IRF4905PBF vs IRF4905SPBF Comparison

Detailed side-by-side comparison of IRF4905PBF by Infineon and IRF4905SPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRF4905PBF IRF4905SPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.95 $1.18
FET Type P-Channel β€”
Technology HEXFET (IR MOSFET) HEXFET, planar cell
Drain-Source Voltage (VDS) -55 V -55 V
Continuous Drain Current (ID) at TC -74 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Power Dissipation (PD) at TC 200 W β€”
On-Resistance RDS(on) max at VGS=-10V 20 mΞ© β€”
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max] [DATA_NEEDED: VGS max, typical +/-20V]
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/range] -2.0 V to -4.0 V
Total Gate Charge (Qg) 120 nC 120 nC (typical per Mouser listing)
Operating Temperature Range -55 Β°C to +175 Β°C (junction) β€”
Package TO-220AB (through-hole) D2PAK (TO-263) surface mount
Pin Configuration Gate - Drain - Source (left to right) β€”
Mounting Type Through Hole Surface Mount
Lead-Free / RoHS Yes (PBF suffix = lead-free, RoHS compliant) β€”
MSL Level 1 (not moisture-sensitive for TO-220) β€”
Polarity β€” P-Channel
Continuous Drain Current (ID, Tc=25C) β€” -42 A
On-Resistance (RDS(on) max) β€” 20 mOhm @ VGS = -10V
Power Dissipation (PD, Tc=25C) β€” 170 W
Operating Junction Temperature β€” -55 C to +150 C
Thermal Resistance, Junction-to-Case (RthJC) β€” [DATA_NEEDED: RthJC, typical 0.6 C/W]
Input Capacitance (Ciss) β€” [DATA_NEEDED: Ciss]
RoHS Status β€” Compliant (PBF suffix indicates Pb-free)
Qualification β€” JEDEC standard

Datasheets & Resources

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