IPL60R065C7AUMA1 - 600V CoolMOS C7 65mΩ N-Ch MOSFET | Infineon
부품 번호: IPL60R065C7AUMA1 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $4.85 | $4.85 |
| 10 | $4.32 | $43.20 |
| 100 | $3.78 | $378.00 |
| 500 | $3.31 | $1,655.00 |
| 1,000 | $2.95 | $2,950.00 |
IPL60R065C7AUMA1 개요
A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is the primary active switching element in modern switched-mode power supplies (SMPS), used to chop a DC input into a high-frequency AC waveform that is then transformed, rectified, and filtered. The IPL60R065C7AUMA1 belongs to the high-voltage MOSFET hierarchy: MOSFET → power MOSFET → superjunction MOSFET → CoolMOS family → 600V class. The superjunction architecture replaces the conventional planar drift region with alternating P/N columns, dramatically reducing on-state resistance per unit area and gate charge for a given breakdown voltage.
Key features include 65 mΩ typical R_DS(on) at V_GS = 10 V, an integrated gate-source Zener clamp for ESD protection, and a source-down package construction that maximizes PCB copper utilisation for cooling. The device also delivers very low switching losses (E_OSS typically < 4 µJ) and supports dv/dt robustness typical of the CoolMOS C7 family, simplifying EMI filter design in hard-switched PFC and LLC topologies.
Architecturally, the CoolMOS C7 generation refines the C3/C6 platforms with reduced gate charge (Q_G typ. ~70 nC) and improved body-diode reverse-recovery softness, enabling higher switching frequencies (>100 kHz in PFC) without sacrificing efficiency. The source-down PG-VSON-4-1 footprint removes the traditional drain-tab, allowing the drain current path to flow directly into top-side copper rather than through a thermal via array.
Typical applications include server and telecom 80 PLUS Titanium-grade switched-mode power supplies, industrial welding and induction heating converters, solar inverters, on-board EV chargers, and high-frequency telecom rectifier modules. Its low Q_G × R_DS(on) figure of merit also suits synchronous rectification on the secondary side of high-power AC/DC converters.
When designing with this MOSFET, place multiple thermal vias directly under the source-down pad to channel heat into inner copper planes, and keep the gate-drive loop area minimal (gate resistor + driver return path < 5 mm²) to suppress ringing at turn-on. Verify creepage and clearance for the 600V rating against pollution degree requirements in your end equipment.
This page synthesizes distributor pricing, drop-in CoolMOS alternatives in the same PG-VSON-4-1 footprint, and PCB layout notes that complement the manufacturer datasheet.
드롭인 대체품: IPL60R065C7AUMA1 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: IPL60R065C7AUMA1 (동일 폼 팩터 및 풋프린트) — 차이점: Operating Temperature Range, Package, Technology, Series, Mounting Type.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
IPL60R075C7AUMA1
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
IPL60R105P7AUMA1
✅ 드롭인✓ 재고 있음
$0.82 / 개
데이터시트 보기 →IPB60R040CFD7ATMA1
✅ 드롭인✓ 재고 있음
$5.19 / 개
데이터시트 보기 →IPB60R280P7ATMA1
✅ 드롭인✓ 재고 있음
$0.88 / 개
데이터시트 보기 →IPW60R037P7XKSA1
✅ 드롭인✓ 재고 있음
$3.55 / 개
데이터시트 보기 →IPB60R055CFD7ATMA1
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
IPL60R065C7AUMA1 최대 정격 & 전기적 특성
| Manufacturer | Infineon Technologies |
| Series | CoolMOS C7 |
| Part Status | Active |
| FET Type | N-Channel |
| Process Technology | CoolMOS C7 (Superjunction) |
| Maximum Drain-Source Voltage (V_DS) | 600 V |
| Continuous Drain Current (I_D, T_C=25°C) | 29 A |
| On-Resistance (R_DS(on), typ., V_GS=10V) | 65 mΩ |
| Maximum Power Dissipation (P_D, T_C=25°C) | 180 W |
| Gate-Source Voltage (V_GS, max) | ±20 V |
| Gate-Source Threshold (V_GS(th), typ.) | 3.5 V |
| 패키지 / 케이스 | PG-VSON-4-1 (Source-Down) |
| 실장 유형 | Surface Mount |
| 동작 온도 범위 | -55 °C to +150 °C (T_J) |
| RoHS 상태 | Compliant with Exemption |
| Automotive Qualified (AEC-Q101) | No |
IPL60R065C7AUMA1 핀 구성
| 핀 1 | Source (S) — Source terminal (low-side power path) |
| 핀 2 | Source (S) — Source terminal (low-side power path, paralleled with pin 1) |
| 핀 3 | Gate (G) — Gate drive input, ESD-protected via Zener clamp |
| 핀 4 | Drain (D) — Drain terminal on bottom exposed pad (high-voltage switching node) |
안전 동작 영역 (DC, T_C=25°C)
일반적인 애플리케이션
IPL60R065C7AUMA1 적합 용도: 6 애플리케이션s: Server & Telecom SMPS (PFC + LLC), Solar String Inverters, On-Board EV Charger (OBC), Industrial Welding & Induction Heating, Telecom Rectifier Modules (48 V), HID & Stage Lighting Ballasts.
Server & Telecom SMPS (PFC + LLC)
The IPL60R065C7AUMA1 fits server and telecom switched-mode power supplies targeting 80 PLUS Titanium efficiency. Its 65 mΩ R_DS(on) and 600 V V_DS handle universal AC input (90–264 V) PFC front ends delivering 380–400 V DC bus, while low Q_G and E_OSS keep switching losses low in 100 kHz+ LLC converters. CoolMOS C7's low Q_RR also simplifies synchronous rectification on the secondary side. Designers can pair it with Infineon EiceLBRIDGE gate drivers and XDPE digital controllers for full-titanium 1U/2U server PSU designs.
추천
Solar String Inverters
In residential and small-commercial solar string inverters, the IPL60R065C7AUMA1 serves as the boost-PFC switch or full-bridge inverter switch on the DC-AC stage. The 600 V rating accommodates the 380–400 V intermediate bus, and the 65 mΩ R_DS(on) minimises conduction losses at high DC currents typical of 3–10 kW single-phase inverters. The PG-VSON-4-1 source-down footprint enables top-side copper cooling critical for sealed IP65 inverter enclosures. Pairing with a CoolMOS C7 fast-body-diode variant or SiC diode improves dead-time behaviour and overall CEC-weighted efficiency.
추천
On-Board EV Charger (OBC)
The IPL60R065C7AUMA1 suits 3.3–11 kW on-board EV chargers operating from single-phase or three-phase mains. Its 600 V V_DS tolerates rectified 380 V three-phase bus, and the 65 mΩ R_DS(on) keeps PFC conduction losses low across the wide load range required by OBC charge profiles. CoolMOS C7's avalanche ruggedness supports repetitive clamping during load-dump transients. Engineers typically combine this MOSFET with ISO 26262-qualified gate drivers (1ED020I12B2XUMA1) and a DSP/MCU implementing digital charge control for ISO 15118 readiness.
추천
Industrial Welding & Induction Heating
The IPL60R065C7AUMA1 is well-suited for industrial welding and induction-heating converters that demand high-frequency, high-current switching from a 600 V DC link. CoolMOS C7's low E_OSS reduces switching losses at 100–200 kHz, while its 180 W power dissipation rating supports continuous industrial-duty operation with adequate heatsinking. The source-down PG-VSON-4-1 package allows direct mounting to a water-cooled or fan-cooled cold plate via top-side copper. Designers should size gate-drive peak currents per Infineon's C7 application notes to keep dv/dt below EMI limits.
추천
Telecom Rectifier Modules (48 V)
In -48 V telecom rectifier modules, the IPL60R065C7AUMA1 often serves in bridgeless totem-pole PFC front ends achieving 96–98 % efficiency at 50 % load (80 PLUS Titanium-equivalent curve). CoolMOS C7's fast body diode and low Q_RR minimise dead-time losses, while the 600 V rating tolerates wide mains variations and transient spikes on telecom DC plants. The PG-VSON-4-1 footprint supports high power density (>30 W/in³) designs used in next-gen compact rectifiers.
추천
HID & Stage Lighting Ballasts
The IPL60R065C7AUMA1 is used in electronic ballasts for high-intensity-discharge (HID) lamps and stage-lighting dimmers where 600 V blocking and fast switching enable compact, dimmable designs. CoolMOS C7's low gate charge simplifies dimming-PWM control, and the source-down package keeps the thermal path short in enclosed fixture housings. Designers typically pair the MOSFET with an MCU dimming controller and PFC controller to meet EN 61000-3-2 harmonic standards.
추천
추천 제품 요약
엔지니어링 참조 데이터: IPL60R065C7AUMA1 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | IPL60R075C7AUMA1 | IPL60R105P7AUMA1 | IPB60R040CFD7ATMA1 | IPB60R280P7ATMA1 | IPW60R037P7XKSA1 | IPB60R055CFD7ATMA1 |
|---|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-VSON-4-1 | PG-VSON-4-1 (same) | PG-VSON-4-1 (same) | PG-VSON-4-1 (same) | PG-VSON-4-1 (same) | PG-VSON-4-1 (same) | PG-VSON-4-1 (same) |
| Technology | CoolMOS C7 | CoolMOS C7 | CoolMOS P7 | CoolMOS CFD7 | CoolMOS P7 | CoolMOS P7 | CoolMOS CFD7 |
| V_DS max (V) | 600 | 600 | 600 | 600 | 600 | 600 | 600 |
| R_DS(on) typ. (mΩ) @ V_GS=10V | 65 | 75 | 105 | 40 | 280 | 37 | 55 |
| Body Diode | Standard (C7) | Standard (C7) | Standard (P7) | Fast-body-diode (CFD7) | Standard (P7) | Standard (P7) | Fast-body-diode (CFD7) |
주요 차별점
- CoolMOS C7 superjunction with 65 mΩ R_DS(on) in source-down PG-VSON-4-1 (vs IPL60R105P7AUMA1 (P7 generation, 105 mΩ))
- Source-down package enables top-side copper cooling (vs IPB60R040CFD7ATMA1 (similar package, fast-body-diode))
- Industry-standard 600 V V_DS rating for universal-input PFC (vs IPB60R280P7ATMA1 (280 mΩ, higher resistance))
- Wide distributor availability at sub-$5 qty-1 pricing (vs IPW60R037P7XKSA1 (P7 with 37 mΩ))
설계 노트
Estimated: at I_D = 10 A continuous and T_C = 100 °C with the PG-VSON-4-1 source-down package, the IPL60R065C7AUMA1 dissipates roughly 6.5 W into the top-side copper pad. Provide at least 600 mm² of 2 oz top copper and thermal vias on inner layers to keep θ_JA below 50 °C/W; without thermal copper the package can exceed 150 °C junction at high duty cycles.
PG-VSON-4-1 is a source-down package: pins 1–2 carry the source return, pin 3 is the gate, and the bottom exposed pad is the drain. Place the gate-loop return (gate resistor → source pad) within 5 mm² to suppress turn-on ringing; use a Kelvin-source connection on a dedicated source pin if switching >300 kHz. The source-down topology lets you connect the high-current return directly to a top-side copper pour without thermal vias under the drain tab.
Keep creepage ≥ 6 mm and clearance ≥ 4 mm between the drain node and any low-voltage signal traces to satisfy pollution-degree-3, IEC 60950 / IEC 62368-1 requirements at 600 V. Place the Y-cap from PFC output to protective-earth close to the MOSFET drain to limit common-mode EMI from the high dv/dt node.
Do not exceed V_GS = ±20 V; the integrated gate-source Zener protects against ESD but not against sustained over-voltage from a misconfigured gate driver. Always include a 10 kΩ gate pull-down resistor to keep the MOSFET off during controller start-up. For hard-switched PFC bridges, verify reverse-recovery behaviour of the CoolMOS body diode or pair with a SiC anti-parallel diode for the lowest switching loss.
규정 준수 정보
RoHS compliant with exemption per Arrow product page; SVHC above threshold disclosed (Reach). Not AEC-Q100/AEC-Q101 qualified - choose IPD-series qualified variants for automotive. Halogen-free status not explicitly stated in web data and marked unknown.
