IRFR5410TRPBF vs IRFR1018ETRPBF 비교
다음의 상세 나란히 비교: IRFR5410TRPBF 제조: Infineon 및 IRFR1018ETRPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IRFR5410TRPBF | IRFR1018ETRPBF |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.71 | $0.36 |
| Polarity | P-Channel | — |
| Drain-Source Voltage (VDS) | -100 V | — |
| Continuous Drain Current (ID) at TC = 25 °C | -13 A | — |
| Static Drain-Source On-Resistance (RDS(on)) max at VGS = -10 V | 205 mΩ | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Total Gate Charge (Qg) typ | 70 nC | — |
| 패키지 | TO-252AA (DPAK), surface mount | TO-252AA (D-Pak) |
| Power Dissition (PD) at TC = 25 °C | 66 W | — |
| 동작 온도 범위 | -55 °C to +150 °C (TJ) | -55 °C to +175 °C |
| 실장 유형 | Surface Mount | Surface Mount |
| Technology | HEXFET (advanced process, Gen 5) | HEXFET |
| Avalanche Rated | Yes (fully avalanche rated) | Yes |
| Lead-Free / RoHS Status | Lead-free, RoHS compliant (PBF suffix) | — |
| MSL 레벨 | [DATA_NEEDED: MSL rating] | 1 |
| RDS(on) Test Conditions | VGS = -10 V, ID = -7.0 A | — |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (Vdss) | — | 60 V |
| Continuous Drain Current (Id) | — | 79 A (Tc) |
| Pulsed Drain Current (Idm) | — | [DATA_NEEDED: pulsed drain current] |
| Rds(on) Max @ Vgs=10V | — | 8.4 mΩ |
| Rds(on) Max @ Vgs=4.5V | — | [DATA_NEEDED: Rds(on) at 4.5V] |
| Gate Threshold Voltage (Vgs(th)) | — | 2.0 V to 4.0 V |
| Total Gate Charge (Qg) | — | 46 nC |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| Output Capacitance (Coss) | — | [DATA_NEEDED: Coss] |
| Reverse Transfer Capacitance (Crss) | — | [DATA_NEEDED: Crss] |
| Maximum Power Dissipation (Pd) | — | 110 W (Tc) |
| RoHS 상태 | — | Compliant |
| Lead-Free | — | Yes |