IRFS7440TRLPBF - 40V 120A StrongIRFET N-MOSFET | Infineon
부품 번호: IRFS7440TRLPBF ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.62 | $16.20 |
| 100 | $1.38 | $138.00 |
| 500 | $1.15 | $575.00 |
| 1,000 | $0.98 | $980.00 |
IRFS7440TRLPBF 개요
What is a StrongIRFET MOSFET? A StrongIRFET is Infineon's family of rugged N-channel power MOSFETs designed for high-current, low-frequency switching applications. It sits in the broader taxonomy: N-channel MOSFET -> power MOSFET -> discrete semiconductor -> power management component. StrongIRFET devices use a planar cell architecture optimized for low RDS(on), high avalanche ruggedness, and reliable body-diode behavior, making them workhorses for motor drive and synchronous rectification.
Key features include the 2.5 mΩ ultra-low RDS(on) at 10 V VGS, 120 A continuous drain current capability at 25°C case temperature, 208 W maximum power dissipation, and an optimized 90 nC gate charge that balances conduction loss with switching speed. The device is qualified to JEDEC standards and built on Infineon's silicon process tuned for switching below 100 kHz, where it delivers the best cost-to-performance ratio.
The TO-263 (D2PAK) surface-mount package provides a low thermal-resistance path from the silicon die to the PCB copper pad, enabling the 208 W dissipation rating when mounted on a properly sized land pattern with adequate bottom-side copper. The package is also lead-free and RoHS compliant, with a matte-tin finish for reliable solderability.
Typical applications include brushed and BLDC motor drives, battery-powered circuits, half-bridge and full-bridge topologies, synchronous rectifiers, resonant-mode power supplies, OR-ing and redundant power switches, DC/DC and AC/DC converters, and DC/AC inverters. The 40 V rating makes it ideal for 12 V and 24 V bus systems in automotive, industrial, and telecom environments.
When designing with this device, pay close attention to gate-drive voltage: it is optimized for 10 V VGS where it achieves the headline 2.5 mΩ RDS(on). Driving it from 5 V logic levels will dramatically increase on-resistance. Also note that continuous drain current derates strongly with case temperature—120 A is only valid at 25°C Tc.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet. Cross-brand equivalents were sourced from the verified alternatives cross-reference data.
드롭인 대체품: IRFS7440TRLPBF — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: IRFS7440TRLPBF (동일 폼 팩터 및 풋프린트) — 차이점: Package, Technology, Continuous Drain Current (ID) at Tc=25C, Drain-to-Source Voltage (VDS), FET Type.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
IRFS7440TRPBF
✅ 드롭인 ⚠️ 사양 미검증📋 참조 대체품 (카탈로그에 없음)
IRFS7440PBF
✅ 드롭인 ⚠️ 사양 미검증📋 참조 대체품 (카탈로그에 없음)
IRFS4010TRLPBF
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
$0.86 / 개
데이터시트 보기 →IRFS4321TRLPBF
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
$1.73 / 개
데이터시트 보기 →VBL1402
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
IRFS7440TRLPBF 최대 정격 & 전기적 특성
| Manufacturer | Infineon Technologies |
| Series | StrongIRFET |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide Semiconductor) |
| Drain-to-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID) at Tc=25C | 120 A |
| Power Dissipation (PD) at Tc=25C | 208 W |
| On-Resistance (RDS(on)) max at VGS=10V | 2.5 mOhm |
| Total Gate Charge (Qg) | 90 nC (typical) |
| Gate Drive Voltage (optimized) | 10 V (normal level) |
| Operating Frequency Range (optimized) | <100 kHz |
| 패키지 | TO-263 (D2PAK), surface mount |
| 실장 유형 | Surface Mount |
| RoHS 상태 | Compliant (lead-free) |
| Qualification | JEDEC standard |
IRFS7440TRLPBF 핀 구성
| 핀 1 | Gate — MOSFET gate drive input (10V nominal for low RDS(on)) |
| 핀 2 | Drain — MOSFET drain (electrically connected to the metal tab) |
| 핀 3 | Source — MOSFET source |
| 핀 TAB | Drain — Metal tab electrically connected to Drain; provides thermal path and main current-carrying terminal |
안전 동작 영역 - IRFS7440TRLPBF
일반적인 애플리케이션
IRFS7440TRLPBF 적합 용도: 6 애플리케이션s: BLDC Motor Drive, Brushed DC Motor Drive, Synchronous Rectifier, Battery-Powered Circuit / OR-ing, Resonant Mode Power Supply, DC/AC Inverter.
BLDC Motor Drive
The IRFS7440TRLPBF is explicitly listed for BLDC motor drive applications in the Infineon datasheet. Its 2.5 mΩ RDS(on) at 10 V VGS minimizes conduction loss in the PWM-switched phase legs, while the 120 A continuous rating covers e-bike, power-tool, drone, and small industrial servo drives operating from 24 V or 36 V battery packs. Placed as the low-side or high-side switch in a three-phase inverter with a gate driver such as the IR21064 or IRS2008, it delivers clean switching below 100 kHz where the StrongIRFET cell architecture is optimized. The 90 nC gate charge is manageable at 50 kHz PWM frequencies with a 1 A gate driver. Compared to using multiple paralleled smaller MOSFETs, a single IRFS7440TRLPBF per phase simplifies layout and reduces gate-drive complexity.
추천
Brushed DC Motor Drive
The IRFS7440TRLPBF suits brushed DC motor drive circuits including H-bridge and forward-converter topologies. Its 208 W power dissipation and 40 V VDS rating comfortably handle 24 V brushed motors drawing 50-80 A continuous in industrial automation, robotics, and electric vehicle traction applications. When wired as an H-bridge with two IRFS7440TRLPBF high-side and two low-side, plus complementary P-channel or PNP high-side drivers, the system can deliver bidirectional motor control with regenerative braking. The 2.5 mΩ RDS(on) keeps conduction loss under 2 W at 30 A, eliminating the need for forced-air cooling in many designs. Infineon's StrongIRFET ruggedness also tolerates the back-EMF transients generated when the motor is switched off.
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Synchronous Rectifier
The IRFS7440TRLPBF serves as a synchronous rectifier in isolated DC/DC converters including half-bridge, full-bridge, and forward topologies operating at 100 kHz or below. Its 2.5 mΩ RDS(on) replaces Schottky diodes in the secondary-side rectifier, eliminating diode forward drop (0.5-0.8 V) and improving efficiency by 3-5% at high output currents. The 40 V VDS rating suits 12 V and 24 V output rails. When used as the low-side synchronous FET in a buck-derived topology, its low Qrr body diode minimizes dead-time loss. Compared to dedicated Schottky diodes, this approach trades switching loss for conduction loss - the IRFS7440TRLPBF wins clearly at high currents above 20 A. StrongIRFET technology also delivers superior avalanche ruggedness during output short-circuit events.
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Battery-Powered Circuit / OR-ing
The IRFS7440TRLPBF works as an OR-ing MOSFET in redundant power systems and battery-management circuits where two power sources feed a common load. Its 2.5 mΩ RDS(on) dissipates less than 1 W at 20 A - significantly cooler than a Schottky OR-ing diode. In 24 V battery-backed systems, the device can switch between primary supply and battery without the heat-sinking overhead of diodes. Reverse-current blocking is achieved by orienting the body diode to block reverse flow, and the low RDS(on) minimizes voltage drop. The 40 V VDS comfortably exceeds 24 V nominal plus transient margin. This topology is common in telecom 48 V (when stepping down) and in server redundant-power applications.
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Resonant Mode Power Supply
The IRFS7440TRLPBF fits resonant-mode power supplies such as LLC and phase-shifted full-bridge converters. Its low RDS(on) handles the high RMS currents typical in resonant tank circuits, while the StrongIRFET cell structure provides the avalanche ruggedness needed to absorb the energy in leakage inductances during zero-voltage switching (ZVS) transitions. In an LLC converter operating at 100-200 kHz, this device typically handles 500 W to 1 kW output power with adequate heatsinking. The 90 nC gate charge is acceptable when paired with a gate driver capable of 1-2 A peak current. Designers should evaluate the body-diode reverse-recovery behavior carefully; the StrongIRFET family is specifically tuned to minimize Qrr for ZVS applications.
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DC/AC Inverter
The IRFS7440TRLPBF is suitable for low-voltage DC/AC inverter designs including solar micro-inverters, UPS systems, and small motor-drive inverters. In a full-bridge inverter configuration with four of these devices, a 24 VDC input can be converted to 120 VAC at up to 1 kW continuous output. The 120 A per-device rating provides ample margin for inverter inrush currents. At 50/60 Hz fundamental output frequency with PWM at 20 kHz, the switching losses are well within the device's 208 W dissipation envelope. Heatsinking is mandatory: at 1 kW output the inverter dissipates roughly 50-80 W in the four MOSFETs combined, requiring either a large heatsink or forced-air cooling. StrongIRFET's JEDEC qualification supports long-term reliability in continuous-operation applications.
추천
추천 제품 요약
엔지니어링 참조 데이터: IRFS7440TRLPBF — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | IRFS7440TRPBF | IRFS7440PBF | IRFS4010TRLPBF | IRFS4321TRLPBF | VBL1402 |
|---|---|---|---|---|---|---|
| Package | TO-263 (D2PAK) | TO-263 (D2PAK) - same | TO-263 (D2PAK) - same | TO-263 (D2PAK) - same | TO-263 (D2PAK) - same | TO-263 (D2PAK) - same |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | VBsemi |
| VDS Max | 40 V | 40 V | 40 V | 100 V | 150 V | 40 V |
| Technology Family | StrongIRFET | StrongIRFET | StrongIRFET | StrongIRFET | StrongIRFET | Planar N-MOSFET |
주요 차별점
- Lowest RDS(on) in 40V TO-263 StrongIRFET family (vs IRFB3207 (older generation))
- Higher VDS rating in same footprint (vs IRFS4010TRLPBF (100V variant))
- StrongIRFET ruggedness vs planar alternatives (vs VBL1402 (Chinese alternative))
설계 노트
Estimated: At 100 A continuous current and 2.5 mΩ RDS(on), the IRFS7440TRLPBF dissipates P = I² × R = 100² × 0.0025 = 25 W. The TO-263 package typically exhibits θJC around 0.5 C/W, giving a junction-to-case rise of 12.5°C at 25 W. For continuous operation, mount the device on at least 6 square inches of 2 oz copper on a multi-layer PCB with thermal vias to the inner ground plane. Without adequate copper, expect thermal runaway above 70-80 A load.
The TO-263 (D2PAK) tab is electrically connected to the Drain and serves as the primary thermal path. Solder the tab directly to a large copper pad (minimum 1 cm² of 2 oz copper) with thermal vias to inner planes. Place the gate-drive loop (gate resistor + driver output) as physically short as possible - the 90 nC gate charge means a 10 nH loop inductance creates ~5 V of gate ringing at 1 A/ns switching, potentially exceeding VGS max of ±20 V. Add a 10 kΩ gate-source pull-down resistor to ensure the MOSFET stays off during controller startup.
Do not drive the IRFS7440TRLPBF from 5 V logic directly. The datasheet specifies RDS(on) at VGS=10 V; at 5 V VGS the on-resistance can increase 3-5x, dramatically raising conduction loss and causing thermal runaway. Always use a dedicated gate driver such as the IRS2008 or IR21064 that provides 10 V drive. Also note that 120 A continuous rating assumes 25°C case temperature - at realistic 100°C case the continuous rating drops to roughly 60 A. Always verify SOA in your specific application by checking the datasheet's SOA curves.
규정 준수 정보
RoHS compliant per Infineon product page. Lead-free matte-tin finish. JEDEC qualified per datasheet. AEC-Q100 not specified in web data; not applicable for industrial/consumer use cases.
