IPG16N10S4L61AATMA1 - Dual 100V 16A Logic-Level MOSFET | Infineon
부품 번호: IPG16N10S4L61AATMA1 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $2.15 | $2.15 |
| 10 | $1.92 | $19.20 |
| 100 | $1.65 | $165.00 |
| 500 | $1.38 | $690.00 |
| 1,000 | $1.12 | $1,120.00 |
IPG16N10S4L61AATMA1 개요
A MOSFET array integrates two or more MOSFET dies in a single package, reducing PCB footprint and improving thermal coupling versus two discrete equivalents. The logic-level gate drive (VGS(th) typically below 2.5V) allows direct control from 3.3V or 5V microcontrollers without a dedicated gate driver stage. Within the broader hierarchy, MOSFET arrays belong to discrete semiconductors -> transistors -> MOSFETs -> power switches, serving as the lowest-level switching element in motor drives, solenoid drivers, and synchronous buck converter stages.
Key specifications include dual N-channel configuration, 100V drain-source breakdown voltage, 16A continuous drain current at 25C, 29W maximum power dissipation, and a logic-level gate threshold. The PG-TDSON-8-10 package with wettable flanks enables automated optical inspection (AOI) of solder joints, a critical requirement for automotive-grade PCB assembly lines. The MSL1 moisture sensitivity rating and 260C peak reflow compatibility simplify high-volume SMT manufacturing.
Architecturally, the IPG16N10S4L61AATMA1 uses Infineon's OptiMOS technology platform with trench-cell structure for low on-state resistance per unit silicon area. The dual-die configuration allows half-bridge, dual-side, or back-to-back topologies in a single 5mm x 6mm outline, saving roughly 50% board area compared to two discrete TDSON-8 MOSFETs. Avalanche ruggedness is verified at 100% of production units, supporting inductive load switching such as motors, relays, and solenoids.
Typical applications include automotive 12V/24V body electronics, brushless DC (BLDC) motor drivers, electronic power steering (EPS) auxiliary circuits, LED lighting drivers, and industrial solenoid/valve controllers. The AEC-Q101 qualification makes it particularly suitable for under-hood and chassis electronics where temperature and reliability demands exceed consumer-grade requirements.
When designing with this part, ensure the gate drive voltage fully enhances the MOSFET (VGS >= 4.5V for lowest Rds(on)). The wettable flank package requires standard reflow profiles; no special solder paste or stencil changes are needed beyond standard No-Clean SAC305 alloys.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the standalone manufacturer datasheet, helping engineers accelerate component selection.
드롭인 대체품: IPG16N10S4L61AATMA1 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: IPG16N10S4L61AATMA1 (동일 폼 팩터 및 풋프린트) — 차이점: Operating Temperature Range, Package, Technology, MSL Level, RoHS Status.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
IPG16N10S461AATMA1
✅ 드롭인✓ 재고 있음
$0.82 / 개
데이터시트 보기 →IPC100N04S5L1R5ATMA1
✅ 드롭인✓ 재고 있음
$1.18 / 개
데이터시트 보기 →IAUC120N04S6N010ATMA1
✅ 드롭인✓ 재고 있음
$0.68 / 개
데이터시트 보기 →CSD19538Q2
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
BSC019N04LSTATMA1
✅ 드롭인✓ 재고 있음
$1.21 / 개
데이터시트 보기 →IPG16N10S4L61AATMA1 최대 정격 & 전기적 특성
| FET Type | Dual N-Channel (Array) |
| Technology | Logic-Level, Enhancement Mode |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) at 25C | 16 A |
| Power Dissipation (PD) | 29 W |
| 패키지 / 케이스 | PG-TDSON-8-10 (Wettable Flank) |
| 실장 유형 | Surface Mount |
| 동작 온도 | -55C to +175C (TJ) |
| 습도 민감도 레벨 (MSL) | MSL1 (unlimited floor life at <30C / 85% RH) |
| Peak Reflow Temperature | 260 C |
| AEC-Q101 Qualification | Qualified (automotive grade) |
| RoHS Compliance | Compliant (Green Product) |
| Avalanche Tested | 100% (per datasheet) |
| AOI Compatible | Yes (Wettable Flank) |
| FET Feature | Logic Level Gate |
IPG16N10S4L61AATMA1 핀 구성
| 핀 1 | GATE1 — Gate of MOSFET 1 (logic-level drive) |
| 핀 2 | SOURCE1 — Source of MOSFET 1 |
| 핀 3 | DRAIN2 — Drain of MOSFET 2 |
| 핀 4 | SOURCE2 — Source of MOSFET 2 |
| 핀 5 | GATE2 — Gate of MOSFET 2 (logic-level drive) |
| 핀 6 | DRAIN1 — Drain of MOSFET 1 |
| 핀 7 | NC — Not connected (per datasheet) |
| 핀 8 | NC — Not connected (per datasheet) |
| 핀 9 | EP — Exposed pad (thermal, electrically to drain or floating per datasheet) |
| 핀 10 | EP — Exposed pad (thermal, electrically to drain or floating per datasheet) |
안전 동작 영역 (DC, single pulse)
일반적인 애플리케이션
IPG16N10S4L61AATMA1 적합 용도: 7 애플리케이션s: Automotive 12V/24V Body Electronics Load Switching, BLDC Motor Driver Half-Bridge Stage, Industrial Solenoid and Valve Drivers, Synchronous Buck Converter Low-Side Switch, LED Lighting Driver Switching, Battery Management Protection Switch, USB-PD and Power Path Switching.
Automotive 12V/24V Body Electronics Load Switching
The IPG16N10S4L61AATMA1's 100V VDS rating and 16A continuous drain current make it ideal for automotive body electronic modules such as headlamp drivers, seat heaters, mirror actuators, and door lock solenoids. Its AEC-Q101 qualification ensures compliance with automotive reliability stress tests, while the logic-level gate allows direct 3.3V or 5V drive from body control MCUs without external gate drivers. The dual-array configuration in PG-TDSON-8-10 saves roughly 50% PCB area versus two discrete TDSON-8 parts, critical for space-constrained ECUs.
추천
BLDC Motor Driver Half-Bridge Stage
The IPG16N10S4L61AATMA1 dual N-channel configuration supports half-bridge or 3-phase inverter topologies for small BLDC motors used in automotive auxiliary pumps, HVAC blowers, and seat adjusters. Each die handles 16A continuous current at 25C, supporting sub-100W motor loads on a 24V bus. Its 100V VDS rating provides ample margin for back-EMF spikes and 48V mild-hybrid bus transients. Logic-level gate input enables direct PWM drive from motor controller MCUs up to 25 kHz without gate driver ICs.
추천
Industrial Solenoid and Valve Drivers
The IPG16N10S4L61AATMA1 suits industrial 24V solenoid and proportional valve switching, where 16A continuous drain current and 100% avalanche ruggedness handle the inductive kickback of de-energizing coils. Its 175C maximum junction temperature supports installation in enclosed control cabinets with elevated ambient. The wettable-flank PG-TDSON-8-10 package enables AOI verification on automated production lines, while MSL1 rating avoids special moisture-bag handling during high-volume SMT assembly.
추천
Synchronous Buck Converter Low-Side Switch
As a low-side synchronous switch in a 24V-to-3.3V/5V buck converter, the IPG16N10S4L61AATMA1's dual-die configuration allows dual-phase paralleling for higher current and improved thermal spreading. Its logic-level gate enables direct drive from 5V PWM controller outputs, eliminating a gate drive stage. With 100V VDS rating and 16A continuous current, it handles point-of-load converters up to 80W per phase in industrial automation and telecom equipment.
추천
LED Lighting Driver Switching
The IPG16N10S4L61AATMA1 powers automotive and architectural LED lighting drivers where its dual N-channel array enables buck or boost topology switching. Its 16A continuous drain current supports high-brightness LED strings up to several hundred watts, while 100V VDS handles 48V input bus designs for commercial lighting. The logic-level gate allows direct PWM dimming from a 3.3V microcontroller, and 100% avalanche rating protects against LED string open-circuit transients during dimming transients.
추천
Battery Management Protection Switch
The IPG16N10S4L61AATMA1 dual array implements back-to-back blocking switches in 12V/24V battery management systems for e-bikes, e-scooters, and portable industrial equipment. Its logic-level gate enables direct drive from battery management MCUs, while 100V VDS handles inductive transients from DC motor loads. The 16A continuous current supports pack-level charge and discharge switching up to several hundred watts, and AEC-Q101 qualification suits automotive e-mobility applications.
추천
USB-PD and Power Path Switching
The IPG16N10S4L61AATMA1 dual-die array handles power-path switching in USB-PD and Type-C source applications, where its 16A continuous current supports 100W (20V/5A) power delivery. Its 100V VDS easily exceeds USB-PD 20V maximum bus, providing safety margin for ESD and surge events. Logic-level gate enables direct load-switch control from USB-PD controller ICs, and the wettable-flank package meets automotive-grade USB charger PCB assembly requirements.
추천
추천 제품 요약
엔지니어링 참조 데이터: IPG16N10S4L61AATMA1 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | IPG16N10S461AATMA1 | IPC100N04S5L1R5ATMA1 | CSD19538Q2 |
|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Texas Instruments |
| Package | PG-TDSON-8-10 (Wettable Flank) | PG-TDSON-8-10 (Wettable Flank) - same | PG-TDSON-8 - same | WSON-8 (TDSON-8 equiv) |
| FET Configuration | Dual N-Channel | Dual N-Channel | Single N-Channel | Single N-Channel |
| Drain-Source Voltage (VDS) | 100 V | 100 V | 40 V (-60%) | 100 V |
| Continuous Drain Current (ID @ 25C) | 16 A | 16 A | 100 A (single die) | 50 A (single die) |
| Gate Threshold Type | Logic Level (L) | Standard (no L) | Logic Level (L) | Logic Level |
| Wettable Flank / AOI | Yes | Yes | Yes | No (standard WSON) |
| Max Junction Temperature | 175 C | 175 C | 175 C | 150 C |
주요 차별점
- Dual N-channel in single 5x6mm package (vs Two discrete Infineon BSZ0901NS (single TDSON-8))
- Logic-level gate direct 3.3V MCU drive (vs IPG16N10S461AATMA1 (standard gate))
- AEC-Q101 automotive qualification at 175C Tj (vs TI CSD19538Q2 (commercial grade, 150C Tj))
- Wettable flank with 100% AOI compatibility (vs TI CSD19538Q2 (no wettable flank))
설계 노트
Estimated: with VDS=24V, ID=10A per die, the IPG16N10S4L61AATMA1 dissipates approximately 24W per die (Rds(on) ~ 10 mOhm estimated at VGS=4.5V). On a 1 sq-inch copper pour per side, theta_JA of approximately 50 C/W raises junction temperature by 120C above 25C ambient. For continuous full-load operation above 10A per die, a thermal via array to an internal copper plane is recommended to keep Tj below 150C.
Place the IPG16N10S4L61AATMA1 source pins directly at the load-return node to minimize parasitic inductance in the high-current loop. Use a top-side copper pour on both drain and source pads with thermal vias to inner copper layers; for dual-die operation, isolate the two source pads with a small thermal relief to prevent copper balancing. Place the gate drive resistor (typically 10-100 ohm) within 5mm of the gate pin to suppress parasitic oscillation.
Keep the high-current switching loop (drain-source of each die) area as small as possible by placing input bulk capacitors close to the drain pads. For half-bridge or synchronous buck layouts using both dies, the high-side and low-side switch loops must be tightly coupled through shared decoupling capacitance. The wettable-flank side-fillet requires standard SAC305 reflow profiles - no special paste or stencil apertures are needed beyond standard 1:1 land pattern.
Do not operate the IPG16N10S4L61AATMA1 with VGS below 4.5V at high drain currents - Rds(on) rises sharply and the die can exceed thermal limits. For battery-powered applications where the supply rail may dip below 4.5V during cold-crank (12V automotive cold-crank can drop to 6V), add a charge pump or bootstrap gate driver. The dual-die package does NOT provide internal thermal coupling between MOSFETs - each die must be thermally managed independently.
Add a small RC snubber (typically 10 ohm + 1 nF) across each drain-source to dampen ringing during switching transients, especially when driving inductive loads such as motors or solenoids. Keep snubber leads short (<5mm) to maintain effectiveness. For PWM dimming of LED strings, use gate drive resistors of 47 ohm or higher to slow edge rates below 50 V/ns and reduce conducted EMI.
규정 준수 정보
AEC-Q101 (automotive discrete) qualified per Infineon datasheet. Green Product (RoHS compliant). MSL1 unlimited floor life. 260C peak reflow compatible. 100% avalanche tested per datasheet.
