STB60NF06T4 vs IRF1010ESTRLPBF 비교
다음의 상세 나란히 비교: STB60NF06T4 제조: STMicroelectronics 및 IRF1010ESTRLPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
STMicroelectronics
STB60NF06T4 - 60V, 60A N-Channel Power MOSFET | STMicroelectronics
STB60NF06T4 ✓ 활성
사양 비교
| 파라미터 | STB60NF06T4 | IRF1010ESTRLPBF |
|---|---|---|
| 브랜드 | STMicroelectronics | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.80 | $0.00 |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at 25°C | 60 A | — |
| Continuous Drain Current (ID) at 100°C | 42 A | — |
| Pulsed Drain Current (IDM) | 240 A | — |
| On-Resistance (RDS(on)) at VGS=10V | 14 mΩ (typ), 18 mΩ (max) | — |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Gate Charge (Qg) | 60 nC (typ) | — |
| Input Capacitance (Ciss) | 2200 pF (typ) | — |
| Output Capacitance (Coss) | 350 pF (typ) | — |
| Reverse Transfer Capacitance (Crss) | 120 pF (typ) | — |
| Avalanche Energy (EAS) | 300 mJ | — |
| 동작 온도 범위 | -55°C to +175°C | — |
| 패키지 | D2PAK (TO-263) | D2PAK (TO-263) |
| 실장 유형 | Surface Mount | Surface Mount |
| RoHS 상태 | Compliant | — |
| 할로겐 프리 | Yes | — |
| FET Type | — | N-Channel |
| Technology | — | HEXFET planar |
| Drain-Source Voltage (Vdss) | — | 60 V |
| Continuous Drain Current (Id) @ Tc | — | 84 A |
| Power Dissipation (Pd) @ Tc | — | 200 W |
| On-Resistance (RDS on) @ VGS=10V | — | 12 mOhm |
| Total Gate Charge (Qg) | — | 86.6 nC |
| Operating Mode | — | Enhancement |
| Drive Voltage | — | 10 V (standard level) |
| Qualification | — | JEDEC standard qualified |
| Structure | — | Planar cell (wide SOA) |
| Avalanche Testing | — | 100% avalanche energy tested |
| Sourcing | — | Multi-vendor, broad distribution availability |
| Pb-Free / RoHS | — | PBF (Pb-free) suffix |