IPB068N20NM6ATMA1 vs BSC050N04LSGATMA1 Comparison
Detailed side-by-side comparison of IPB068N20NM6ATMA1 by Infineon and BSC050N04LSGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPB068N20NM6ATMA1 - 200V 68mOhm N-Ch OptiMOS 6 MOSFET | Infineon
IPB068N20NM6ATMA1 β ActiveInfineon
BSC050N04LSGATMA1
BSC050N04LSGATMA1 - 40V 85A N-Ch OptiMOS 3 | Infineon
BSC050N04LSGATMA1 β ActiveSpecification Comparison
| Parameter | IPB068N20NM6ATMA1 | BSC050N04LSGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.99 | $0.41 |
| Manufacturer | Infineon Technologies | β |
| Series | OptiMOS 6 | β |
| Transistor Type | N-Channel MOSFET | β |
| Technology | OptiMOS 6 charge-compensation trench | OptiMOS 3 (trench MOSFET) |
| Drain-Source Voltage (VDS) | 200 V | β |
| Continuous Drain Current (ID) at TA | 15.4 A | β |
| Continuous Drain Current (ID) at TC | 134 A | β |
| Power Dissipation (PD) at TA | 3.8 W | β |
| Power Dissipation (PD) at TC | 300 W | β |
| On-Resistance RDS(on) max | 68 milliohm | β |
| RDS(on) Improvement vs Prior Generation | 42% lower | β |
| Package | PG-TO263-3-2 (D2PAK, surface mount) | PG-TDSON-8-5 (TDSON-8 EP, 5x6 mm) |
| Pin Count | 3 (2 + tab) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Tape and Reel Packaging | Yes (ATMA1 suffix = T&R) | β |
| FET Type | β | N-Channel |
| Drain-to-Source Voltage (VDS) | β | 40 V |
| Gate-to-Source Voltage (VGS) | β | Β±20 V |
| Continuous Drain Current at 25C (ID, Ta) | β | 18 A |
| Continuous Drain Current at 25C (ID, Tc) | β | 85 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current IDM] |
| Power Dissipation at Ta (PD) | β | 2.5 W |
| Power Dissipation at Tc (PD) | β | 57 W |
| On-State Resistance (RDS(on)) | β | [DATA_NEEDED: RDS(on) max at VGS=10V] |
| On-State Resistance (RDS(on)) at VGS=4.5V | β | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typ/min/max] |
| Operating Temperature Range | β | -55C to +150C |
| Avalanche Energy Rated | β | Yes (single-pulse avalanche) |
| RoHS Status | β | Compliant |
| MSL Level | β | 1 |