IRF540ZPBF vs IRF3710ZPBF 비교

다음의 상세 나란히 비교: IRF540ZPBF 제조: Infineon 및 IRF3710ZPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IRF540ZPBF IRF3710ZPBF
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.62 $0.88
Manufacturer Infineon Technologies (formerly International Rectifier) —
Part Number IRF540ZPBF —
Technology HEXFET Power MOSFET (N-Channel DMOS) HEXFET (Advanced Process)
Drain-Source Voltage (V_DS) 100 V —
Continuous Drain Current (I_D) at T_C=25C 36 A —
Pulsed Drain Current (I_DM) [DATA_NEEDED: pulsed drain current] —
Gate-Source Voltage (V_GS) max [DATA_NEEDED: V_GS maximum rating] —
Gate Threshold Voltage (V_GS(th)) [DATA_NEEDED: V_GS(th) typical] —
On-Resistance R_DS(on) max at V_GS=10V 26.5 mOhm —
Total Gate Charge (Q_g) 42 nC —
Power Dissipation (P_D) at T_C=25C 92 W —
Maximum Junction Temperature 175 C —
동작 접합 온도 범위 -55 C to +175 C —
패키지 TO-220AB (through-hole, 3-lead) TO-220AB (through-hole, 3 pins)
실장 유형 Through Hole Through Hole
핀 수 3 (Gate, Drain, Source) —
RoHS 상태 Compliant Compliant (PBF suffix)
Lead-Free Yes Yes
Automotive Qualified Yes (per datasheet description) —
트랜지스터 유형 — N-Channel MOSFET
Drain-Source Voltage (Vdss) — 100 V
Continuous Drain Current (Id) at Tc=25C — 59 A
Pulsed Drain Current (Idm) — [DATA_NEEDED: pulsed drain current]
Maximum Power Dissipation (Pd) at Tc=25C — 160 W
On-Resistance RDS(on) at VGS=10V — 18 mOhm (typical)
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: gate threshold voltage]
Total Gate Charge (Qg) — 82 nC (typical)
Maximum Junction Operating Temperature — 175 C
Gate Drive Voltage (Optimized) — 10 V
Pin Configuration — G-D-S (Gate-Drain-Source, standard TO-220)
Qualification Standard — JEDEC, Normal Level

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