ISC015N06NM5ATMA1 vs IAUA210N10S5N024AUMA1 비교
다음의 상세 나란히 비교: ISC015N06NM5ATMA1 제조: Infineon 및 IAUA210N10S5N024AUMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
Infineon
IAUA210N10S5N024AUMA1 - 100V 2.4mΩ 210A OptiMOS 5 MOSFET | Infineon
IAUA210N10S5N024AUMA1 ✓ 활성사양 비교
| 파라미터 | ISC015N06NM5ATMA1 | IAUA210N10S5N024AUMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.62 | $1.65 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 | OptiMOS 5 |
| Polarity / Channel Type | N-Channel | — |
| Drain-to-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at TA=25C | 33 A | — |
| Pulsed Drain Current (IDM) at TC=25C | 259 A | — |
| On-Resistance RDS(on) typical at VGS=10V | 1.5 mOhm | — |
| Total Power Dissipation (TA) | 3 W | — |
| Total Power Dissipation (TC) | 188 W | — |
| 패키지 | PG-TDSON-8 (PQFN 5x6) Drain-Down | PG-HSOF-5-4 (7×8 mm² sTOLL) |
| 실장 유형 | Surface Mount | Surface Mount |
| 동작 온도 범위 | -55 C to +175 C | -55°C to +175°C (TJ) |
| Technology | Trench MOSFET (OptiMOS 5) | MOSFET (Metal Oxide), N-Channel |
| RoHS 상태 | Compliant | Compliant |
| MSL (Moisture Sensitivity Level) | 1 | — |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) @ Tj | — | 210 A |
| Continuous Drain Current (ID) @ TC=25°C | — | [DATA_NEEDED: ID at TC=25°C] |
| On-Resistance RDS(on) Max @ VGS=10V | — | 2.4 mΩ |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: typical VGS(th) value] |
| Gate Charge Qg (typ) | — | [DATA_NEEDED: Qg typ @ VGS=10V] |
| Power Dissipation (PD) @ TC=25°C | — | 238 W |
| Automotive Qualification | — | AEC-Q101 |
| Lead-Free | — | Yes |
| MSL 레벨 | — | [DATA_NEEDED: MSL rating] |
| Avalanche Energy Rated | — | Yes (per datasheet) |