IPN70R360P7SATMA1 vs IPN70R600P7SATMA1 비교
다음의 상세 나란히 비교: IPN70R360P7SATMA1 제조: Infineon 및 IPN70R600P7SATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IPN70R360P7SATMA1 | IPN70R600P7SATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.58 | $0.49 |
| Drain-Source Voltage (Vdss) | 700 V | 700 V |
| Drain Current Continuous (Id, Tc=25°C) | 12.5 A | — |
| On-State Resistance Rds(on) max (Vgs=10V) | 360 mΩ | — |
| Power Dissipation (Pd, Tc=25°C) | 7.2 W | — |
| Gate-Source Voltage (Vgs) max | [DATA_NEEDED: Vgs max rating] | — |
| Gate Threshold Voltage (Vth) typ | 3.0 V | — |
| Technology | CoolMOS P7 Superjunction (SJ) | Superjunction (CoolMOS) N-Channel MOSFET |
| Channel Type | N-Channel | — |
| 패키지 | PG-SOT223 (3-pin, 2+Tab) | PG-SOT223 (3-pin + tab), surface mount |
| 실장 유형 | Surface Mount | Surface Mount |
| 동작 온도 범위 | -55°C to +150°C (junction) | -55°C to +150°C (Tj) |
| Storage Temperature Range | -55°C to +150°C | — |
| ESD Protection (HBM) | Class 1C | — |
| Drain Tab Connection | Pin 3 (Tab) | — |
| RoHS / REACH | Compliant (per Infineon product page) | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | CoolMOS P7 |
| Polarity / Channel Type | — | N-Channel |
| Continuous Drain Current (Id) @ Tc | — | 8.5 A |
| On-State Resistance Rds(on) max @ Vgs=10V | — | 600 mΩ |
| Power Dissipation (Pd) @ Tc | — | 6.9 W |
| Gate Threshold Voltage Vgs(th) typ | — | [DATA_NEEDED: Vgs(th) typical value] |
| Gate Charge Qg typ | — | [DATA_NEEDED: Qg typical value] |
| Pin Configuration | — | Pin 1 Gate, Pin 2 Drain, Pin 3 Source, Tab Drain |
| RoHS Compliance | — | Compliant |
| MSL 레벨 | — | Level 1 (per JEDEC J-STD-020) |
| Family Position | — | 700V CoolMOS P7, 600mΩ class |