IRF1310NSTRLPBF - 100V 42A N-Channel MOSFET | Infineon D2PAK
부품 번호: IRF1310NSTRLPBF ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.62 | $16.20 |
| 100 | $1.34 | $134.00 |
| 500 | $1.1 | $550.00 |
| 1,000 | $0.95 | $950.00 |
| 3,000 | $0.84 | $2,520.00 |
IRF1310NSTRLPBF 개요
An N-channel power MOSFET is a voltage-controlled semiconductor switch in which a positive gate-to-source voltage creates a conductive channel between drain and source. N-channel MOSFETs are preferred over P-channel variants for high-current switching because electrons have higher mobility than holes, yielding lower RDS(on) per unit silicon area. Power MOSFETs sit within the discrete semiconductor hierarchy: MOSFET -> transistor -> discrete semiconductor -> semiconductor, and are the workhorse switching element in switch-mode power supplies (SMPS), motor drives, and DC-DC converters operating from a few amps to hundreds of amps.
Key features include 100 V drain-source breakdown voltage, 42 A continuous drain current at TC, an exceptionally low 36 mOhm maximum RDS(on) at VGS = 10 V, and avalanche-rated ruggedness typical of the IRF1310N generation. The D2PAK surface-mount package provides a thermal resistance of around 40 C/W junction-to-case, enabling dissipation up to 160 W when mounted on a properly designed PCB copper area. The device is fully lead-free and RoHS compliant.
The IRF1310N utilizes Infineon's HEXFET power MOSFET process with a vertical DMOS structure, where current flows vertically through the die from the top drain contact (bonded to the D2PAK tab) to the source bond wires on top. This architecture delivers the high current density and low RDS(on) needed for synchronous rectification and high-side switch positions. The 73.3 nC gate charge enables moderate switching frequencies in the 100-500 kHz range without excessive gate-drive losses.
Typical applications include secondary-side synchronous rectification in 48 V telecom converters, high-current DC motor drives, uninterruptible power supply (UPS) battery switches, automotive 12 V/24 V load controllers, and Class-D audio amplifier output stages. The 100 V rating provides ample margin above 48 V telecom rails and 24 V industrial buses.
When designing with this MOSFET, pay particular attention to gate-drive voltage: full enhancement (lowest RDS(on)) requires VGS of 10 V, while logic-level thresholds around 4.5 V are not supported. Use a dedicated gate-driver IC rather than a microcontroller GPIO to achieve fast switching transitions and minimize switching losses.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
드롭인 대체품: IRF1310NSTRLPBF — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: IRF1310NSTRLPBF (동일 폼 팩터 및 풋프린트) — 차이점: Technology, Package, Operating Temperature Range, Total Gate Charge (Qg), Lead-Free.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
IRFR1310PBF
✅ 드롭인 ⚠️ 사양 미검증📋 참조 대체품 (카탈로그에 없음)
IRF1310NPBF
✅ 드롭인✓ 재고 있음
$0.98 / 개
데이터시트 보기 →IRFB4110PBF
✅ 드롭인✓ 재고 있음
$1.55 / 개
데이터시트 보기 →IRFB4310PBF
✅ 드롭인✓ 재고 있음
$1.95 / 개
데이터시트 보기 →IRFB4710PBF
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
STB120NF10T4
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
AUIRF1324S-7P
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
IRF1310NSTRLPBF 최대 정격 & 전기적 특성
| 트랜지스터 유형 | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) at TC=25C | 42 A |
| On-Resistance RDS(on) max at VGS=10V | 36 mOhm |
| Total Gate Charge (Qg) | 73.3 nC |
| Power Dissipation (PD) at TC=25C | 160 W |
| Power Dissipation (PD) at TA=25C | 3.8 W |
| 동작 온도 범위 | -55C to +175C |
| 패키지 | D2PAK (TO-263AB) |
| 실장 유형 | Surface Mount |
| Technology | IR MOSFET (HEXFET) |
| Built-in Diode | Yes (intrinsic body diode) |
| Lead-Free / RoHS | Yes (PBF suffix) |
| Configuration | Single with built-in diode |
IRF1310NSTRLPBF 핀 구성
| 핀 1 | Gate — Gate drive input (10V VGS required for full enhancement) |
| 핀 2 | Drain — Drain connection, internally bonded to metal tab |
| 핀 3 | Source — Source connection |
| 핀 Tab | Drain — Drain terminal (electrically connected to pin 2; also serves as thermal pad) |
안전 동작 영역 (TC = 25C)
일반적인 애플리케이션
IRF1310NSTRLPBF 적합 용도: 6 애플리케이션s: Secondary-Side Synchronous Rectification, DC Motor Drive (H-Bridge), Uninterruptible Power Supply (UPS) Battery Switch, Automotive 12 V/24 V Load Switch, Class-D Audio Amplifier Output Stage, Solar Charge Controller MPPT Switch.
Secondary-Side Synchronous Rectification
The IRF1310NSTRLPBF's 36 mOhm RDS(on) and 100 V VDS rating make it an effective synchronous rectifier on the secondary side of 48 V telecom and industrial bus converters. In a typical forward or bridge converter topology, the MOSFET replaces the rectifier diode on the low-side, reducing conduction loss from approximately 1 W (Schottky diode at 30 A) to under 0.5 W at 50 C case temperature. The 73.3 nC Qg is acceptable for switching frequencies up to 200 kHz; above that, gate-drive losses become significant. Source-connected heat-sinking via the D2PAK tab provides thermal dissipation without an external heatsink at moderate currents.
추천
DC Motor Drive (H-Bridge)
In a 24 V brushed DC motor H-bridge, the IRF1310NSTRLPBF serves as the four switching elements, handling continuous motor currents up to 42 A at TC = 25 C. Its 100 V VDS rating provides 4x headroom above the 24 V supply, comfortably absorbing inductive flyback transients from motor winding inductance. The 36 mOhm RDS(on) limits conduction loss to roughly 16 W at 20 A continuous, which the D2PAK tab can dissipate with a 2-3 square-inch copper pour. A gate-driver IC such as the IRS2104STRPBF is recommended for fast switching transitions and shoot-through protection. PWM frequencies up to 25 kHz are practical before gate-drive losses dominate.
추천
Uninterruptible Power Supply (UPS) Battery Switch
The IRF1310NSTRLPBF is well-suited as the low-side disconnect switch between a 48 V battery stack and the inverter section of a UPS. Its 42 A continuous rating handles inverter peak loads, while the 100 V VDS covers transient over-voltage during battery equalization or load-step events. The built-in body diode provides natural freewheeling during switch turn-off, eliminating the need for an external anti-parallel diode. Low RDS(on) of 36 mOhm minimizes voltage drop during normal operation, preserving battery runtime. The D2PAK package allows automated SMT assembly and provides adequate thermal performance when mounted on sufficient copper area.
추천
Automotive 12 V/24 V Load Switch
In automotive load-dump and transient environments, the IRF1310NSTRLPBF's 100 V VDS rating protects against inductive kick from solenoids, motors, and relay coils commonly found in body control modules. Its 42 A continuous current handles high-power loads such as fuel pumps, cooling fans, and seat heaters. While the standard IRF1310NSTRLPBF is not AEC-Q100 qualified, the IRF1310NSTRLPBF can serve as a cost-effective option for under-hood applications operating below 60 V. The 36 mOhm RDS(on) keeps conduction loss manageable in always-on circuits, and the D2PAK package withstands automotive thermal-cycling profiles when properly soldered to a thermal via array.
추천
Class-D Audio Amplifier Output Stage
The IRF1310NSTRLPBF can be used as the output switch in a Class-D audio amplifier half-bridge operating from a +/-35 V split rail. Its 100 V VDS handles the full rail-to-rail switching transient, while the 36 mOhm RDS(on) reduces conduction loss and improves amplifier efficiency to over 90% at full power. The 73.3 nC Qg is acceptable for audio-band switching frequencies of 250-500 kHz, where dead-time control via gate driver selection minimizes crossover distortion. For higher-power amplifiers (>500 W), consider paralleling two IRF1310NSTRLPBF devices per switch position to halve effective RDS(on) and share thermal load.
추천
Solar Charge Controller MPPT Switch
In a Maximum Power Point Tracking (MPPT) solar charge controller, the IRF1310NSTRLPBF serves as the main switching element in a buck or buck-boost topology handling PV panel voltages up to 60 V (24V nominal panel strings). The 100 V VDS rating comfortably exceeds MPPT input transients during partial shading events. Its 42 A continuous current supports PV panel short-circuit currents up to 30 A with margin. The 36 mOhm RDS(on) yields >97% efficiency at typical 20 A operating current, while the D2PAK package simplifies thermal management when mounted to the controller's chassis or heatsink. Pair with a UCC28951 controller for peak MPPT performance.
추천
추천 제품 요약
엔지니어링 참조 데이터: IRF1310NSTRLPBF — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | IRFR1310PBF | IRF1310NPBF | IRFB4110PBF | STB120NF10T4 | AUIRF1324S-7P |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | STMicroelectronics | Infineon |
| Package | D2PAK (TO-263AB) | DPAK (TO-252) | TO-220 | TO-220 | D2PAK (TO-263) | D2PAK (TO-263) |
| Drain-Source Voltage (VDS) | 100 V | 100 V | 100 V | 100 V | 100 V | 40 V |
| Mounting Type | Surface Mount | Surface Mount | Through Hole | Through Hole | Surface Mount | Surface Mount |
| Built-in Body Diode | Yes | Yes | Yes | Yes | Yes | Yes |
주요 차별점
- Lower RDS(on) than predecessors at same VDS class (vs IRF540NSTRLPBF)
- Higher current than surface-mount DPAK alternatives (vs IRFR1310PBF (DPAK))
- Lower RDS(on) than cross-brand ST alternative at lower cost-tier (vs STB120NF10T4)
- 100V VDS for 48V telecom/industrial margin (vs AUIRF1324S-7P (40V))
설계 노트
Estimated: at ID=20A and RDS(on)=36mOhm, conduction loss is roughly 14.4W. With the D2PAK junction-to-ambient thermal resistance of approximately 62 C/W on a 1 square-inch copper pour (JEDEC EIA/JESD51 standard board), the junction temperature rise is around 14.4W x 62 C/W = 893 C/W above ambient - clearly exceeding the 175C junction limit. Therefore, at 20A the IRF1310NSTRLPBF requires at least 3-4 square inches of copper pour, an external heatsink, or forced-air cooling to stay within thermal limits. Input values: ID=20A, RDS(on)=0.036 ohm, theta_JA=62 C/W, TA=25C. Always compute junction temperature using TJ = TA + (PD x theta_JA) before deploying.
The D2PAK tab is electrically connected to the drain (pin 2). When using the IRF1310NSTRLPBF on a heatsink, an insulating thermal interface material (TIM) such as a Bergquist Sil-Pad or 3M thermal tape is required to isolate the drain from the heatsink. Otherwise, the heatsink must be at drain potential, which complicates mechanical design and creates a potential safety hazard. Place the gate-drive traces away from the drain tab to minimize parasitic coupling, and keep the gate-source loop as small as possible to suppress ringing. A gate-source resistor of 10-100 kOhm is recommended to prevent accidental turn-on from dV/dt-induced Miller current.
Do not drive the IRF1310NSTRLPBF gate directly from a 3.3V or 5V microcontroller GPIO: the gate threshold voltage (VGS(th)) is typically 2-4V, but full enhancement to the datasheet 36 mOhm RDS(on) requires VGS = 10V. At VGS = 5V the on-resistance can be 2-5x higher, causing excessive heat and possible thermal runaway. Always use a dedicated gate-driver IC (e.g., TC4420, IRS2003, IRS2104) capable of sourcing/sinking 1-2A peak gate current for fast switching transitions. Additionally, do not exceed the maximum VGS rating of +/-20V; use a 12V Zener gate protection clamp if the gate-driver supply is unregulated.
For switching-frequency selection, the IRF1310NSTRLPBF's 73.3 nC Qg means gate-drive loss per cycle is Qg x Vdrive = 73.3 nC x 10V = 0.733 uJ. At 100 kHz, this becomes 73 mW per FET - negligible compared to conduction loss at high current. However, at 500 kHz gate-drive loss rises to 366 mW, and switching loss (proportional to frequency) becomes the dominant loss component. Choose switching frequency such that total losses (conduction + switching + gate-drive) are minimized, typically 50-200 kHz for this device in a 100W-class converter.
규정 준수 정보
RoHS and REACH compliant per PBF suffix. Standard part is not AEC-Q100 qualified; for automotive applications requiring AEC-Q100, contact Infineon about automotive-graded variants in the IRF1310N family.
