ATP114-TL-H - 60V 55A P-Channel MOSFET ATPAK | onsemi
부품 번호: ATP114-TL-H ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $1.12 | $1.12 |
| 10 | $0.98 | $9.80 |
| 100 | $0.85 | $85.00 |
| 500 | $0.74 | $370.00 |
| 1,000 | $0.65 | $650.00 |
| 3,000 | $0.55 | $1,650.00 |
ATP114-TL-H 개요
A P-Channel Power MOSFET is a type of field-effect transistor (FET) in which the channel is formed by p-type semiconductor material, and the device is turned on by applying a negative gate-to-source voltage. P-channel MOSFETs sit in the same hierarchy as N-channel MOSFETs under the parent family of power MOSFETs, which themselves belong to the broader category of discrete semiconductors used for power switching. Because the drain is at the lower potential and the source is at the higher potential (opposite of N-channel), a P-channel device enables low-side gate drive referenced to ground — eliminating the need for a bootstrap or charge pump circuit in high-side switching topologies.
The ATP114-TL-H delivers a typical R_DS(on) of 16 mOhm at VGS = -10V, providing low conduction loss and high efficiency when used as a high-side switch in 12V automotive and industrial systems. Its ATPAK package offers a robust mechanical form factor with a drain-tab connection on top, suitable for surface-mount manufacturing. The device is qualified for switching applications with a focus on minimizing switching losses through fast rise and fall times.
Internally, the ATP114 uses a vertical DMOS structure with a p-channel inversion layer, leveraging onsemi's standard silicon MOSFET process technology. The device exhibits low gate charge for fast switching transitions and low on-resistance for minimal conduction loss, making it suitable for high-frequency PWM applications such as synchronous rectification in buck topologies.
Typical applications include automotive load switching (lamps, solenoids, motors), DC-DC converter high-side switches, battery protection circuits, power OR-ing, and general-purpose industrial switching. The P-channel topology simplifies the gate drive circuit when switching a positive rail because the gate is referenced to the source (system positive rail).
When designing with the ATP114-TL-H, ensure adequate copper-area heat dissipation because the ATPAK package relies primarily on the PCB drain tab for thermal relief. For high-current applications, use wide PCB traces or multiple vias to the drain pad. Note that since this is a MOSFET, the part should not be used in the vicinity of highly charged objects, per the manufacturer datasheet warning.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone, giving engineers a single decision-ready reference for the ATP114-TL-H.
드롭인 대체품: ATP114-TL-H — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
ATP114-TL
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
ATP112-TL-H
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
TP11
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
ATP114-TL-H 최대 정격 & 전기적 특성
| Manufacturer | onsemi (formerly ON Semiconductor) |
| Part Number | ATP114-TL-H |
| FET Type | P-Channel |
| Drain-to-Source Voltage (VDS) | -60 V |
| Continuous Drain Current (ID) | -55 A (Ta) |
| Power Dissipation (PD) | 60 W (Tc) |
| RDS(on) (typ) | 16 mOhm at VGS = -10 V |
| 패키지 | ATPAK (Single Gauge) / DPAK-style |
| 실장 유형 | Surface Mount |
| RoHS 상태 | Compliant |
| 할로겐 프리 | Yes (per FindIC description) |
| Application | General-Purpose Switching Device |
| Packaging | Tape & Reel, 3000 per reel |
ATP114-TL-H 핀 구성
| 핀 1 | Gate — Gate control input (driven negative relative to Source to turn on) |
| 핀 2 | Drain — Drain connection (also tied to the top metal tab) |
| 핀 3 | Source — Source connection (positive rail reference for P-channel) |
| 핀 TAB | Drain (Tab) — Top metal tab — electrically connected to Drain (pin 2); primary heat dissipation surface |
안전 동작 영역 (DC)
일반적인 애플리케이션
ATP114-TL-H 적합 용도: 6 애플리케이션s: Automotive 12V High-Side Load Switch, DC-DC Converter High-Side Switch, Battery Protection / Reverse Polarity Switch, Power OR-ing / Redundant Supply Switch, Motor Drive / Solenoid Switch, Hot-Swap / Inrush Current Limiter.
Automotive 12V High-Side Load Switch
The ATP114-TL-H's P-channel configuration enables direct ground-referenced gate drive for 12 V automotive high-side switching without bootstrap circuits. Its -60 V VDS rating provides 5x margin over the 12 V nominal bus, easily absorbing load-dump transients up to 40 V, while the 16 mOhm R_DS(on) at VGS = -10 V keeps conduction loss below 0.5 W per ampere of switched load. Compared to an N-channel high-side switch, this part eliminates the charge pump or bootstrap diode network, reducing BOM cost and PCB area by approximately 30 percent.
추천
DC-DC Converter High-Side Switch
In buck converter high-side positions, the ATP114-TL-H's P-channel topology replaces an N-channel MOSFET plus bootstrap circuit with a single ground-referenced switch. Its -60 V rating covers 24 V industrial input rails with margin, and the 16 mOhm R_DS(on) keeps high-side conduction loss low at -10 V VGS drive. The ATPAK package provides a robust drain connection suitable for continuous high-current switching above 20 A in synchronous buck topologies.
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Battery Protection / Reverse Polarity Switch
The ATP114-TL-H is well-suited as a reverse-polarity protection switch in battery-powered equipment up to 24 V systems. Its P-channel source-connected-to-load topology automatically disconnects the load when VGS goes to zero, providing fail-safe behavior. The -60 V VDS rating easily handles multi-cell lithium packs up to 20 V nominal, while the 55 A continuous current rating covers high-discharge applications like power tools and e-bikes.
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Power OR-ing / Redundant Supply Switch
In redundant power supply OR-ing applications, the ATP114-TL-H's P-channel topology with source-to-load connection blocks reverse current flow when one supply fails. The -60 V rating supports 48 V telecom OR-ing configurations, and the 16 mOhm R_DS(on) minimizes voltage drop across the switch. Two ATP114-TL-H devices in parallel with opposing diodes provide low-loss OR-ing for server and telecom redundant 48 V rails.
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Motor Drive / Solenoid Switch
The ATP114-TL-H's -55 A continuous drain current and 60 W power dissipation rating make it suitable for switching DC motors, solenoids, and relay coils in industrial and automotive systems. The P-channel high-side configuration simplifies the gate drive when controlling inductive loads on the positive rail. Add a TVS diode or flyback clamp across the load to handle inductive kickback within the -60 V VDS rating.
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Hot-Swap / Inrush Current Limiter
The ATP114-TL-H can serve as a hot-swap insertion switch for -48 V telecom or -24 V industrial boards. Using its P-channel high-side configuration with controlled gate ramp-up via RC network, the part acts as an inrush limiter protecting downstream bulk capacitors from charging transients. The -60 V VDS rating and 55 A continuous current support hot-swap of high-power line cards and blade servers.
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추천 제품 요약
엔지니어링 참조 데이터: ATP114-TL-H — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | ATP114-TL | ATP112-TL-H | TP11 |
|---|---|---|---|---|
| Brand | onsemi | onsemi | onsemi | Sanyo Semiconductor |
| Package | ATPAK (Single Gauge) | ATPAK (Single Gauge) - same | ATPAK (Single Gauge) - same | ATPAK-3 - same |
| FET Type | P-Channel | P-Channel | P-Channel | P-Channel |
| Drain-to-Source Voltage (VDS) | -60 V | -60 V | -60 V | -60 V |
| Continuous Drain Current (ID) | -55 A (Ta) | -55 A (Ta) | -30 A (Ta) | -25 A |
| RDS(on) (typ) | 16 mOhm at VGS = -10 V | 16 mOhm at VGS = -10 V | approx. 30 mOhm (higher) | 43 mOhm |
| Halogen Free | Yes | Per onsemi | Yes | Yes (HALOGEN FREE) |
주요 차별점
- Highest continuous drain current in the ATPAK P-channel family (vs ATP112-TL-H)
- Lower R_DS(on) versus competing ATPAK P-channel devices (vs TP11)
- P-channel high-side topology simplifies gate drive (vs N-channel high-side MOSFETs (e.g., STP10NK70Z))
설계 노트
The ATPAK package relies primarily on the top metal drain tab for heat dissipation. At -55 A continuous current and 60 W power dissipation (Tc), the junction-to-case thermal resistance theta_JC must be paired with substantial PCB copper area or an external heatsink attached to the drain tab. Estimated: with 1 square inch of top-side copper pour and no heatsink, expect theta_JA in the 35-45 C/W range, supporting about 2.5 W continuous dissipation in still air. For full -55 A operation, mount a heatsink or use a larger copper pad plus thermal vias to inner layers.
Place the ATP114-TL-H drain tab on a footprint that maximizes top-side copper pour, since the tab is electrically hot (drain). Use multiple thermal vias under the tab to inner-plane copper to spread heat. Keep gate traces short (<10 mm) to minimize gate-drive inductance and ringing; add a 10-100 ohm gate resistor to dampen oscillation. Source should connect to the positive rail (system V+) for P-channel high-side switching.
Per the onsemi ATP114 datasheet, never use this MOSFET in the vicinity of highly charged objects — static discharge can exceed VGS ratings and permanently damage the gate oxide. Also confirm VGS drive polarity and magnitude: P-channel enhancement mode requires VGS below the threshold (typically -2 to -4 V) to turn on, with -10 V being the datasheet R_DS(on) test condition. Driving the gate positive (above +20 V) will destroy the device.
Use wide PCB traces for drain and source — at -55 A continuous, even 16 mOhm R_DS(on) dissipates about 49 W if the part is operating at full current with a fault. Standard 1 oz copper at 5 mm trace width carries only about 3-4 A continuously without significant temperature rise; for -55 A operation, use polygon pours or bus bars. Add a TVS clamp or snubber across inductive loads to keep VDS within the -60 V rating during switch-off transients.
규정 준수 정보
Halogen-free status per FindIC description. RoHS compliance standard for onsemi ATPAK family. AEC-Q100 not explicitly listed in verified web data — confirm with onsemi automotive-grade catalog if required.
