IRF9530NPBF vs IRF9530NSTRLPBF 비교
다음의 상세 나란히 비교: IRF9530NPBF 제조: Infineon 및 IRF9530NSTRLPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IRF9530NPBF | IRF9530NSTRLPBF |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.65 | $0.65 |
| Polarity | P-Channel | P-Channel |
| Drain-Source Voltage (VDS) | -100 V | -100 V |
| Continuous Drain Current (ID) at TC=25°C | -14 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance RDS(on) max @ VGS=-10V | 200 mΩ | 200 mOhm |
| Gate-Source Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) typical value] | — |
| Total Gate Charge (Qg) typ | 38.7 nC | — |
| Maximum Power Dissition at TC=25°C | 79 W | — |
| 동작 접합 온도 | -55°C to +175°C | — |
| 패키지 | TO-220AB (through-hole) | D2PAK (TO-263-3) |
| 실장 유형 | Through Hole | Surface Mount |
| Mounting Screw Torque (max) | [DATA_NEEDED: maximum torque] | — |
| Avalanche Rating | Repetitive avalanche rated | — |
| dv/dt Rating | Dynamic dV/dt rated | — |
| Lead-Free / RoHS Status | Lead-Free (PBF suffix), RoHS compliant | — |
| Continuous Drain Current (ID) at TC=25C | — | -14 A |
| Total Gate Charge (Qg) | — | 38.7 nC (typ) |
| Gate-Source Voltage (VGS) max | — | +/-20 V |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) range] |
| Power Dissition (PD) at TC=25C | — | 79 W |
| Power Dissipation (PD) at TA=25C | — | 3.8 W |
| Thermal Resistance Theta_JC | — | 1.5 C/W (typ) |
| 동작 온도 범위 | — | -55C to +150C (TJ) |
| Lead-Free / RoHS | — | Yes (Pb-free suffix) |
| Technology | — | HEXFET (Planar DMOS) |
| Avalanche Rated | — | [DATA_NEEDED: EAS rating] |