IRFB3306PBF vs IRF4905LPBF 비교
다음의 상세 나란히 비교: IRFB3306PBF 제조: Infineon 및 IRF4905LPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IRFB3306PBF | IRF4905LPBF |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $1.05 | $0.98 |
| FET Type | N-Channel | — |
| Technology | IR HEXFET (MOSFET) | HEXFET (IR MOSFET) |
| Drain-Source Voltage (Vdss) | 60 V | — |
| Continuous Drain Current (Id) at Tc=25°C | 120 A | — |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (Vgs) max | ±20 V | ±20 V |
| Rds(on) max @ Vgs=10V | 4.2 mΩ | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) typical value] | — |
| Total Gate Charge (Qg) typ | [DATA_NEEDED: total gate charge Qg] | — |
| Gate-Drain Charge (Qgd) typ | 26 nC (nominal) | — |
| Power Dissipation (Pd) at Tc=25°C | 230 W | — |
| 동작 접합 온도 | -55°C to +175°C | -55C to +150C |
| 패키지 | TO-220AB (through-hole) | TO-262 (I2PAK), through-hole, 3-pin |
| 실장 유형 | Through Hole | Through Hole |
| RoHS / Lead-Free (PbF) | Yes (PbF suffix indicates lead-free, RoHS compliant) | — |
| Avalanche Rated | Yes | Yes |
| Body Diode | Intrinsic (avalanche-rated) | — |
| Polarity | — | P-Channel |
| Drain-Source Voltage (Vds) | — | -55 V |
| Continuous Drain Current (Id) @ Tc=25C | — | -74 A |
| On-Resistance Rds(on) max @ Vgs=-10V | — | 20 mOhm |
| Gate Threshold Voltage Vgs(th) typ | — | [DATA_NEEDED: Vgs(th) typical] |
| Total Power Dissipation (Ptot) @ Tc=25C | — | 200 W |
| Thermal Resistance Junction-to-Case (RthJC) | — | [DATA_NEEDED: RthJC value] |
| Rise Time (tr) typ | — | [DATA_NEEDED: rise time] |
| Fall Time (tf) typ | — | [DATA_NEEDED: fall time] |
| Lead-Free / RoHS | — | Yes (PbF suffix) |