MW7IC2240NBR1 - 4W W-CDMA RF LDMOS Power Amplifier | NXP
부품 번호: MW7IC2240NBR1 ✗ 단종| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $45 | $45.00 |
| 10 | $42.5 | $425.00 |
| 100 | $38 | $3,800.00 |
| 500 | $33.5 | $16,750.00 |
| 1,000 | $29 | $29,000.00 |
MW7IC2240NBR1 개요
A radio-frequency power amplifier (RF PA) is the final active stage of a wireless transmitter chain, responsible for boosting a low-power modulated signal from the transceiver/exciter to a level suitable for the antenna and over-the-air transmission. LDMOS (Laterally Diffused Metal-Oxide Semiconductor) is the dominant technology for sub-6 GHz base-station PAs because it offers high power density, excellent linearity under digital modulation, robust VSWR tolerance, and cost-effective 28-32 V operation. The MW7IC2240NBR1 sits within the hierarchy: RF power amplifier -> power amplifier -> amplifier IC -> RF & wireless -> semiconductor.
The MW7IC2240NBR1 features 50 ohm on-chip matching, which removes the need for external input/output matching networks and simplifies PCB layout. Two quiescent-current bias pins (IDQ1 = 90 mA, IDQ2 = 420 mA) allow independent bias setting for the driver and final stages to optimize gain, linearity, and efficiency. The device is 100% PAR-tested for guaranteed output power capability under W-CDMA-like signals and is characterized with series equivalent large-signal impedance parameters and common-source S-parameters for accurate system-level simulation.
This page synthesizes distributor stock, pricing tiers, and same-package drop-in alternatives sourced from the manufacturer datasheet and cross-reference tools - information not aggregated on a single distributor page.
드롭인 대체품: MW7IC2240NBR1 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: MW7IC2240NBR1 (동일 폼 팩터 및 풋프린트) — 차이점: Frequency Range, Technology, Mounting Type, Package, Quiescent Current Stage 1 (IDQ1).
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
MW7IC2240GNR1
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
MW7IC2240NR1
✅ 드롭인✓ 재고 있음
$13.16 / 개
데이터시트 보기 →MW6IC2240NBR1
✅ 드롭인✓ 재고 있음
$19.8 / 개
데이터시트 보기 →MW7IC2725NR1
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
MW7IC2240NBR1 최대 정격 & 전기적 특성
| Frequency Range | 2110 MHz to 2170 MHz (usable 2000-2200 MHz) |
| Modulation / RF Type | W-CDMA (also TD-SCDMA, LTE) |
| Output Power (Average) | 4 W Avg. @ 2112.5 MHz, single-carrier W-CDMA |
| Supply Voltage (VDD) | 28 V (rated 24 V to 32 V operation) |
| Quiescent Current Stage 1 (IDQ1) | 90 mA |
| Quiescent Current Stage 2 (IDQ2) | 420 mA |
| Minimum Gain | 15 dB (typical 30 dB) |
| Input VSWR | 5:1 |
| Output VSWR | 5:1 |
| Nominal Impedance | 50 ohm (on-chip matched) |
| P1dB (Output) | 46 dBm (per distributor listing) |
| Technology | RF LDMOS (multi-stage integrated) |
| 패키지 | TO-272 WB-16 (over-molded plastic, 16-lead) |
| 실장 유형 | Surface Mount |
| Terminal Finish | Matte Tin (Sn) |
| Package Body Material | Plastic / Epoxy |
| Operating Mode | 100% PAR tested for W-CDMA-like signals |
MW7IC2240NBR1 핀 구성
| 핀 1 | RF_IN — RF input (50 ohm, on-chip matched) |
| 핀 2 | VGG1 — Gate bias for driver stage |
| 핀 3 | GND — Ground / thermal pad |
| 핀 4 | VDD1 — Drain supply for driver stage (28 V) |
| 핀 5 | GND — Ground |
| 핀 6 | RF_OUT — RF output (50 ohm, on-chip matched) |
| 핀 7 | VDD2 — Drain supply for final stage (28 V) |
| 핀 8 | GND — Ground / thermal pad |
| 핀 9 | VGG2 — Gate bias for final stage |
| 핀 10 | NC — Not connected (per datasheet) |
| 핀 11 | GND — Ground |
| 핀 12 | NC — Not connected (per datasheet) |
| 핀 13 | GND — Ground / thermal pad |
| 핀 14 | NC — Not connected (per datasheet) |
| 핀 15 | GND — Ground |
| 핀 16 | NC — Not connected (per datasheet) |
DC 안전 동작 영역 (LDMOS Integrated PA)
일반적인 애플리케이션
MW7IC2240NBR1 적합 용도: 6 애플리케이션s: W-CDMA / UMTS Base Station Power Amplifier, TD-SCDMA Repeater / Small-Cell PA, LTE Band 1 Driver Amplifier, Public-Safety / Private LTE PA, Industrial RF Heating / Plasma Driver (2.1 GHz ISM-adjacent), Avionics / Datalink Transmitter (custom-filtered 2.1 GHz).
W-CDMA / UMTS Base Station Power Amplifier
The MW7IC2240NBR1 is purpose-built for the 2110-2170 MHz UMTS downlink band used in 3G macro and micro base stations. Its 4 W average W-CDMA output with PAR = 7.5 dB matches a small-cell or repeater final-stage power target, while 30 dB typical gain eliminates an external driver stage. The on-chip 50 ohm matching simplifies the PCB layout around the heatsink flange, and the device is 100% PAR-tested to guarantee linear output under real-world digitally modulated drive. Placed after the transceiver/exciter chain with a 28 V rail and input attenuator from PIN, the MW7IC2240NBR1 drives the antenna filter with ACPR-compliant 3GPP W-CDMA spectra in a 3.84 MHz channel bandwidth at +/-5 MHz offset.
추천
TD-SCDMA Repeater / Small-Cell PA
The MW7IC2240NBR1's 2000-2200 MHz usable range covers the 2010-2025 MHz TD-SCDMA uplink and 1900-1920 MHz extended modes when paired with external filtering, making it well-suited for indoor TD-SCDMA repeaters. Its 5:1 input and output VSWR tolerance protects the final stage against antenna mismatch in dense urban deployments. The 28 V operation matches standard small-cell PSU rails, and the multi-stage structure with independent IDQ1 and IDQ2 biasing lets designers trade off gain for efficiency depending on traffic load. Placed between the DPD feedback path and the duplexer with 28 V drain switching, the MW7IC2240NBR1 sustains linear TD-SCDMA output at 4 W average while the bias network adjusts quiescent current to optimize DC consumption at low traffic.
추천
LTE Band 1 Driver Amplifier
LTE Band 1 occupies 2110-2170 MHz, exactly the MW7IC2240NBR1's specified band. At 4 W average with a 7.5 dB LTE PAR profile, the part can serve as the final PA in a small-cell LTE Band 1 radio or as a driver stage for a higher-power macro BTS PA. The LDMOS technology provides the linearity required for OFDM signals with high peak-to-average ratios, and the 28 V supply is the standard rail for LTE base-station infrastructure. Compared with a discrete transistor solution, the MW7IC2240NBR1 reduces the BOM by removing external matching components and a bias sequencer. Placed between the digital pre-distortion feedback path and the higher-power PA chain, the MW7IC2240NBR1 provides 30 dB of gain and 4 W of linear output, with the 28 V drain supplied through an isolated switching converter to keep the PA chain noise off the modulator reference.
추천
Public-Safety / Private LTE PA
The 2110-2170 MHz band is shared with some public-safety and private LTE networks in Region 1, and the MW7IC2240NBR1's W-CDMA / LTE modulation support makes it usable in these deployments. The TO-272 WB-16 over-molded plastic body is smaller and lighter than ceramic-packaged PAs, which matters for vehicle-mounted and portable repeaters. Its 5:1 VSWR tolerance handles the variable antenna conditions of temporary or vehicular installations where the antenna may be obstructed. Placed inside a ruggedized RF module with shock-mounted PCB and weatherproof housing, the MW7IC2240NBR1 delivers 4 W average output to the rooftop antenna while the bias network maintains IDQ2 = 420 mA for thermal stability across the -40 C to +85 C base-station operating range.
추천
Industrial RF Heating / Plasma Driver (2.1 GHz ISM-adjacent)
Although the 2110-2170 MHz band is licensed for cellular use, industrial-scientific-medical (ISM) equipment operating on nearby frequencies can leverage the MW7IC2240NBR1 as a building block when filtered appropriately. The 28 V LDMOS architecture and 4 W average continuous power support plasma generation and RF heating applications that need stable, repeatable 2 GHz-class drive. The 100% PAR-tested output capability ensures that high-CREST-factor loads do not push the device outside its linear region. Placed inside an RF generator with a bandpass cavity filter and directional coupler, the MW7IC2240NBR1 delivers 4 W to the plasma chamber, with the 28 V drain modulated by an external AGC loop that adjusts quiescent current in response to reflected-power feedback.
추천
Avionics / Datalink Transmitter (custom-filtered 2.1 GHz)
Some airborne datalink and telemetry systems operate in custom-filtered windows near the 2.1 GHz cellular band. The MW7IC2240NBR1's small TO-272 WB-16 footprint and 4 W average output are well-matched to compact airborne transmitters where size, weight, and power (SWaP) are critical. Its 5:1 VSWR tolerance handles the variable VSWR presented by an airborne antenna under banking maneuvers. The multi-stage LDMOS design provides the gain needed to drive a single PA from a low-power exciter without an intermediate stage. Placed inside a vibration-isolated RF tray with a low-loss bandpass filter and circulator on the output, the MW7IC2240NBR1 transmits 4 W average to the antenna, with the 28 V rail conditioned by a hold-up capacitor bank to ride out aircraft power transients.
추천
추천 제품 요약
엔지니어링 참조 데이터: MW7IC2240NBR1 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | MW7IC2240GNR1 | MW7IC2240NR1 | MW6IC2240NBR1 | MW7IC2725NR1 |
|---|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | TO-272 WB-16 | TO-272 WB-16 - same | TO-272 WB-16 - same | TO-272 WB-16 - same | TO-272 WB-16 - same |
| Frequency Range | 2110-2170 MHz | 2110-2170 MHz | 2110-2170 MHz | 2110-2170 MHz | 2600-2700 MHz |
| Output Power (Avg.) | 4 W | 4 W | 4 W | 4 W | 5 W (P1dB ~25 W CW) |
| Typical Gain | 30 dB | 30 dB | 30 dB | ~29 dB | ~28 dB |
| Supply Voltage | 28 V (24-32 V rated) | 28 V | 28 V | 28 V | 28 V |
| Package Body | Over-molded plastic (NB) | Plastic (GN suffix variant) | Non-overmold (N suffix) | Over-molded plastic (NB) | Non-overmold (N suffix) |
| Lifecycle Status | Obsolete | Active (in production) | Obsolete | Obsolete | Obsolete |
주요 차별점
- On-chip 50 ohm input/output matching (vs Discrete LDMOS transistor solution)
- 100% PAR-tested for guaranteed W-CDMA output capability (vs Generic RF PA without PAR testing)
- Multi-stage integrated design with independent IDQ1 / IDQ2 biasing (vs Two-stage discrete PA chain)
설계 노트
Estimated: at 4 W Avg. W-CDMA output from 28 V the dissipated power is roughly 11-14 W. The TO-272 WB-16 over-mold body has a typical theta_JC of about 1.5 C/W per NXP LDMOS family curves. Mount the device on a continuous copper ground pour across all GND pins and add a bolted-on aluminum heatsink or cold plate for CW or high-duty operation. Without a heatsink the junction temperature can exceed 150 C at maximum dissipation, triggering thermal shutdown.
Keep the 28 V drain traces wide (>=1 mm per ampere) and decouple at each pin with a 100 nF ceramic + 10 uF electrolytic + 220 uF bulk capacitor stack. Place the gate-bias RC networks (VGG1, VGG2) within 5 mm of their respective pins to prevent low-frequency oscillation. Route RF input and output traces as 50 ohm microstrip on the top layer over a continuous ground plane; the on-chip matching tolerates small PCB parasitic mismatch but a directional coupler on the output is recommended for closed-loop AGC.
Do not exceed 32 V on VDD1 or VDD2 - the LDMOS die is rated 24-32 V only. Sequence gate bias before drain voltage (typical: VGG first, then ramp VDD) to avoid uncontrolled current spikes that can blow the bond wires. The MW7IC2240NBR1 is obsolete as of 2026-10-15; new designs should target the in-production MW7IC2240GNR1 family variant. When biasing, set IDQ1 = 90 mA and IDQ2 = 420 mA at room temperature and re-trim for thermal compensation in production.
규정 준수 정보
Terminal finish is Matte Tin (Sn) per distributor listing, indicating lead-free assembly. RoHS, REACH, halogen-free and conflict-minerals status were not present in the verified web data and are marked 'unknown'. AEC-Q100 is not applicable - this is a base-station RF power device, not an automotive-qualified part.
