IRFP250N vs IRFP250MPBF Сравнение
Подробное сравнение бок о бок IRFP250N от Infineon и IRFP250MPBF от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
IRFP250N - 200V 30A N-Channel HEXFET MOSFET | Infineon (Lead-Free (Pb-Free))
IRFP250N ✓ Активен
Сравнение характеристик
| Параметр | IRFP250N | IRFP250MPBF |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $1,78 | $2,55 |
| Technology | N-Channel HEXFET Power MOSFET (Fifth Generation) | HEXFET (IR MOSFET) |
| Drain-Source Voltage (VDS) | 200 V | — |
| Continuous Drain Current (ID) at TC | 30 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Power Dissipation (PD) at TC | 214 W | — |
| On-Resistance RDS(on) | [DATA_NEEDED: typical RDS(on) at VGS=10V] | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical/range] | — |
| Корпус | TO-247AC (through-hole) | — |
| Тип монтажа | Through Hole | Through Hole |
| Диапазон рабочих температур | -55 C to +175 C (TJ) | — |
| Avalanche Energy Rating | Fully avalanche rated | — |
| dv/dt Rating | Dynamic dv/dt rated | — |
| Switching Frequency Optimization | Optimized for applications below 100 kHz | — |
| Qualification Standard | JEDEC | — |
| Lead-Free Status | Yes (PBF suffix) | — |
| Статус RoHS | Compliant | Compliant |
| Planar Cell Structure | Yes (wide SOA) | — |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Part Number | — | IRFP250MPBF |
| Тип транзистора | — | N-Channel MOSFET |
| Drain-Source Voltage (Vds) | — | 200 V |
| Continuous Drain Current (Id) at Tc=25C | — | 30 A |
| Pulsed Drain Current (Idm) | — | [DATA_NEEDED: pulsed drain current value] |
| Static Drain-Source On-Resistance (RDS(on)) | — | 75 mOhm max @ Vgs=10V |
| Gate-Source Threshold Voltage (Vgs(th)) | — | 4 V (typ) |
| Total Gate Charge (Qg) | — | 82 nC |
| Power Dissipation (Pd) at Tc=25C | — | 214 W |
| Рабочая температура перехода | — | -55C to +175C |
| Корпус / Типоразмер | — | TO-247AC (3-pin + tab) |
| Количество выводов | — | 3 |
| Avalanche Rated | — | Yes |
| Lead-Free | — | Yes |
| Уровень MSL | — | 1 (unlimited) |