IRFP250N vs IRFP250MPBF 비교
다음의 상세 나란히 비교: IRFP250N 제조: Infineon 및 IRFP250MPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IRFP250N | IRFP250MPBF |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $1.78 | $2.55 |
| Technology | N-Channel HEXFET Power MOSFET (Fifth Generation) | HEXFET (IR MOSFET) |
| Drain-Source Voltage (VDS) | 200 V | — |
| Continuous Drain Current (ID) at TC | 30 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Power Dissipation (PD) at TC | 214 W | — |
| On-Resistance RDS(on) | [DATA_NEEDED: typical RDS(on) at VGS=10V] | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical/range] | — |
| 패키지 | TO-247AC (through-hole) | — |
| 실장 유형 | Through Hole | Through Hole |
| 동작 온도 범위 | -55 C to +175 C (TJ) | — |
| Avalanche Energy Rating | Fully avalanche rated | — |
| dv/dt Rating | Dynamic dv/dt rated | — |
| Switching Frequency Optimization | Optimized for applications below 100 kHz | — |
| Qualification Standard | JEDEC | — |
| Lead-Free Status | Yes (PBF suffix) | — |
| RoHS 상태 | Compliant | Compliant |
| Planar Cell Structure | Yes (wide SOA) | — |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Part Number | — | IRFP250MPBF |
| 트랜지스터 유형 | — | N-Channel MOSFET |
| Drain-Source Voltage (Vds) | — | 200 V |
| Continuous Drain Current (Id) at Tc=25C | — | 30 A |
| Pulsed Drain Current (Idm) | — | [DATA_NEEDED: pulsed drain current value] |
| Static Drain-Source On-Resistance (RDS(on)) | — | 75 mOhm max @ Vgs=10V |
| Gate-Source Threshold Voltage (Vgs(th)) | — | 4 V (typ) |
| Total Gate Charge (Qg) | — | 82 nC |
| Power Dissipation (Pd) at Tc=25C | — | 214 W |
| 동작 접합 온도 | — | -55C to +175C |
| 패키지 / 케이스 | — | TO-247AC (3-pin + tab) |
| 핀 수 | — | 3 |
| Avalanche Rated | — | Yes |
| Lead-Free | — | Yes |
| MSL 레벨 | — | 1 (unlimited) |