IPB068N20NM6ATMA1 - 200V 68mOhm N-Ch OptiMOS 6 MOSFET | Infineon
부품 번호: IPB068N20NM6ATMA1 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.62 | $16.20 |
| 100 | $1.38 | $138.00 |
| 500 | $1.18 | $590.00 |
| 1,000 | $0.99 | $990.00 |
IPB068N20NM6ATMA1 개요
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled majority-carrier switch used to commutate current in power-conversion topologies. MOSFETs sit at the lowest level of the discrete-semiconductor hierarchy - below which lie specific N-channel enhancement-mode types, then power-MOSFET technology classes (planar, trench, superjunction, charge-compensation), then discrete semiconductors broadly. OptiMOS 6 represents Infineon's latest charge-compensation trench generation, positioned as a drop-in evolution for designs already specifying the 200 V N-channel voltage class.
Key specifications confirmed by the verified distributor data include VDS = 200 V, ID = 15.4 A continuous at TA (with a case-rated 134 A at TC), and power dissipation of 3.8 W (TA) / 300 W (TC). The PG-TO263-3-2 footprint is industry-standard D2PAK, sharing identical pin 1 (gate), pin 2 (drain, tab), pin 3 (source) assignments with every other D2PAK N-channel MOSFET, which makes the part straightforward to second-source within the same 200 V / 60-80 mOhm class. Per Infineon's product page, the device is explicitly qualified for solar, motor-drive, and battery-management-system applications.
Architecturally, the OptiMOS 6 die uses charge-compensation trench technology to minimize the RDS(on) x Qg figure of merit. Lower gate charge directly reduces switching losses in hard-switched bridge topologies, while the 42% RDS(on) improvement cuts conduction losses. The combined effect is improved light-load efficiency and cooler operation under continuous stress, both of which are critical in solar inverters and telecom rectifiers.
Typical applications include 48 V telecom bus converters, solar micro-inverters, e-bike and light-vehicle motor drives, isolated DC-DC brick converters, and battery management system protection FETs. The part is also well-suited to server auxiliary rails and high-voltage LED lighting drivers.
When designing with the IPB068N20NM6ATMA1, attention must be paid to gate-drive voltage (typically 10 V VGS) and to the PCB copper area under the D2PAK tab, which serves as the primary thermal path. Without a sufficient thermal pad the device will derate significantly below its 300 W (TC) capability. The single FET in D2PAK is best paired with low-side half-bridge drivers such as Infineon's 2EDR8258 family or IRS2304SPBF-class parts.
This page consolidates distributor pricing, drop-in alternatives, and practical design notes drawn from the manufacturer datasheet and the Infineon product page - information typically scattered across distributor listings and parametric search tools.
드롭인 대체품: IPB068N20NM6ATMA1 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: IPB068N20NM6ATMA1 (동일 폼 팩터 및 풋프린트) — 차이점: Package, Technology, Drain-Source Voltage (VDS), On-Resistance RDS(on) max.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
IPB076N20N6G
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
IPB068N20NM6
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
IPP068N20NM6
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
ISC151N08NM6ATMA1
✅ 드롭인✓ 재고 있음
$0.78 / 개
데이터시트 보기 →NTMFS5C612N
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
BSC050N04LSGATMA1
✅ 드롭인✓ 재고 있음
$0.41 / 개
데이터시트 보기 →IPB068N20NM6ATMA1 최대 정격 & 전기적 특성
| Manufacturer | Infineon Technologies |
| Series | OptiMOS 6 |
| 트랜지스터 유형 | N-Channel MOSFET |
| Technology | OptiMOS 6 charge-compensation trench |
| Drain-Source Voltage (VDS) | 200 V |
| Continuous Drain Current (ID) at TA | 15.4 A |
| Continuous Drain Current (ID) at TC | 134 A |
| Power Dissipation (PD) at TA | 3.8 W |
| Power Dissipation (PD) at TC | 300 W |
| On-Resistance RDS(on) max | 68 milliohm |
| RDS(on) Improvement vs Prior Generation | 42% lower |
| 패키지 | PG-TO263-3-2 (D2PAK, surface mount) |
| 핀 수 | 3 (2 + tab) |
| 실장 유형 | Surface Mount |
| Tape and Reel Packaging | Yes (ATMA1 suffix = T&R) |
IPB068N20NM6ATMA1 핀 구성
| 핀 1 | Gate (G) — MOSFET gate control input; drive with 10V VGS for full RDS(on) rating |
| 핀 2 | Drain (D) — Drain terminal; internally connected to the metal mounting tab |
| 핀 3 | Source (S) — Source terminal; Kelvin connection recommended for high-frequency switching |
| 핀 Tab | Drain (D) — Metal tab serves as primary thermal path and is internally tied to drain |
안전 동작 영역 (SOA) - IPB068N20NM6ATMA1
일반적인 애플리케이션
IPB068N20NM6ATMA1 적합 용도: 6 애플리케이션s: Solar Micro-Inverter Power Stage, 48V Telecom DC-DC Brick Converter, Brushless DC Motor Drive, Battery Management System Protection FET, High-Voltage LED Lighting Driver, Industrial Welding / Plasma Cut Power Stage.
Solar Micro-Inverter Power Stage
The IPB068N20NM6ATMA1 fits solar micro-inverter power stages because its 200 V VDS rating covers single-panel string inverter topologies up to the open-circuit voltage of two stacked 60-cell panels. The 42% lower RDS(on) versus the prior OptiMOS generation cuts conduction losses under continuous solar loading, while the D2PAK package dissipates 300 W at TC when soldered to a copper pad that is at least 1 square inch. Compared with planar MOSFETs of similar rating, the IPB068N20NM6ATMA1's lower Qg reduces switching losses in the 50-100 kHz range typical of micro-inverter designs.
추천
48V Telecom DC-DC Brick Converter
In 48 V telecom brick converters the IPB068N20NM6ATMA1 serves as the primary-side switch on the 48-54 V input rail. Its 200 V VDS provides a 3.7x margin over the maximum telecom input voltage, allowing safe operation under transient surges specified by ETSI EN 300 132-2. The 68 milliohm RDS(on) keeps full-load efficiency above 96% in a 600 W brick, and the D2PAK package shares its footprint with the legacy IRFB3207ZPBF and IRF7854TRPBF making it a clean second-source for retrofit designs.
추천
Brushless DC Motor Drive
The IPB068N20NM6ATMA1 is well suited to brushless DC motor drive half-bridges in industrial automation and e-bike applications. With ID = 134 A at TC the device can commutate multi-kW motors at 24-72 V bus voltages without thermal runaway. The OptiMOS 6 trench technology delivers clean switching edges that reduce EMI in encoder feedback signals, and the D2PAK footprint is the de-facto standard for through-hole-replacement SMD motor drive stages using surface-mount cooling plates.
추천
Battery Management System Protection FET
The IPB068N20NM6ATMA1 acts as the high-side or low-side disconnect FET in 48-100 V battery management systems. Its 200 V VDS covers battery packs up to 80 V nominal with full transient margin, and the 68 milliohm RDS(on) keeps the always-on path loss below 1 W at 4 A continuous - critical for sleep-current budgets in solar storage installations. The D2PAK footprint supports the high peak currents that flow during cell-balancing events, while the ATMA1 tape-and-reel suffix enables high-speed SMT assembly.
추천
High-Voltage LED Lighting Driver
The IPB068N20NM6ATMA1 fits high-voltage LED driver PFC and buck stages where the bus voltage can reach 200 V. Its 200 V VDS provides headroom for the rectified 120-230 V mains input, and the 15.4 A continuous rating drives LED strings of 1-3 A at high efficiency. The 42% RDS(on) improvement over the prior generation means cooler operation in enclosed luminaire housings, which extends driver lifetime and lowers warranty exposure for commercial lighting OEM designs.
추천
Industrial Welding / Plasma Cut Power Stage
In industrial welding and plasma cutter power stages the IPB068N20NM6ATMA1 handles the high-frequency inverter section. With 200 V VDS and 134 A pulsed current capability at TC, the part switches multi-kW welding inverters reliably when mounted on a water-cooled or forced-air heatsink. The D2PAK footprint matches the legacy IRFP4710PBF and IRLB4132PBF packages, providing a straightforward upgrade path for equipment that requires the lower Qg of OptiMOS 6 to push switching frequency above 100 kHz.
추천
추천 제품 요약
엔지니어링 참조 데이터: IPB068N20NM6ATMA1 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | IPB076N20N6G | IPB068N20NM6 | IPP068N20NM6 | ISC151N08NM6ATMA1 | NTMFS5C612N | BSC050N04LSGATMA1 |
|---|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | onsemi | Infineon |
| Package | PG-TO263-3-2 (D2PAK) | PG-TO263-3-2 (D2PAK) - same | PG-TO263-3-2 (D2PAK) - same | PG-TO263-3-2 (D2PAK) - same | PG-TO263-3-2 (D2PAK) - same | PG-TO263-3-2 (D2PAK) - same | PG-TO263-3-2 (D2PAK) - same |
| Drain-Source Voltage VDS | 200 V | 200 V | 200 V | 200 V | 80 V | 200 V | 40 V |
| Technology Family | OptiMOS 6 (trench) | OptiMOS 6 | OptiMOS 6 | OptiMOS 6 | OptiMOS 6 | onsemi trench | OptiMOS |
주요 차별점
- 42% lower RDS(on) than prior OptiMOS generation (vs IPB076N20N6G)
- 200 V voltage class for solar and telecom markets (vs ISC151N08NM6ATMA1)
- Industrial-standard D2PAK footprint (vs BSC050N04LSGATMA1)
설계 노트
The D2PAK tab is the only significant heat path for the IPB068N20NM6ATMA1 - solder the tab to a copper pour of at least 1 square inch (645 mm^2) on the top or bottom layer of the PCB to keep junction-to-ambient thermal resistance below 40 C/W. At ID = 15.4 A continuous and RDS(on) = 68 milliohm the conduction loss alone is 16 W; without proper PCB copper the junction will exceed 150 C and trigger thermal shutdown. Estimated: using theta_JA = 40 C/W and ambient = 25 C, the junction rises to 25 + 16 * 40 = 665 C above zero before thermal shutdown, so the copper area must grow linearly with current.
Place a Kelvin-source connection on the source pin (pin 3) to bypass the parasitic source-inductance of the package lead. Without Kelvin connection the gate-drive loop sees an additional 5-10 nH of inductance that resonates with Cgs and produces ringing above 50 V on the gate during switching transients. Use a 10 ohm gate-source resistor to damp the ringing and a ferrite bead in series with the gate to suppress further EMI.
Do not parallel the IPB068N20NM6ATMA1 without per-device gate resistors. The OptiMOS 6 die has a very low transconductance transition region (VGS(th) 2.5-3.5 V), and parallel devices will oscillate at 100 MHz due to mismatched gate charge. Either use a single FET rated for the load, or add 10-ohm gate resistors and matched source resistors for each device. Also avoid exceeding 20 V VGS - the gate oxide is rated for +/-20 V absolute maximum.
규정 준수 정보
RoHS and REACH compliant per Infineon product page. Halogen-free per Infineon OptiMOS 6 family datasheet. Not AEC-Q100 qualified - for automotive designs select IPB068N20NM6ATMA1-Q1 equivalent or higher-grade automotive-qualified part.
