IRF4905PBF vs IRF4905SPBF 비교
다음의 상세 나란히 비교: IRF4905PBF 제조: Infineon 및 IRF4905SPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IRF4905PBF | IRF4905SPBF |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.95 | $1.18 |
| FET Type | P-Channel | — |
| Technology | HEXFET (IR MOSFET) | HEXFET, planar cell |
| Drain-Source Voltage (VDS) | -55 V | -55 V |
| Continuous Drain Current (ID) at TC | -74 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (PD) at TC | 200 W | — |
| On-Resistance RDS(on) max at VGS=-10V | 20 mΩ | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | [DATA_NEEDED: VGS max, typical +/-20V] |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/range] | -2.0 V to -4.0 V |
| Total Gate Charge (Qg) | 120 nC | 120 nC (typical per Mouser listing) |
| 동작 온도 범위 | -55 °C to +175 °C (junction) | — |
| 패키지 | TO-220AB (through-hole) | D2PAK (TO-263) surface mount |
| Pin Configuration | Gate - Drain - Source (left to right) | — |
| 실장 유형 | Through Hole | Surface Mount |
| Lead-Free / RoHS | Yes (PBF suffix = lead-free, RoHS compliant) | — |
| MSL 레벨 | 1 (not moisture-sensitive for TO-220) | — |
| Polarity | — | P-Channel |
| Continuous Drain Current (ID, Tc=25C) | — | -42 A |
| On-Resistance (RDS(on) max) | — | 20 mOhm @ VGS = -10V |
| Power Dissipation (PD, Tc=25C) | — | 170 W |
| 동작 접합 온도 | — | -55 C to +150 C |
| Thermal Resistance, Junction-to-Case (RthJC) | — | [DATA_NEEDED: RthJC, typical 0.6 C/W] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| RoHS 상태 | — | Compliant (PBF suffix indicates Pb-free) |
| Qualification | — | JEDEC standard |