MRF6S23140HR3 - 28W, 2.3GHz RF Power LDMOS | NXP Semiconductors
부품 번호: MRF6S23140HR3 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $95 | $95.00 |
| 10 | $87.5 | $875.00 |
| 100 | $78 | $7,800.00 |
| 500 | $70 | $35,000.00 |
| 1,000 | $65 | $65,000.00 |
MRF6S23140HR3 개요
What is an RF power LDMOS? RF power LDMOS (Laterally Diffused Metal-Oxide Semiconductor) transistors are a specialized class of power MOSFETs optimized for high-frequency, high-power amplification in the 1 MHz to 4 GHz range. LDMOS sits within the broader hierarchy: power MOSFET -> discrete semiconductor -> active RF component. Compared to bipolar RF transistors, LDMOS offers superior gain linearity, easier broadband matching, and better thermal stability, which has made it the dominant technology for cellular base-station power blocks since the late 1990s.
The MRF6S23140HR3 operates from a 28 V DC rail, exhibits typical quiescent drain current around 1.3 A in test conditions, and provides a rugged load-mismatch tolerance suitable for Doherty and conventional class-AB amplifier topologies. Its thermal performance is enabled by a ceramic NI-880H-2L flange package with low thermal resistance, allowing direct bolt-down mounting to a heatsink or cold-plate. The device is internally input-matched for the 2.3-2.4 GHz WiMAX/LTE band, simplifying PCB layout.
This part is widely specified for 2.3-2.4 GHz WiMAX, LTE Band 38, and 2 x W-CDMA macro-cell base-station power amplifiers. The 28 W average output is appropriate for driver stages of higher-power amplifiers and for small-cell or micro-cell final stages. Designers also deploy it in pulsed-RF and tactical-radio power blocks thanks to its high peak-to-average ratio handling.
When designing with this device, attention to drain-bias sequencing, gate-bias stability, and harmonic-filtering is essential. Always consult the manufacturer datasheet for application-circuit reference designs, load-pull data, and recommended PCB stack-up before finalizing the layout.
This page synthesizes distributor pricing, drop-in alternative listings, and practical RF design notes not consolidated in the manufacturer datasheet, supporting faster part selection and BOM validation.
드롭인 대체품: MRF6S23140HR3 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: MRF6S23140HR3 (동일 폼 팩터 및 풋프린트) — 차이점: Package / Case, Transistor Type, Mounting Type, Operating Frequency Range, Technology.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
MRF6S23140HSR3
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
MRF6S27085HR5
✅ 드롭인✓ 재고 있음
$21.85 / 개
데이터시트 보기 →MRF6S27050HR5
✅ 드롭인✓ 재고 있음
$17.5 / 개
데이터시트 보기 →MRF6S23140HR3 최대 정격 & 전기적 특성
| 트랜지스터 유형 | LDMOS, N-Channel Enhancement-Mode |
| Technology | Lateral N-Channel RF Power MOSFET |
| Drain-Source Voltage (Rated) | 68 V |
| Operating Drain Voltage (Typical) | 28 V |
| Test Quiescent Drain Current | 1.3 A |
| Operating Frequency Range | 2300 MHz to 2400 MHz |
| Test Frequency | 2.39 GHz |
| Output Power (Average, 2 x W-CDMA) | 28 W |
| Power Gain | 15.2 dB |
| 패키지 / 케이스 | NI-880H-2L (CASE 465B-03, STYLE 1) |
| 실장 유형 | Chassis / Flange Mount |
| Configuration | Single, push-pull capable |
| Input Matching | Internally matched (per datasheet) |
MRF6S23140HR3 핀 구성
| 핀 1 | RF Input / Gate — RF signal input and gate bias (internally matched) |
| 핀 2 | Drain — 28 V DC drain supply |
| 핀 3 | RF Output — RF signal output (matched network at drain) |
| 핀 Flange | Source / Thermal Ground — DC source and primary thermal path; must be bolted to heatsink |
일반적인 애플리케이션
MRF6S23140HR3 적합 용도: 6 애플리케이션s: 2.3-2.4 GHz LTE / WiMAX Base Station Final Stage, Doherty Power Amplifier Driver Stage, Tactical / Pulsed-RF Communication Power Block, Industrial / Scientific 2.4 GHz RF Energy, Repeater / Small-Cell Front-End Amplifier, RF Test & Measurement Power Amplifier Module.
2.3-2.4 GHz LTE / WiMAX Base Station Final Stage
The MRF6S23140HR3's 2300-2400 MHz operating band and 28 W average output at 15.2 dB gain map directly onto 2.3-2.4 GHz TDD-LTE Band 40 and legacy WiMAX macro-cell final stages. Its 28 V bias simplifies integration with standard telecom -48 V to 28 V converter rails. The internally input-matched NI-880H-2L ceramic package reduces external matching complexity, and 28 W average is appropriate for small-cell or micro-cell final stages where footprint and thermal dissipation dominate the design. Designers should pair the device with harmonic filters meeting ETSI or 3GPP spectral mask requirements. The load-mismatch ruggedness characteristic of LDMOS helps survive antenna VSWR events common in field deployments.
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Doherty Power Amplifier Driver Stage
The MRF6S23140HR3 serves as an excellent carrier or peaking device in 2.3-2.4 GHz Doherty amplifier architectures where 15.2 dB gain and 28 W average output balance linearity and efficiency. Its 28 V bias point and load-mismatch tolerance support the high peak-to-average ratios typical of OFDMA signals. Placed between the predriver LDMOS and the high-power final stage, it delivers clean gain with predictable phase behavior across the 100 MHz instantaneous bandwidth. Designers should reference NXP's Doherty application notes and validate load-pull data at the actual operating PAPR. Thermal mounting via the ceramic flange to a copper spreader is essential for sustained CW or high-duty-cycle operation.
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Tactical / Pulsed-RF Communication Power Block
Military and tactical radio systems operating in the 2.3-2.4 GHz band can leverage the MRF6S23140HR3 for pulsed-RF power amplification where high peak power, controlled duty cycle, and rugged thermal performance are essential. The NI-880H-2L ceramic flange package provides low thermal resistance and mechanical durability for harsh-environment deployment. Designers should evaluate peak power handling, duty-cycle derating, and bias sequencing per NXP's pulsed-RF guidelines. The 15.2 dB gain simplifies driver-chain design in compact manpack or vehicular radio platforms.
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Industrial / Scientific 2.4 GHz RF Energy
The 2.3-2.4 GHz ISM-adjacent band overlaps with emerging industrial RF-energy applications such as plasma generation, drying, and material processing. The MRF6S23140HR3's 28 W average rating with 28 V bias provides a solid building block for continuous or pulsed industrial RF sources. The ceramic package sustains the elevated thermal loads typical of CW industrial duty cycles when bolted to a properly sized heatsink. Designers should add harmonic filtering to comply with regional industrial-scientific emissions regulations and verify long-term junction temperature stays within datasheet limits.
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Repeater / Small-Cell Front-End Amplifier
Wireless repeaters and outdoor small cells in the 2.3-2.4 GHz band can use the MRF6S23140HR3 as the final amplification stage where 28 W average output provides adequate coverage extension without the cost and complexity of higher-power devices. Its internal input matching simplifies board layout in compact small-cell enclosures, while the 15.2 dB gain chain-budget headroom supports cascaded filter and duplexer losses. Thermal design via flange mounting to the radio chassis is critical in sealed outdoor units. Designers should validate ACPR performance against operator-specific emissions masks.
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RF Test & Measurement Power Amplifier Module
Test and measurement integrators building 2.3-2.4 GHz power-amplifier modules for ATE, EMC test beds, or general-purpose lab use can deploy the MRF6S23140HR3 as the active device. Its 28 W average output with 15.2 dB gain and 28 V bias is well-matched to standard laboratory DC supplies and instrumentation amplifiers. The ceramic NI-880H-2L flange enables repeatable bench-mount thermal characterization and simplifies swappedevice qualification testing. Designers should include precision bias tees, directional couplers, and circulator protection to maximize measurement repeatability and device lifetime.
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추천 제품 요약
엔지니어링 참조 데이터: MRF6S23140HR3 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | MRF6S23140HSR3 | MRF6S27085HR5 | MRF6S27050HR5 |
|---|---|---|---|---|
| Package | NI-880H-2L (CASE 465B-03, STYLE 1) | NI-880 alternate ceramic variant | NI-880 family | NI-880 family |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Operating Frequency | 2300-2400 MHz | 2300-2400 MHz | 2600-2700 MHz | 2600-2700 MHz |
| Drain Supply Voltage | 28 V | 28 V | 28 V | 28 V |
| Output Power (Average) | 28 W | 28 W | 85 W (different band) | 50 W (different band) |
| Technology | LDMOS, N-Channel | LDMOS, N-Channel | LDMOS, N-Channel | LDMOS, N-Channel |
| Mounting Type | Ceramic Flange (bolt-down) | Ceramic Flange | Ceramic Flange | Ceramic Flange |
주요 차별점
- Optimized specifically for 2.3-2.4 GHz with internal input matching (vs MRF6S27085HR5)
- Same electrical die across the MRF6S23140H family (vs MRF6S23140HSR3)
- 28 W power class balances gain, efficiency, and thermal load (vs MRF6S27050HR5)
설계 노트
Estimated: at 28 W average output with 28 V drain and ~50% drain efficiency, the device dissipates roughly 28 W internally. The NI-880H-2L ceramic flange must be bolted to a heatsink or cold-plate with thermal compound; junction temperature must remain below the datasheet maximum (typically 200 C). For continuous CW operation, derate aggressively and confirm with the published thermal-resistance curve.
Use the NXP reference design stack-up: Rogers RO4003C or equivalent low-loss dielectric for the matching network, with the drain bias feed routed through a quarter-wave stub or bias tee. Keep the gate and drain traces short, enclose RF paths in a continuous ground moat, and place 100 pF and 10 nF decoupling directly at the drain lead. Solder the flange with a uniform thermal compound layer; torque to the datasheet-specified value to avoid ceramic cracking.
Do not exceed the 68 V drain-source absolute maximum even momentarily - inductive kickback from the drain choke can produce spikes well above the DC rail. Add a TVS clamp or RC snubber across the choke if the supply is hot-switched. Gate bias must be applied before drain bias; reversed sequencing risks parametric shift. Always verify quiescent current at the recommended gate voltage per device - LDMOS IDQ varies unit to unit.
규정 준수 정보
Specific RoHS/REACH status not present in verified web data; consult NXP product page or PCN documents. AEC-Q100 not applicable - this is a discrete RF power MOSFET, not an automotive-grade IC.
