IRS2011STRPBF vs IRS2101STRPBF 비교

다음의 상세 나란히 비교: IRS2011STRPBF 제조: Infineon 및 IRS2101STRPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IRS2011STRPBF IRS2101STRPBF
브랜드 Infineon Infineon
카테고리 Power MOSFET Drivers Power MOSFET Drivers
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $1.55 $1.18
기능 Half-Bridge Gate Driver —
Configuration High-Side and Low-Side, Independent Channels —
출력 수 2 2-OUT
Maximum Offset Voltage (High-Side) 200 V —
Output Current (Source / Sink) 1 A typical / 1 A typical —
Propagation Delay (ton/toff) 60 ns typical —
Delay Matching 20 ns maximum —
Logic Input Compatibility 3.3 V CMOS / LSTTL 3.3 V / 5 V / 15 V
Bootstrap Supply Integrated bootstrap diode, floating channel —
Supply Voltage (VCC) 10 V to 20 V —
Negative Transient Tolerance Yes, dV/dt immune —
패키지 8-SOIC (DSO-8) 8-SOIC (SOIC-8)
동작 온도 -40 C to +125 C -40C to +125C
실장 유형 Surface Mount Surface Mount
RoHS 상태 Compliant (PBF suffix) Compliant (PBF suffix)
Suitable Drivers MOSFETs and IGBTs —
Driver Type — High-Side, Low-Side (Half-Bridge)
Number of Drivers — 2
출력 구성 — Non-Inverting
Maximum Offset Voltage — 600 V
Gate Drive Supply (VCC) — 10 V to 20 V
Bootstrap Supply (VBS) — 10 V to 20 V
Source Current (typical) — 0.29 A
Sink Current (typical) — 0.6 A
VS Transient Range — -5 V to +600 V (logic operational)
Undervoltage Lockout — Yes (VCC and VBS)
Propagation Delay Matching — Matched both channels
dV/dt Immunity — Yes (latch-immune CMOS)
Packaging — Tape & Reel (TRPBF)
Technology — HVIC + latch-immune CMOS

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