AFV09P350-04GNR3 - 100W 920MHz LDMOS RF Power Transistor | NXP
부품 번호: AFV09P350-04GNR3 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $38.5 | $38.50 |
| 10 | $34.2 | $342.00 |
| 100 | $29.8 | $2,980.00 |
| 500 | $26.4 | $13,200.00 |
| 1,000 | $23.7 | $23,700.00 |
| 3,000 | $21.5 | $64,500.00 |
AFV09P350-04GNR3 개요
An RF power LDMOS transistor is a laterally diffused metal-oxide-semiconductor power device optimized for high-frequency, high-output RF amplification. The LDMOS architecture combines a short channel length with a lightly doped drain drift region, enabling high breakdown voltage, high gain, and excellent thermal stability. Within the power management hierarchy, RF LDMOS transistors sit alongside GaN HEMTs as the workhorse devices for macro-cell base-station PAs; they are tuned for high linearity, gain, and ruggedness under mismatch, making them the dominant technology below 3 GHz.
Key features include a 48 V supply rail typical of macro-cell base stations, 19.5 dB typical gain at 920 MHz that simplifies driver-stage design, 100 W average output power in Doherty service, and a symmetric Doherty pair topology that eliminates the input splitter/output combiner imbalance of conventional asymmetric Doherty designs. The OM-780G-4L ceramic package provides low parasitic inductance, an integrated heat spreader, and an epoxy-sealed flange for direct PCB or heatsink mounting.
The AFV09P350-04GNR3 is built on NXP's AirFast-generation LDMOS process technology, featuring a high-resistivity silicon substrate and a gold-plated metal system that minimizes conduction losses. Symmetric Doherty operation allows main and peaking devices to be biased without an offset, simplifying gate-bias networks and improving back-off efficiency versus legacy asymmetric Doherty designs. The device is rated for continuous-wave (CW) operation as well as pulsed waveforms common in TDD-LTE and 5G NR applications.
Typical applications include 4G LTE and 5G NR macro-cell base-station PAs operating in the cellular 900 MHz band (Band 8), distributed antenna systems, small-cell and integrated radio units, and general-purpose high-power UHF transmitters in the 720-960 MHz range.
When designing with this device, the OM-780G-4L package requires careful thermal management - solder to a copper-clad PCB land pattern with adequate copper pour or attach the ceramic flange to an external heatsink. Input and output matching networks must be optimized for the target sub-band, and proper sequencing of gate bias must be observed to avoid in-rush currents on the 48 V rail.
This page synthesizes distributor pricing, NXP cross-reference alternatives, and practical thermal design guidance not found in the manufacturer datasheet alone.
드롭인 대체품: AFV09P350-04GNR3 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
AFV09P350-04NR3
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
AFV09P350-04GN
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
AFV09P350-04N
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
BLF9G24LS-150P
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
QPD1025
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
AFV09P350-04GNR3 최대 정격 & 전기적 특성
| Manufacturer | NXP Semiconductors |
| Part Number | AFV09P350-04GNR3 |
| Device Type | RF Power LDMOS Transistor |
| 토폴로지 | Symmetric Doherty (single package, two elements) |
| Frequency Range | 720 to 960 MHz |
| Output Power (Average, Doherty) | 100 W |
| Drain Voltage (Vdd) Typ. | 48 V |
| Power Gain (Typ. at 920 MHz) | 19.5 dB |
| Drain Current Idq (Typ.) | 860 mA |
| 패키지 | OM-780G-4L (ceramic, surface mount) |
| Channel Polarity | N-Channel |
| Configuration | Separate, 2 elements (main + peaking pair) |
| Mode of Operation | Enhancement Mode |
| 실장 유형 | Surface Mount |
AFV09P350-04GNR3 om-780g-4l (ceramic, surface mount) 핀 구성 가이드
AFV09P350-04GNR3(om-780g-4l (ceramic, surface mount) 패키지)의 핀 구성입니다. 이 전력 소자는 게이트, 드레인, 소스 단자를 갖추고 있습니다. 비편향 패키지의 경우 정확한 핀 1 방향과 풋프린트 세부 정보는 제조사 데이터시트를 참조하십시오. 일반적인 응용 분야로는 전원 공급 장치 설계, 모터 구동, 부하 스위칭이 있습니다.
다음에 대한 상세 핀아웃 데이터 없음: AFV09P350-04GNR3.
다음을 참조하십시오: 데이터시트 전체 핀 구성은 다음을 참조하십시오.
안전 동작 영역 - LDMOS RF Power Transistor
일반적인 애플리케이션
AFV09P350-04GNR3 적합 용도: 7 애플리케이션s: 4G LTE Band-8 (900 MHz) Macro-Cell Base Station PA, 5G NR (n5/n8) Active Antenna System RF Front-End, Small-Cell and Integrated Radio Unit (IRU) Power Amplifier, UHF Digital TV / Broadcasting Transmitter (720-870 MHz), Industrial / Scientific RF Power Source (900 MHz ISM), Public-Safety / Military UHF Radio Repeater PA, Low-Band 5G Massive-MIMO (Sub-1 GHz) Base Station.
4G LTE Band-8 (900 MHz) Macro-Cell Base Station PA
The AFV09P350-04GNR3 is the workhorse final-stage device for 4G LTE Band-8 (880-915 MHz UL / 925-960 MHz DL) macro-cell base-station power amplifiers. Its 100 W average output at 48 V and 19.5 dB gain at 920 MHz let a Doherty lineup deliver a 4T4R / 8T8R radio's typical 80 W PA in a single Doherty pair, halving device count vs legacy asymmetric Doherty solutions. The 'G' variant's matched gate-decode profile cuts design cycle time by removing the per-device IM3 fine-tuning pass. Power-amplifier efficiency at 8 dB back-off is typically 45-50%, supporting modern LTE spectral-emission masks without extra linearization margin.
추천
5G NR (n5/n8) Active Antenna System RF Front-End
Inside massive-MIMO active antenna system (AAS) arrays, the AFV09P350-04GNR3 drives each RF chain's PA module for 5G NR n5 / n8 (TDD and FDD) deployments in the 700-960 MHz band. The OM-780G-4L surface-mount ceramic package allows automated SMT pick-and-place versus older through-hole RF power transistors, cutting per-module assembly cost by 30-40%. Doherty operation at 8 dB back-off preserves 5G NR system-level efficiency under high PAPR conditions. The 19.5 dB gain budgets for a single front-end driver upstream, allowing AAS modules to stay under 60 mm x 60 mm with full PA + LNA + filter content.
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Small-Cell and Integrated Radio Unit (IRU) Power Amplifier
The 100 W class and 48 V bias of the AFV09P350-04GNR3 are well matched to small-cell, micro-cell, and integrated-radio-unit (IRU) output stages covering the 720-960 MHz cellular band. Its symmetric Doherty topology supports single-ended-to-Doherty conversion that simplifies the radio unit's thermal and supply architecture, while the 19.5 dB gain eliminates an interstage attenuator or extra gain block. The OM-780G-4L package slides into standardized NI-780 land patterns already used in NXP-powered radio units across operator networks. Power-amplifier typical efficiency at full Doherty back-off is around 50%, helping small-cell radios meet stringent PTR (per-transmit-radio) power-bill-of-materials targets without forced-air cooling.
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UHF Digital TV / Broadcasting Transmitter (720-870 MHz)
Beyond cellular, the AFV09P350-04GNR3 serves as a high-power UHF final stage in digital broadcasting transmitters operating in the 720-870 MHz range (DVB-T, ATSC, ISDB-T), where 100 W average, 48 V operation, and 19.5 dB gain fit common UHF exciter-to-PA interface levels. DTV transmitters require low IMD3 across the full OFDM carrier range; the LDMOS architecture and AirFast process technology provide the linearity margin required to meet typical -36 to -40 dBc shoulder distortion targets. The OM-780G-4L package supports both channel-combined final amplifiers and per-amplifier-module blade designs inside a UHF transmitter rack.
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Industrial / Scientific RF Power Source (900 MHz ISM)
The 900 MHz ISM band (902-928 MHz) hosts industrial heating, drying, and materials-processing RF sources that need a 100 W class final amplifier. The AFV09P350-04GNR3's symmetric Doherty topology and 48 V bias suit industrial RF sources where continuous CW or pulsed operation must be reliable at full 100 W output. Typical industrial RF sources use the device's high gain and ruggedness to drive plasma, microwave chemical reactors, or drying systems. The OM-780G-4L ceramic flange accepts direct attachment to an aluminum heatsink; designers typically operate the device in a bias-tee-less CW cascade for predictable thermal behavior.
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Public-Safety / Military UHF Radio Repeater PA
Public-safety UHF repeater and military vehicular-radio infrastructure operates in bands (380-512 MHz, 700-870 MHz) that overlap the 720-960 MHz range of the AFV09P350-04GNR3. The 100 W average, 48 V, 19.5 dB gain suit ruggedized repeater power amplifiers. The ceramic OM-780G-4L package supports thermal management from -40 C to +85 C ambient. Symmetric Doherty behavior delivers high efficiency at varied PAPR, reducing vehicle DC-bus loading on battery-backed repeaters. The LDMOS process technology provides proven reliability for fixed installations running 24/7.
추천
Low-Band 5G Massive-MIMO (Sub-1 GHz) Base Station
The AFV09P350-04GNR3, rated 100 W in 720-960 MHz with 48 V / 19.5 dB gain, fits massive-MIMO sub-1 GHz 5G base-station PAs where high element count drives per-element power and thermal budgets. The 4+ transistors can be combined in a single massive-MIMO radio head delivering 400 W aggregate (e.g., 4x100 W). The LDMOS architecture supports TDD-LTE and 5G NR sub-1 GHz TDD half-duplex operation. The matched-Doherty 'G' gate profile simplifies gate-bias calibration for multi-radio assembly flow.
추천
추천 제품 요약
엔지니어링 참조 데이터: AFV09P350-04GNR3 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | AFV09P350-04NR3 | AFV09P350-04GN | AFV09P350-04N | BLF9G24LS-150P | QPD1025 |
|---|---|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | Ampleon | Qorvo |
| Package | OM-780G-4L | OM-780G-4L | OM-780G-4L | OM-780G-4L | SOT-619-1 (NI-780 flange style) | DFN-6 / NI-780 compatible flange |
| Frequency Range | 720 to 960 MHz | 720 to 960 MHz | 720 to 960 MHz | 720 to 960 MHz | 1800 to 2400 MHz (different band) | 700 to 1000 MHz |
| Output Power (Average) | 100 W | 100 W | 100 W | 100 W | 150 W (higher power, different band) | 100 W |
| Drain Voltage Typ. | 48 V | 48 V | 48 V | 48 V | 28 V | 48 V |
| Power Gain (Typ.) | 19.5 dB at 920 MHz | 19.5 dB at 920 MHz | 19.5 dB at 920 MHz | 19.5 dB at 920 MHz | 17 dB (at 2.4 GHz) | 19 dB at 900 MHz |
| Technology | LDMOS | LDMOS | LDMOS | LDMOS | LDMOS | GaN-on-SiC HEMT |
| Topology | Symmetric Doherty | Symmetric Doherty | Symmetric Doherty | Symmetric Doherty | Doherty (asymmetric, 2-stage device) | Single-ended or Doherty driver |
| Matched Profile | Doherty-matched 'G' gate decode | Standard profile 'N' | Doherty-matched 'G' | Standard 'N' profile (base) | Asymmetric Doherty pre-matched | Discrete (no factory match) |
주요 차별점
- Factory-matched 'G' decode for symmetric Doherty pair layout (vs AFV09P350-04NR3)
- OM-780G-4L surface-mount ceramic package (vs AFV09P350-04GN (legacy through-hole variant))
- Optimized for 720-960 MHz band - true Band-8 / n8 fit (vs BLF9G24LS-150P (1800-2400 MHz))
- Pioneering 48 V / 100 W symmetric Doherty LDMOS (vs QPD1025 (GaN-on-SiC, 100 W))
설계 노트
Estimated: at 100 W CW output and ~55% typical Doherty efficiency, the device dissipates roughly 80 W as heat. Per NXP datasheet, the OM-780G-4L ceramic package has theta-JC approximately 0.18 C/W, so junction-to-case delta is about 14-15 C at full power. Mount the ceramic flange to an aluminum heatsink with thermal-interface material (TIM) rated for at least 200 C, and clamp or solder the flange to a copper-clad PCB land pattern with substantial copper pour. Without adequate heatsinking the junction temperature can exceed 150 C and trigger device de-rating or failure.
OM-780G-4L is a flange-style ceramic package; the land pattern must follow the NI-780 standard (per NXP application note for AirFast DPAK-style devices). Use Rogers RO4350B or RO4003C substrate with minimum 8-mil 0.5-oz cu for the input/output traces. Maintain 50 ohm microstrip or coplanar waveguide with controlled-impedance differential. Gate-bias traces need 2 kV ESD protection, 100 ohm series resistor at gate, and a low-pass filter (10 uF + 100 nF) to prevent bias oscillation; keep loops between gate and drain as short as physically possible to avoid parasitic feedback at 920 MHz.
Place input and output matching networks as close to the OM-780G-4L RF leads as possible (within 1-2 mm) to minimize parasitic inductance. Use multiple 100 nF ceramic bypass capacitors and a 10 uF tantalum/ceramic bulk capacitor at the 48 V drain feed. The PCB should provide a continuous RF ground return around the matching network. For TDD-LTE and 5G NR TDD systems, include an integrated circulator / isolator at the PA output to protect the device from antenna-side mismatches and load-pull effects.
Do not bias the device without proper sequencing: gate must be applied before drain, and drain must be removed before gate. Exceeding Vdd > 50 V can damage the LDMOS die. Never operate the device into a high VSWR load - even momentary antenna faults can cause device blow-out under Doherty operation. Always use a current-limited lab supply for first bring-up. Verify with an integrated circulator that the load VSWR stays below 3:1 in operation.
Symmetric Doherty operation requires precise amplitude and phase balance between main and peaking paths; mismatch greater than 0.5 dB or 5 degrees causes degraded linearity at high PAPR. Use high-Q harmonic-tuned input matching and output networks to maintain the correct impedance presented to each half of the pair. Reference the NXP application notes for Doherty alignment procedures. The 'G' suffix in the part number indicates this device has been factory-matched for use as either main or peaking path without re-binning.
규정 준수 정보
Compliance per NXP product page as of 2026-10-16. AEC-Q100 does not apply (RF power transistor, not automotive ASIC). REACH and RoHS confirmed for OM-780G-4L ceramic package.
