IRFZ44NPBF vs IRF530NSTRLPBF 비교
다음의 상세 나란히 비교: IRFZ44NPBF 제조: Infineon 및 IRF530NSTRLPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IRFZ44NPBF | IRF530NSTRLPBF |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.65 | $0.89 |
| FET Type | N-Channel | — |
| Drain-to-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) at Tc=25C | 49 A | 17 A |
| Continuous Drain Current (ID) at Tc=100C | [DATA_NEEDED: ID at Tc=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-to-Source Voltage (VGS) max | +/- 20 V | — |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=10V | 17.5 mOhm | — |
| Total Gate Charge (Qg) | 42 nC | 24.7 nC |
| Power Dissipation (PD) at Tc=25C | 94 W | — |
| Thermal Resistance Junction-to-Case (RthJC) | 1.0 C/W | — |
| Thermal Resistance Junction-to-Ambient (RthJA) | 62 C/W | — |
| 동작 접합 온도 | -55C to +175C | — |
| 패키지 | TO-220AB (3-pin + tab) | — |
| 실장 유형 | Through Hole | Surface Mount |
| Technology | HEXFET (Advanced Process) | HEXFET (Planar Stripe Cell) |
| Avalanche Energy Rating (EAS) | [DATA_NEEDED: EAS rating] | — |
| RoHS 상태 | Compliant | — |
| Polarity | — | N-Channel |
| MOSFET Operating Mode | — | Enhancement |
| Drain-Source Breakdown Voltage (V(BR)DSS) | — | 100 V |
| Static Drain-Source On-Resistance (RDS(on)) max at VGS=10V | — | 90 mOhm |
| Power Dissipation (Pd) at Tc=25C | — | 70 W |
| Power Dissipation (Pd) at Ta=25C | — | 3.8 W |
| Gate-Source Voltage (VGS) max | — | +/- 20 V |
| Package Type | — | D2PAK (TO-263), 3-pin (2 + tab) |
| 동작 온도 범위 | — | -55C to +175C |
| Lead-Free / RoHS Status | — | Lead-Free / RoHS Compliant |
| Qualification Market | — | Industrial |