| Drain-Source Voltage (VDS) | 200 V | — |
| Continuous Drain Current (ID) at TA | 15.4 A | — |
| Continuous Drain Current (ID) at TC | 134 A | — |
| Power Dissipation (PD) at TA | 3.8 W | — |
| Power Dissipation (PD) at TC | 300 W | — |
| On-Resistance RDS(on) max | 68 milliohm | — |
| RDS(on) Improvement vs Prior Generation | 42% lower | — |
| 패키지 | PG-TO263-3-2 (D2PAK, surface mount) | PG-TDSON-8-5 (TDSON-8 EP, 5x6 mm) |
| 핀 수 | 3 (2 + tab) | — |
| 실장 유형 | Surface Mount | Surface Mount |
| Tape and Reel Packaging | Yes (ATMA1 suffix = T&R) | — |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 40 V |
| Gate-to-Source Voltage (VGS) | — | ±20 V |
| Continuous Drain Current at 25C (ID, Ta) | — | 18 A |
| Continuous Drain Current at 25C (ID, Tc) | — | 85 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current IDM] |
| Power Dissipation at Ta (PD) | — | 2.5 W |
| Power Dissipation at Tc (PD) | — | 57 W |
| On-State Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) max at VGS=10V] |
| On-State Resistance (RDS(on)) at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typ/min/max] |
| 동작 온도 범위 | — | -55C to +150C |
| Avalanche Energy Rated | — | Yes (single-pulse avalanche) |
| RoHS 상태 | — | Compliant |
| MSL 레벨 | — | 1 |