IRFS7440TRLPBF vs IRFS4321TRLPBF 비교

다음의 상세 나란히 비교: IRFS7440TRLPBF 제조: Infineon 및 IRFS4321TRLPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IRFS7440TRLPBF IRFS4321TRLPBF
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.98 $1.73
Manufacturer Infineon Technologies —
Series StrongIRFET —
FET Type N-Channel N-Channel MOSFET, Metal Oxide
Technology MOSFET (Metal Oxide Semiconductor) IR HEXFET (IR MOSFET)
Drain-to-Source Voltage (VDS) 40 V 150 V
Continuous Drain Current (ID) at Tc=25C 120 A 85 A
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Power Dissipation (PD) at Tc=25C 208 W 350 W
On-Resistance (RDS(on)) max at VGS=10V 2.5 mOhm —
Gate-Source Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
Total Gate Charge (Qg) 90 nC (typical) —
Gate Drive Voltage (optimized) 10 V (normal level) —
Operating Frequency Range (optimized) <100 kHz —
패키지 TO-263 (D2PAK), surface mount TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
실장 유형 Surface Mount Surface Mount
동작 온도 범위 [DATA_NEEDED: junction temperature range] —
RoHS 상태 Compliant (lead-free) Compliant
Qualification JEDEC standard —
Continuous Drain Current (ID) at Tc=100C — [DATA_NEEDED: ID at Tc=100C]
RDS(on) Max at VGS=10V — 15 mOhm
RDS(on) Max at VGS=4.5V — [DATA_NEEDED: RDS(on) at VGS=4.5V]
Gate-to-Source Voltage (VGS) Max — ±20 V
Gate Threshold Voltage (VGS(th)) Typ — [DATA_NEEDED: VGS(th) typical]
Total Gate Charge (Qg) Typ — 71 nC
Total Gate Charge (Qg) Max — 110 nC
Thermal Resistance Junction-to-Case (RθJC) Max — 0.45 C/W
Thermal Resistance Junction-to-Case (RθJC) End-of-Life — 0.65 C/W (after 1000 cycles -55C to +150C)
동작 접합 온도 — -55C to +175C

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