STB9N60M2 - 600V N-Channel Power MOSFET | STMicroelectronics
부품 번호: STB9N60M2 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $1.25 | $1.25 |
| 10 | $1.12 | $11.20 |
| 100 | $0.98 | $98.00 |
| 500 | $0.87 | $435.00 |
| 1,000 | $0.79 | $790.00 |
STB9N60M2 개요
A Power MOSFET is a type of field-effect transistor optimized for switching and amplification in power electronics. It operates by controlling the flow of current through a semiconductor channel using an electric field, allowing for fast switching speeds and low conduction losses. Power MOSFETs are fundamental building blocks in switch-mode power supplies, motor drives, and lighting systems, where they function as electronic switches that efficiently regulate power flow. They are part of the broader family of discrete semiconductors, which also includes diodes, IGBTs, and thyristors.
Key features of the STB9N60M2 include a low gate charge (Qg) of 18 nC, which reduces switching losses and enables high-frequency operation, and a fast body diode with low reverse recovery time, making it suitable for bridge topologies. The device also offers a wide operating junction temperature range from -55°C to +150°C, ensuring reliability in harsh environments. Its avalanche ruggedness is rated at 300 mJ, providing robustness against overvoltage transients.
The MDmesh M2 technology utilizes a vertical structure with a reduced on-resistance and improved switching performance compared to conventional planar MOSFETs. This is achieved through a charge-balanced design that enhances the breakdown voltage capability while maintaining low conduction losses. The STB9N60M2 is optimized for hard-switching applications, where its low gate charge and fast switching times minimize energy losses.
Typical applications include switch-mode power supplies (SMPS), power factor correction (PFC) circuits, LED lighting drivers, and industrial motor control. In an SMPS, the STB9N60M2 acts as the primary switching element, converting AC mains to regulated DC output with high efficiency. Its 600V rating provides ample margin for universal input voltage ranges (85-265V AC), while the low on-resistance reduces conduction losses, improving overall system efficiency.
When designing with this device, ensure proper gate drive voltage (typically 10V) to fully enhance the channel and minimize on-resistance. A gate resistor may be needed to control switching speed and reduce EMI. Adequate heat sinking or PCB copper area is essential to keep the junction temperature within limits, especially at high currents. The D2PAK package offers a low thermal resistance of 62.5°C/W, allowing for efficient heat dissipation.
드롭인 대체품: STB9N60M2 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
STB9N60M2-EP
✅ 드롭인 ⚠️ 사양 미검증📋 참조 대체품 (카탈로그에 없음)
STB9N60M2-EP
✅ 드롭인 ⚠️ 사양 미검증📋 참조 대체품 (카탈로그에 없음)
STB9N60M2 최대 정격 & 전기적 특성
| Polarity | N-Channel |
| Drain-Source Voltage (VDS) | 600 V |
| Continuous Drain Current (ID) at 25°C | 7 A |
| Continuous Drain Current (ID) at 100°C | 4.4 A |
| Pulsed Drain Current (IDM) | 28 A |
| Gate-Source Voltage (VGS) | ±30 V |
| On-Resistance (RDS(on)) typical | 0.55 ohm |
| On-Resistance (RDS(on)) max | 0.65 ohm |
| Total Gate Charge (Qg) | 18 nC |
| Input Capacitance (Ciss) | 560 pF |
| Output Capacitance (Coss) | 45 pF |
| Reverse Transfer Capacitance (Crss) | 2.5 pF |
| Avalanche Energy (EAS) | 300 mJ |
| 동작 접합 온도 | -55°C to +150°C |
| 패키지 | D2PAK (TO-263) |
| 실장 유형 | Surface Mount |
| RoHS 상태 | Compliant |
STB9N60M2 핀 구성
| 핀 1 | Gate (G) — Gate terminal for controlling the MOSFET |
| 핀 2 | Drain (D) — Drain terminal, also connected to the tab |
| 핀 3 | Source (S) — Source terminal |
안전 동작 영역 (DC)
일반적인 애플리케이션
STB9N60M2 적합 용도: 6 애플리케이션s: Switch-Mode Power Supplies (SMPS), Power Factor Correction (PFC), LED Lighting Drivers, Industrial Motor Control, Solar Inverters, Battery Chargers.
Switch-Mode Power Supplies (SMPS)
The STB9N60M2 is ideal for SMPS primary-side switching. Its 600V rating handles universal input (85-265V AC) with margin, and the low on-resistance (0.55 ohm) minimizes conduction losses, improving efficiency. The low gate charge (18 nC) enables fast switching, reducing switching losses at high frequencies. In a typical flyback converter, the MOSFET switches at 100 kHz, and the fast body diode reduces reverse recovery losses. Proper snubber circuits may be needed to manage voltage spikes from transformer leakage inductance.
추천
Power Factor Correction (PFC)
In boost PFC circuits, the STB9N60M2 operates at high switching frequencies (typically 100-200 kHz) to shape the input current waveform. Its low gate charge and fast switching reduce switching losses, while the 600V rating provides headroom for output voltages up to 400V. The avalanche ruggedness (300 mJ) ensures survival during transient overvoltages. A continuous conduction mode (CCM) PFC design with this MOSFET can achieve efficiency above 95%.
추천
LED Lighting Drivers
The STB9N60M2 is used in LED drivers for street lighting and industrial lighting. Its high voltage rating (600V) allows direct connection to rectified AC mains, and the low on-resistance reduces power dissipation, enabling compact designs without large heatsinks. The fast switching supports PWM dimming at high frequencies without audible noise. In a typical buck LED driver, the MOSFET switches at 200 kHz, and the low gate charge simplifies the gate drive circuit.
추천
Industrial Motor Control
In variable frequency drives (VFDs) and servo drives, the STB9N60M2 is used in the inverter stage to drive three-phase motors. Its 600V rating is suitable for 380V AC industrial supplies, and the fast switching reduces losses in PWM operation. The low on-resistance minimizes conduction losses, improving overall drive efficiency. The device's ruggedness against avalanche ensures reliability during motor regenerative braking. Proper gate drive isolation and dead-time control are essential.
추천
Solar Inverters
The STB9N60M2 is used in microinverters and string inverters for DC-AC conversion. Its 600V rating handles the high DC bus voltage from solar panels (up to 500V), and the low on-resistance reduces losses, improving conversion efficiency. The fast switching enables high-frequency operation, reducing the size of magnetic components. In a typical H-bridge inverter, the MOSFETs switch at 20 kHz, and the low gate charge simplifies the gate drive design.
추천
Battery Chargers
In battery chargers for electric vehicles and industrial equipment, the STB9N60M2 is used in the power stage to convert AC to DC. Its 600V rating handles the input voltage, and the low on-resistance reduces losses, improving charging efficiency. The fast switching supports high-frequency operation, reducing charger size. The device's thermal performance in D2PAK package allows for compact designs with adequate PCB copper area.
추천
추천 제품 요약
엔지니어링 참조 데이터: STB9N60M2 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | STB9N60M2-1 | STB9N60M2-EP | IPP60R099CP | FCP7N60 |
|---|---|---|---|---|---|
| Package | D2PAK (TO-263) | TO-220 | D2PAK (TO-263) | TO-220 | TO-220 |
| Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics | Infineon | onsemi |
| Drain-Source Voltage (VDS) | 600 V | 600 V | 600 V | 600 V | 600 V |
| Continuous Drain Current (ID) at 25°C | 7 A | 7 A | 7 A | 7 A | 7 A |
| On-Resistance (RDS(on)) typical | 0.55 ohm | 0.55 ohm | 0.45 ohm | 0.099 ohm | 0.55 ohm |
| Total Gate Charge (Qg) | 18 nC | 18 nC | 15 nC | 20 nC | 18 nC |
| Avalanche Energy (EAS) | 300 mJ | 300 mJ | 350 mJ | 250 mJ | 300 mJ |
| Operating Junction Temperature | -55°C to +150°C | -55°C to +150°C | -55°C to +150°C | -55°C to +150°C | -55°C to +150°C |
주요 차별점
- Low on-resistance (0.55 ohm) reduces conduction losses (vs IPP60R099CP)
- High avalanche energy (300 mJ) ensures robustness (vs FCP7N60)
- D2PAK package for surface-mount assembly (vs STB9N60M2-1)
설계 노트
The D2PAK package has a junction-to-ambient thermal resistance of 62.5°C/W. At 7A and 0.55 ohm, power dissipation is approximately 27W, which would cause a temperature rise of 1687°C without a heatsink. Therefore, a heatsink or large copper area is mandatory for continuous operation at high currents. For example, at 3A, dissipation is 5W, requiring a heatsink with thermal resistance below 20°C/W to keep junction temperature below 150°C at 25°C ambient.
Place the gate drive circuit close to the MOSFET to minimize parasitic inductance. Use a gate resistor (typically 10-100 ohm) to control switching speed and reduce EMI. Ensure the source pin has a low-inductance path to the controller ground. For high-frequency operation, use a Kelvin source connection if available to reduce gate drive loop inductance.
Do not exceed the maximum gate-source voltage of ±30V. Use a zener diode or TVS for gate protection if the gate drive can overshoot. Also, ensure the drain-source voltage does not exceed 600V, especially during switching transients. An RC snubber across the drain-source may be needed to limit voltage spikes in inductive load switching.
규정 준수 정보
RoHS compliant per STMicroelectronics. AEC-Q100 not applicable for discrete MOSFETs. Lead-free finish.