MRF6V2300NR5 - 300W RF Power MOSFET, 10-600 MHz, 50V | NXP
부품 번호: MRF6V2300NR5 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $198 | $198.00 |
| 10 | $178.2 | $1,782.00 |
| 50 | $158.4 | $7,920.00 |
| 100 | $138.6 | $13,860.00 |
| 500 | $118.8 | $59,400.00 |
MRF6V2300NR5 개요
What is an RF Power MOSFET? An RF power MOSFET is a specialized lateral double-diffused MOS transistor engineered to deliver high RF output power with high gain and efficiency at high frequencies. RF power MOSFETs (a sub-family of power MOSFETs -> power transistors -> discrete semiconductors) use a lateral structure rather than the vertical structure of low-frequency power MOSFETs, reducing parasitic capacitance and enabling VHF/UHF operation. The MRF6V2300NR5 belongs to NXP's MRF6V family of 50 V broadband LDMOS RF power devices.
Key features of the MRF6V2300NR5 include 300 W CW output power, a 50 V drain supply rating, broadband operation from 10 MHz to 600 MHz, and 25.5 dB typical gain at 220 MHz. The part is housed in the TO-270 WB-4 ceramic package with bolt-down flanges for direct heatsink mounting, providing low thermal resistance for CW dissipation. It is an unmatched device, leaving input and output matching to the system designer for tuning across sub-bands.
Technically, the device uses NXP's high-voltage LDMOS process with a lateral N-channel enhancement-mode structure. The TO-270 ceramic-air-cavity package provides hermetic sealing and low parasitic inductance, supporting broadband performance. Operating at 50 V VDD rather than 28 V allows higher RF output power with the same device periphery, but requires careful bias sequencing and tuned output combiners.
Typical applications include VHF/UHF broadcast transmitters, industrial RF heating and plasma generators, MRI RF power amplifiers, scientific particle accelerators, and radar driver stages. The wide frequency range makes one SKU reusable across multiple sub-bands simply by retuning the matching networks.
A primary design consideration is thermal management: at 300 W RF output with ~55% efficiency, the device dissipates roughly 245 W as heat. Mounting on a heatsink with low thermal resistance (and proper forced-air cooling for CW service) is essential. Unmatched input/output networks must be designed carefully, as the part is not internally matched.
This page synthesizes distributor pricing, same-family NXP alternates, and practical RF design notes that complement but do not duplicate the manufacturer datasheet.
드롭인 대체품: MRF6V2300NR5 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
MRF6V2300NR1
✅ 드롭인✓ 재고 있음
$107.5 / 개
데이터시트 보기 →MRF6V2300NBR1
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
MRF6VP3450
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
MRF6V2300NR5 최대 정격 & 전기적 특성
| Manufacturer | NXP Semiconductors (formerly Freescale) |
| 트랜지스터 유형 | LDMOS, N-Channel, Enhancement-Mode, Lateral |
| Technology | Lateral Double-Diffused MOS (LDMOS) |
| Drain-Source Voltage (Vdss) Rated | 110 V |
| Typical Operating Drain Voltage | 50 V |
| Frequency Range | 10 MHz to 600 MHz |
| Test Frequency | 220 MHz |
| Typical Output Power (CW) | 300 W |
| Typical Power Gain | 25.5 dB at 220 MHz |
| Drain Current (Id) | 900 mA (DC bias) |
| Input Matching | Unmatched (external matching required) |
| 패키지 | TO-270 WB-4 (ceramic, air-cavity, bolt-down) |
| 실장 유형 | Chassis / Heatsink Mount |
| Operating Mode | CW large-signal / driver |
| Application | Industrial, medical, scientific RF power |
MRF6V2300NR5 핀 구성
| 핀 1 | Drain (RF Output) — Drain bias and RF output through matching network |
| 핀 2 | Gate (RF Input) — Gate bias and RF input through matching network |
| 핀 3 | Source — Source connection, tied to flange ground |
| 핀 4 | Source — Source connection, tied to flange ground |
| 핀 5 | Flange — Thermal and electrical ground; bolt to heatsink |
DC 안전 동작 영역
일반적인 애플리케이션
MRF6V2300NR5 적합 용도: 6 애플리케이션s: VHF/UHF Broadcast Transmitter, Industrial RF Heating / Plasma Generation, MRI RF Power Amplifier, Scientific Particle Accelerator Driver, VHF Radar Driver Stage, RF Power Lab Amplifier / Test Bench.
VHF/UHF Broadcast Transmitter
The MRF6V2300NR5's 300 W CW output and 25.5 dB gain at 220 MHz make it well suited as a final or driver in VHF broadcast transmitters covering the 54-216 MHz band. Per the NXP datasheet, its broadband 10-600 MHz response lets a single SKU serve multiple broadcast sub-bands simply by retuning the output matching network. At 50 V operation it avoids the higher-voltage supply rails required by competing VHV MOSFETs. The TO-270 WB-4 ceramic flange package bolts directly to the transmitter heatsink, simplifying chassis integration. Designers should incorporate a directional coupler and VSWR foldback to protect the LDMOS die from antenna mismatch transients.
추천
Industrial RF Heating / Plasma Generation
Industrial RF heating and plasma generators at 13.56 MHz, 27.12 MHz, and 40.68 MHz ISM bands benefit from the MRF6V2300NR5's CW-rated 300 W output and high gain. Per the NXP datasheet, the LDMOS die delivers 300 W continuously, suitable as the final stage in 1-3 kW systems when combined with combiners. The 50 V drain bias simplifies the power supply compared to higher-voltage parts. Robust unmatched input/output allows the matching network to be optimized for each specific ISM frequency. Forced-air cooling is essential at 300 W CW - chassis design should include a thermistor-driven fan circuit tied to the bias sequencer.
추천
MRI RF Power Amplifier
MRI scanners operating at 64 MHz, 128 MHz, or 300 MHz Larmor frequencies use the MRF6V2300NR5 as a CW RF power stage. Per the NXP datasheet, its 25.5 dB gain and 300 W output meet the power requirements of low-to-mid-field MRI transmitters when paired with a suitable input matching network. The broadband LDMOS response supports the discrete operating frequencies of 1.5T and 3T systems without part changes. Hermetic TO-270 ceramic packaging provides the long-term reliability required in medical imaging equipment. Coil designers should carefully model the load impedance to optimize the LDMOS drain efficiency under varying coil Q conditions.
추천
Scientific Particle Accelerator Driver
Particle accelerator RF driver stages in the VHF/UHF range use the MRF6V2300NR5 as a CW amplifier to drive higher-power gridded tubes or additional solid-state combiners. Per the NXP datasheet, its 25.5 dB gain reduces the required drive power from upstream stages, while 300 W output provides ample headroom. The 10-600 MHz range covers several accelerator fundamental frequencies including 162.5 MHz and 217 MHz. The unmatched design allows precise impedance matching to the accelerator cavity. Pulse-mode operation is not specified - this part is for CW service only.
추천
VHF Radar Driver Stage
Long-range surveillance and weather radars operating in the 200-400 MHz band use the MRF6V2300NR5 as a CW or long-pulse driver stage feeding higher-power final amplifiers. Per the NXP datasheet, its 25.5 dB gain at 220 MHz provides excellent drive margin, and the unmatched design allows the input network to be tuned to the specific radar IF/RF chain frequency. The bolt-down TO-270 WB-4 package withstands the mechanical vibration typical of mobile radar platforms. System designers should add a circulator/isolator between the driver output and the next stage to protect against reflected power.
추천
RF Power Lab Amplifier / Test Bench
Engineering laboratories and EMC test houses use the MRF6V2300NR5 as a broadband CW power amplifier covering 10-600 MHz for general-purpose RF testing, antenna characterization, and conducted immunity setups. Per the NXP datasheet, 300 W output and 25.5 dB gain deliver a usable +54 dBm test signal with modest drive. A single amplifier covers the full spectrum of common EMC and wireless test bands, eliminating the need for multiple narrow-band amplifiers. The unmatched design lets the test engineer retune matching networks for specific test frequencies. Add a calibrated bidirectional coupler for accurate power measurements.
추천
추천 제품 요약
엔지니어링 참조 데이터: MRF6V2300NR5 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | MRF6V2300NR1 | MRF6V2300NBR1 | MRF6VP3450 |
|---|---|---|---|---|
| Package | TO-270 WB-4 | TO-270 WB-4 - same | TO-270 WB-4 - same | TO-270 WB-4 - same |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Output Power (CW, typical) | 300 W | 300 W | 300 W | 450 W |
| Operating Drain Voltage | 50 V | 50 V | 50 V | 50 V |
| Frequency Range | 10-600 MHz | 10-600 MHz | 10-600 MHz | 10-600 MHz |
| Power Gain (typ @ 220 MHz) | 25.5 dB | 25.5 dB | 25.5 dB | 25.0 dB (typical) |
| Drain-Source Voltage Rating (Vdss) | 110 V | 110 V | 110 V | 110 V |
| Internal Matching | Unmatched | Unmatched | Unmatched | Unmatched |
| Packaging Quantity | 50 (R5) | 1 (R1) | 1 (R1) | 1 (R1) |
주요 차별점
- Broadband 10-600 MHz coverage from a single SKU (vs MRF6VP3450)
- Volume-optimized tape-and-reel packaging variant (vs MRF6V2300NR1)
- 50 V operation simplifies power supply vs 28 V parts (vs MRF6V2010 (28 V variant))
설계 노트
Estimated: at 300 W RF output and 55% drain efficiency, the MRF6V2300NR5 dissipates roughly 245 W as heat into the heatsink. With a junction-to-case thermal resistance of approximately 0.07 C/W for the TO-270 WB-4 package (per the NXP datasheet thermal data), the junction rises about 17 C above the case. Bolt the flange to a heatsink with thermal compound and forced-air cooling capable of holding the case below 80 C for CW service. The flange mounting holes must use the specified torque to avoid thermal interface degradation.
The MRF6V2300NR5 is a flange-mount chassis part, not a PCB-mount part. The TO-270 WB-4 package bolts directly to the chassis/heatsink; only the gate, drain, and source leads protrude into the matching network cavity. Use PTFE or Rogers RO4350B substrate for the matching network PCB for low loss at VHF/UHF. Keep gate and drain matching traces short and use a continuous ground plane bonded to the chassis. Place a small gate-source resistor (typically 100 ohms) at the gate lead to suppress VHF parasitic oscillations.
Common pitfalls with the MRF6V2300NR5 include: (1) exceeding the 110 V Vdss rating during drain supply transients - always use a soft-start and crowbar; (2) driving into a poor VSWR without a circulator/isolator, which can rapidly overheat the die; (3) omitting the gate-source pull-down resistor, which allows the gate to float and the part to self-oscillate when bias is removed; (4) using FR-4 PCB for the matching network at frequencies above 100 MHz, which adds significant loss; (5) operating without proper sequencing that turns on the gate bias before the drain supply.
The unmatched design of the MRF6V2300NR5 means the input and output matching networks are part of the RF design. Per the NXP datasheet reference circuit, start with low-pass L-C topologies for sub-100 MHz operation and switch to band-pass topologies for VHF/UHF. Use high-Q ceramic or mica capacitors in the matching network and air-core or powdered-iron inductors rated for the expected RF current. Place a directional coupler and VSWR detector at the output to monitor reflected power and trigger a fast gate bias shut-down on mismatch.
규정 준수 정보
AEC-Q100 not applicable - this is a discrete RF power MOSFET, not an automotive-qualified IC. RoHS, REACH, lead-free, and halogen-free status not stated in the Verified Web Data; consult the manufacturer datasheet or NXP product page for current compliance certificates.
