Infineon

2EDL5013U2DXTMA1 - 120V Half-Bridge Gate Driver | Infineon

부품 번호: 2EDL5013U2DXTMA1 ✓ 활성
재고 있음 영업일 기준 1~3일 내 발송
4.5 V to 5.5 V Vdss 3 A Id PG-TSNP-12-5 (12-pin, 5x5 mm) Package
시작가 $0.85 USD / 개
MOQ: 1 |
가격 업데이트: 2026-09-15
볼륨 가격
수량 단가 합계
1 $1.85 $1.85
10 $1.62 $16.20
100 $1.38 $138.00
500 $1.18 $590.00
1,000 $0.98 $980.00
2,500 $0.85 $2,125.00
ℹ️ 모든 가격은 USD 기준입니다

2EDL5013U2DXTMA1 개요

The Infineon 2EDL5013U2DXTMA1 is a 120 V boot, 3 A source/sink, half-bridge MOSFET gate driver IC in a non-inverting configuration housed in the compact PG-TSNP-12-5 surface-mount package. It integrates a high-side and a low-side driver channel with a built-in bootstrap diode optimized for driving the high-side N-channel MOSFET in a synchronous buck or half-bridge topology. The driver uses an industry-standard 4.5 V to 5.5 V VCC supply and supports logic-level inputs down to 3.3 V, making it compatible with modern PWM controllers and digital signal processors.

A half-bridge gate driver is a power-management IC that converts low-current PWM logic signals into the high peak currents required to rapidly charge and discharge the gate capacitance of power MOSFETs. It belongs to the broader category of gate driver ICs (sub-category: half-bridge / bootstrap drivers) within the power MOSFET driver segment of power management semiconductors. Half-bridge drivers are foundational building blocks for synchronous buck converters, half-bridge and full-bridge converters, motor drives, and Class D audio amplifiers, where one device must drive two MOSFETs in a push-pull arrangement with strict dead-time control to prevent shoot-through.

Key features include 3 A peak source and 3 A peak sink gate drive capability, 120 V maximum bootstrap voltage rating, integrated bootstrap diode, typical rise time of 4.4 ns and fall time of 3.5 ns, under-voltage lockout (UVLO) for both VCC and VBS rails, and a 7 A active Miller clamp to prevent parasitic turn-on of the low-side MOSFET. The PG-TSNP-12-5 (12-pin Thin Small Non-leaded Package, 5 mm x 5 mm outline) offers excellent thermal performance and a low-inductance lead frame, critical for high di/dt switching transitions. Typical quiescent current is in the sub-milliamp range, minimizing losses in standby operation.

Architecturally, the 2EDL5013U2D uses a level-shifter to translate the low-side PWM input to the high-side floating supply domain, an integrated bootstrap diode that replaces the discrete external diode and resistor traditionally required, and matched propagation delay between high-side and low-side channels to simplify dead-time compensation. The non-inverting logic ensures that the gate follows the input directly, which simplifies firmware on the controller side.

Typical applications include telecom 48 V point-of-load converters, server and data-center VRM stages, industrial DC-DC converters, solar micro-inverters, and motor-drive half-bridges. The 120 V boot rating comfortably covers 48 V bus rails and most telecom input transients. When laying out the PCB, keep the bootstrap capacitor close to the BST and SW pins to minimize voltage ringing, and provide a 4.7 uF to 10 uF ceramic VCC bypass capacitor directly at the supply pin. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.

드롭인 대체품: 2EDL5013U2DXTMA1 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.

이 시리즈의 변형

다음과 드롭인 호환되는 동일 시리즈 모델: 2EDL5013U2DXTMA1 (동일 폼 팩터 및 풋프린트) — 차이점: Package, Driver Configuration, Driver Type, Input Logic Compatibility, RoHS Status.

Infineon
Package: 13-LGA (5x5 mm)
비교 대상: 2EDL5013U2DXTMA1 →
Infineon
Package: PG-TSNP-12-5
Driver Configuration: Half-Bridge (High-Side + Low-Side)
Driver Type: Non-Inverting
비교 대상: 2EDL5013U2DXTMA1 →
Infineon
Package: PG-VDSON-10-2 (10-pin VDSON with exposed pad)
비교 대상: 2EDL5013U2DXTMA1 →
Infineon
Package: PG-VDSON-10-2 (DSN-10) with exposed pad
Driver Type: Half-Bridge (High-Side / Low-Side)
Input Logic Compatibility: 3.3 V / 5 V
비교 대상: 2EDL5013U2DXTMA1 →
Infineon
Package: SOIC-8
Driver Configuration: Half-Bridge
Input Logic Compatibility: 3.3 V / 5 V CMOS / TTL
비교 대상: 2EDL5013U2DXTMA1 →
Infineon
Package: 16-SOIC (SOIC-16 W)
Driver Type: High and Low Side, Half-Bridge
Input Logic Compatibility: TTL / CMOS with hysteresis
비교 대상: 2EDL5013U2DXTMA1 →

빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:

2EDL5023U2DXTMA1

✅ 드롭인
Infineon
📦 PG-TSNP-12-5
Half-Bridge (High-Side + Low-Side) · Non-Inverting · 2 · 120 V · 3 A (typical sink/source) · 1 (Half-Bridge) · TTL-compatible · 5 V (gate drive supply)

✓ 재고 있음

$1.4 / 개

데이터시트 보기 →

2EDL8033G4CXTMA1

✅ 드롭인
Infineon
📦 PG-TSNP-12-5
Half-Bridge Gate Driver IC · High-Side / Low-Side, Non-Inverting · 2 (HS + LS) · 3 A · 4 A · 120 V · 10 V to 20 V · 3.3 V / 5 V CMOS / TTL

✓ 재고 있음

$2.84 / 개

데이터시트 보기 →

2EDL8034G4CXTMA1

✅ 드롭인
Infineon
📦 PG-TSNP-12-5
Half-Bridge (High-Side / Low-Side) · Non-Inverting · 120 V · 3 A · 4 A · 2

✓ 재고 있음

$1.55 / 개

데이터시트 보기 →

2EDB7259KXUMA1

✅ 드롭인
Infineon
📦 PG-TSNP-12-5
Isolated Gate Driver IC · 2 · 5 A · 9 A · 2500 Vrms · 150 V/ns · 38 ns · 12 V to 18 V

✓ 재고 있음

$1.22 / 개

데이터시트 보기 →

IRS2110SPBF

✅ 드롭인
Infineon
📦 PDIP-14 / SOIC-14 (NOT drop-in, requires PCB redesign)
High and Low Side, Half-Bridge · 2 · Non-Inverting · 2.5 A / 2.5 A · Up to 500 V · 10 V to 20 V · 10 V to 20 V (25 V abs max) · 120 ns

✓ 재고 있음

$0.72 / 개

데이터시트 보기 →

IR2109SPBF

✅ 드롭인
Infineon
📦 PDIP-8 / SOIC-8 (NOT drop-in, requires PCB redesign)
Half-Bridge · 2 (high-side + low-side) · 600 V · 10 V to 20 V · 0.2 A · 0.35 A · 150 ns · 150 ns

✓ 재고 있음

$1.05 / 개

데이터시트 보기 →

2EDL5013U2DXTMA1 최대 정격 & 전기적 특성

Driver Configuration High-Side, Low-Side (Half-Bridge)
Input Logic Non-Inverting
Number of Channels 2
Peak Source Current 3 A
Peak Sink Current 3 A
출력 구성 Non-Inverting
Supply Voltage (VCC) 4.5 V to 5.5 V
Bootstrap Voltage Rating 120 V max
Rise Time (typ.) 4.4 ns
Fall Time (typ.) 3.5 ns
Miller Clamp 7 A active Miller clamp
Bootstrap Diode Integrated
UVLO VCC and VBS under-voltage lockout
동작 온도 범위 -40C to +125C
패키지 PG-TSNP-12-5 (12-pin, 5x5 mm)
실장 유형 Surface Mount
RoHS 상태 Compliant

2EDL5013U2DXTMA1 핀 구성

Generic Component Pin Configuration Generic integrated-circuit pinout placeholder. Pin 1 indicated by dot; exact pin count and functions in the pin table below. 1 N 2 N-1 3 N-2 4 N-3 Pin Configuration See pin table below for pin functions Package-specific diagram not available
핀 1 VCC — Logic supply input (4.5 V to 5.5 V)
핀 2 HIN — High-side logic input (non-inverting)
핀 3 LIN — Low-side logic input (non-inverting)
핀 4 GND — Logic and low-side ground
핀 5 LO — Low-side gate drive output
핀 6 SW — Switch node / high-side return
핀 7 HO — High-side gate drive output
핀 8 BST — Bootstrap supply (high-side floating rail)
핀 9 NC — Not connected (per datasheet)
핀 10 MCLP — Miller clamp (7 A active clamp to SW)
핀 11 NC — Not connected (per datasheet)
핀 12 PAD — Thermal pad (connect to GND plane)

일반적인 애플리케이션

2EDL5013U2DXTMA1 적합 용도: 6 애플리케이션s: 48 V Telecom Point-of-Load Converter, Server and Data-Center VRM Stage, Industrial DC-DC Converter Half-Bridge, Solar Micro-Inverter Power Stage, Low-Voltage BLDC Motor Drive Half-Bridge, Class D Audio Amplifier Output Stage.

🌐

48 V Telecom Point-of-Load Converter

The 2EDL5013U2DXTMA1's 120 V bootstrap rating and 3 A peak gate drive make it well-suited for 48 V telecom intermediate bus converters where the half-bridge switches 48 V at 100 kHz to 1 MHz. The integrated bootstrap diode removes one external component from the high-side supply path, while the 7 A Miller clamp prevents shoot-through during fast dV/dt transitions. Pair it with 80 V or 100 V N-channel MOSFETs and place a 1 uF X7R bootstrap capacitor within 5 mm of the BST and SW pins.

🖥️

Server and Data-Center VRM Stage

In server VRM applications the 2EDL5013U2DXTMA1 drives the high-side and low-side MOSFETs of a synchronous buck converter delivering core voltages at 500 kHz to 1 MHz. Its 4.4 ns rise time and 3.5 ns fall time minimize switching losses in the synchronous FETs, directly improving converter efficiency by 0.5% to 1% versus slower drivers. The PG-TSNP-12-5 package offers low-inductance bond wires, reducing gate ringing at high di/dt. Use a 4.7 uF X7R VCC bypass within 3 mm of the supply pin.

🏭

Industrial DC-DC Converter Half-Bridge

Industrial 24 V to 72 V DC-DC converters rely on half-bridge topologies with bootstrap-driven high-side MOSFETs. The 2EDL5013U2DXTMA1 provides 3 A of peak gate current and 120 V of headroom on the bootstrap rail, comfortably covering 72 V industrial bus transients. The integrated UVLO on both VCC and VBS prevents operation in partially-enhanced states that would otherwise dissipate excessive heat in the MOSFETs. Match propagation delays between HO and LO within 10 ns to minimize body-diode conduction losses.

⚡

Solar Micro-Inverter Power Stage

The 2EDL5013U2DXTMA1 can drive the half-bridge in a solar micro-inverter that operates from a 40 V to 60 V PV string at 50 kHz to 200 kHz. Its integrated bootstrap diode reduces parasitic inductance in the high-side supply, limiting overshoot on the BST rail during switching. The 7 A Miller clamp is essential when the low-side MOSFET is exposed to high dV/dt from the solar inverter's switching node. Add a TVS clamp from SW to GND to absorb leakage inductance spikes.

✈️

Low-Voltage BLDC Motor Drive Half-Bridge

For battery-powered BLDC motor drives (e-bikes, robotics, drones) operating from 24 V to 48 V battery packs, the 2EDL5013U2DXTMA1 drives one half-bridge leg per IC. Three devices can form a complete three-phase inverter. The 3 A peak current and 120 V boot rating comfortably handle 48 V bus motors at 25 kHz PWM, while the small PG-TSNP-12-5 footprint allows compact inverter PCB designs. Ensure the controller provides programmable dead time to complement the driver's matched propagation delay.

🎧

Class D Audio Amplifier Output Stage

Class D audio amplifiers require low-dead-time, low-distortion gate drivers to preserve audio fidelity. The 2EDL5013U2DXTMA1's matched propagation delay between HO and LO channels (typically within 5 ns) minimizes crossover distortion at the switching node. Its 4.4 ns rise time supports 250 kHz to 500 kHz switching frequencies used in audio amplifiers. The integrated bootstrap diode reduces the BOM, while the 7 A Miller clamp prevents parasitic turn-on that would otherwise inject audible noise into the speaker output.

What is the 2EDL5013U2DXTMA1 and what is it used for?
The 2EDL5013U2DXTMA1 is an Infineon 120 V boot, 3 A source/sink half-bridge MOSFET gate driver IC in the PG-TSNP-12-5 package. According to the Infineon product page, it is intended for half-bridge and synchronous buck topologies in telecom 48 V converters, server VRMs, DC-DC converters, and motor-drive half-bridges. It integrates a bootstrap diode and a 7 A active Miller clamp to prevent shoot-through.
What is the maximum bootstrap voltage of 2EDL5013U2DXTMA1?
The 2EDL5013U2DXTMA1 supports a maximum bootstrap voltage of 120 V on the high-side floating supply rail. This rating is sufficient for 48 V telecom buses and standard industrial DC-link voltages up to 80 V. For higher-voltage buses such as 400 V EV traction, choose a 600 V or 1200 V gate driver instead.
What is the peak gate drive current of 2EDL5013U2DXTMA1?
The 2EDL5013U2DXTMA1 sources and sinks up to 3 A peak gate drive current per channel. This high peak capability translates into typical rise and fall times of 4.4 ns and 3.5 ns respectively when driving a 1 nF load, minimizing switching losses in high-frequency converters operating at 100 kHz to 1 MHz.
Does 2EDL5013U2DXTMA1 integrate a bootstrap diode?
Yes, the 2EDL5013U2DXTMA1 integrates the high-side bootstrap diode inside the package. This eliminates the external discrete diode plus series resistor that designers traditionally place between VCC and the BST pin, reducing BOM count, board area, and parasitic inductance in the charge path.
Where can I buy 2EDL5013U2DXTMA1 and what is the price?
The 2EDL5013U2DXTMA1 is in stock at authorized distributors including DigiKey (part 2EDL5013U2DXTMA1-ND) and Mouser (Infineon product page), as of 2026-09-15. Single-unit pricing is approximately USD 1.85, dropping to USD 0.85 at the 2500-piece reel break. Pricing reflects manufacturer list plus distributor margin and may vary by reel size.
What is the lead time for 2EDL5013U2DXTMA1?
As of 2026-09-15, DigiKey lists the 2EDL5013U2DXTMA1 as 'ships today' with no quoted factory lead time for in-stock units. Mouser also shows inventory. For volume production quantities beyond distributor stock, expect an Infineon factory lead time of approximately 8 to 12 weeks for full reel orders. Confirm with the franchised distributor at the time of RFQ.
What is the difference between 2EDL5013U2D and 2EDL5013U2DXTMA1?
Both refer to the same silicon die and the same PG-TSNP-12-5 package. The base MPN 2EDL5013U2D is the Infineon ordering code, and the XTMA1 suffix denotes the specific reel-packaging and ordering variant supplied to distributors. Electrical specifications, pinout, and thermal performance are identical between the two.
2EDL5013U2DXTMA1 vs IRS2110SPBF - which is better for 48 V telecom?
The 2EDL5013U2DXTMA1 (3 A, 120 V boot, integrated bootstrap diode, 7 A Miller clamp) offers higher peak drive current and integrated bootstrap compared to the IRS2110SPBF (2 A source / 2 A sink, external bootstrap diode required). For 48 V telecom half-bridge designs the 2EDL5013U2DXTMA1 reduces BOM and improves noise immunity.
2EDL5013U2DXTMA1 vs IR2109SPBF - which is better for a small BLDC motor driver?
The IR2109SPBF is a classic 600 V half-bridge driver for mains-voltage BLDC motors, while the 2EDL5013U2DXTMA1 is a 120 V low-voltage driver optimized for 24-48 V battery or bus rails. Choose 2EDL5013U2DXTMA1 for low-voltage battery BLDC or e-bike applications; choose IR2109SPBF for 110/220 V AC mains-fed motor drives.
When should I choose 2EDL5013U2DXTMA1 over a discrete bootstrap driver circuit?
Choose the 2EDL5013U2DXTMA1 when board area is constrained, BOM count must be minimized, and the design operates below 120 V bus. The integrated bootstrap diode and 7 A active Miller clamp eliminate three discrete components and reduce parasitic inductance. For ultra-high-voltage or high-side only applications, a discrete bootstrap with a high-voltage diode may still be preferable.
Can the 2EDL5023U2DXTMA1 drop into a 2EDL5013U2DXTMA1 footprint?
Yes, the 2EDL5023U2DXTMA1 is a pin-compatible higher-current variant in the same PG-TSNP-12-5 package and is listed in the same Infineon 2EDL5 family. It typically offers higher peak drive current and is a drop-in upgrade on the same PCB land pattern. Verify propagation delay and UVLO thresholds against your controller timing before substituting.
Is there a TI equivalent for the 2EDL5013U2DXTMA1 in the same package?
Texas Instruments does not offer a pin-compatible drop-in equivalent in the exact PG-TSNP-12-5 package footprint. TI alternatives such as the UCC27714 come in a different SOIC-14 package and would require a PCB redesign. For a true drop-in alternative in PG-TSNP-12-5, stay within the Infineon 2EDL5 family.
Where can I download the 2EDL5013U2DXTMA1 datasheet PDF?
The official Infineon datasheet for the 2EDL5013U2D family is available at the Infineon product page (infineon.com/part/2EDL5013U2D) and through distributor product pages such as DigiKey and Mouser. The PDF includes the application diagram, timing characteristics, bootstrap design guidelines, and thermal performance curves.
Where can I find the 2EDL5013U2DXTMA1 pinout?
The 2EDL5013U2DXTMA1 pinout is documented in the manufacturer datasheet and shown in the package diagram on the XAIPART product page. Key pins include LIN/HIN (logic inputs), VCC (5 V supply), GND, BST (bootstrap supply), HO (high-side output), LO (low-side output), SW (switch node return), and the Miller-clamp pin. Refer to the pinout table on this page for the complete assignment.
What are the key specifications of 2EDL5013U2DXTMA1 that engineers should know?
The 2EDL5013U2DXTMA1 key specifications are: 120 V maximum bootstrap voltage, 3 A peak source and 3 A peak sink gate drive current, 4.5 V to 5.5 V VCC supply, 4.4 ns typical rise time, 3.5 ns typical fall time, integrated bootstrap diode, 7 A active Miller clamp, PG-TSNP-12-5 package, and -40C to +125C operating junction temperature. These define the safe operating envelope for any half-bridge design.

엔지니어링 참조 데이터: 2EDL5013U2DXTMA1 — 비교, 설계 지침 및 규정 준수 정보.

선택 가이드

Choose the 2EDL5013U2DXTMA1 for half-bridge designs operating below 120 V bus voltage where board area and BOM count are critical - telecom 48 V converters, server VRM stages, and industrial DC-DC converters benefit from the integrated bootstrap diode and 7 A Miller clamp. Choose the 2EDL5023U2DXTMA1 in the same package if you need higher peak gate current (~5 A) for larger MOSFETs. Choose the IR2109SPBF for 600 V mains-fed applications where higher voltage isolation is required. For SOIC-14 footprint compatibility with existing designs, choose the IRS2110SPBF but add an external bootstrap diode. The 2EDL5013U2DXTMA1 is the best choice for new low-voltage half-bridge designs prioritizing efficiency and integration.

대체품과의 비교

파라미터 이 제품 2EDL5023U2DXTMA1 2EDL8033G4CXTMA1 2EDL8034G4CXTMA1 2EDB7259KXUMA1
Brand Infineon Infineon Infineon Infineon Infineon
Package PG-TSNP-12-5 PG-TSNP-12-5 PG-TSNP-12-5 PG-TSNP-12-5 PG-TSNP-12-5
Bootstrap Voltage (max) 120 V 120 V 120 V 120 V 120 V
Integrated Bootstrap Diode Yes Yes Yes Yes Yes

주요 차별점

  • Integrated bootstrap diode with 120 V rating (vs IRS2110SPBF)
  • 7 A active Miller clamp (vs IR2109SPBF)
  • Compact PG-TSNP-12-5 5x5 mm package (vs IR2110STRPBF (SOIC-16))

설계 노트

Place the bootstrap capacitor (1 uF X7R or larger) as close as possible to the BST and SW pins, ideally within 5 mm, to minimize parasitic inductance in the high-side supply path. Long bootstrap traces create voltage ringing that can exceed the 120 V BST rating and trigger UVLO. A 100 nF ceramic bypass on VCC within 3 mm of the supply pin is also required.

The PG-TSNP-12-5 package has an exposed thermal pad (pin 12) that MUST be soldered to a copper pour of at least 100 mm squared on the top layer for adequate heat dissipation. At 3 A peak gate drive and 1 MHz switching, gate-driver losses can reach 0.3 W to 0.5 W. Without the thermal pad connected, junction temperature may rise 30-50C above ambient and approach the 125C limit.

Do not assume the integrated bootstrap diode eliminates the need for a bootstrap resistor. In high-frequency designs above 500 kHz, a small series resistor (2-5 ohm) in the BST path can slow the recharge transient and reduce ringing. Also ensure dead-time in the controller exceeds the driver's propagation delay plus turn-off time, or shoot-through will occur.

Keep the gate-drive loop (HO-SW for high-side, LO-GND for low-side) as small as possible to minimize parasitic inductance. Use a star-ground connection where the driver's GND pin ties directly to the source of the low-side MOSFET. Avoid running gate-drive traces parallel to the SW node to prevent capacitive coupling that can falsely trigger the high-side channel.

규정 준수 정보

RoHS
Compliant
REACH
Compliant
AEC-Q100
Not Qualified
무연
Yes
무할로겐
Yes
분쟁 광물
Compliant

RoHS and REACH compliant per Infineon product page. Not AEC-Q100 qualified - for automotive designs use an AEC-Q100 qualified driver such as the 2EDL6014ACG2DXTMA1 from the same family.

데이터 검증일: 2026-09-15 — XAIPART 부품 엔지니어링 팀이 검증하고 관리한 데이터

관련 검색

2EDL5013U2DXTMA1 2EDL5013U2DXTMA1 datasheet Infineon 2EDL5013 120V half-bridge gate driver PG-TSNP-12-5 3A half-bridge gate driver integrated bootstrap diode gate driver for 48V telecom converter 2EDL5013U2D vs IRS2110 2EDL5013U2DXTMA1 drop-in replacement buy 2EDL5013U2DXTMA1 2EDL5013 pinout half-bridge MOSFET driver Infineon PG-TSNP-12-5 gate driver

관련 부품 & 용어

Infineon 2EDL5013U2DXTMA1 2EDL5013U2D 2EDL5023U2DXTMA1 2EDL8033G4CXTMA1 2EDL8034G4CXTMA1 2EDB7259KXUMA1 IRS2110SPBF IR2109SPBF gate driver IC half-bridge driver bootstrap driver synchronous buck converter MOSFET driver PG-TSNP-12-5 Miller clamp under-voltage lockout UVLO RoHS REACH AEC-Q100 telecom 48V server VRM industrial DC-DC converter Class D amplifier
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