BUK7Y2R0-40H - 40V, 2.0mΩ N-Channel MOSFET LFPAK56 | Nexperia
부품 번호: BUK7Y2R0-40H ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.62 | $16.20 |
| 100 | $1.38 | $138.00 |
| 500 | $1.18 | $590.00 |
| 1,000 | $1.02 | $1,020.00 |
| 3,000 | $0.88 | $2,640.00 |
BUK7Y2R0-40H 개요
What is an N-channel power MOSFET? An N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch that conducts current between drain and source when a positive gate-source voltage is applied. Power MOSFETs sit within the broader category of discrete semiconductors, then field-effect transistors, then power transistors, and are the workhorse switches in DC-DC converters, motor drivers, and load management. The LFPAK56 package is a low-profile, clip-bonded surface-mount package optimized for high-current, low-thermal-resistance applications.
Key features of the BUK7Y2R0-40H include a typical RDS(on) of just 2.0 mΩ at VGS = 10 V, an avalanche-rated single-pulse drain current, and a maximum junction temperature of 175°C suitable for automotive under-hood environments. Trench 9 superjunction geometry delivers an excellent figure-of-merit (FOM = RDS(on) × QG), minimizing both conduction and switching losses.
Technically, the device uses a strip-cell Trench 9 layout that drastically reduces cell pitch while maintaining low gate charge (QG) and output capacitance (Coss). The copper-clip LFPAK56 bond replaces wire bonds, lowering source inductance and improving thermal performance (Rth(j-mb) typically around 0.9°C/W). The standard-level gate threshold (VGS(th) ~2-3 V) means it can be driven directly from logic-level signals at VGS = 4.5 V, simplifying gate driver design.
Typical applications for the BUK7Y2R0-40H include 12 V automotive load switching, electric power steering (EPS), braking and chassis systems, body control modules, and high-current DC-DC converter primary-side switches. Its AEC-Q101 qualification makes it a fit for safety-relevant automotive electronics where reliability under thermal stress is mandatory.
Designers should pay attention to gate-drive voltage: 10 V VGS gives the lowest RDS(on), but logic-level 4.5 V operation is acceptable at the cost of slightly higher on-resistance. SOA verification is essential for linear-mode or in-rush applications.
This page synthesizes distributor pricing, drop-in alternatives, AEC-Q101 qualification details, and practical LFPAK56 PCB layout notes that are not consolidated on the Nexperia product page alone.
드롭인 대체품: BUK7Y2R0-40H — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
BUK7Y2R0-40H,115
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
BUK7Y2R0-40H/VB
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
BUK7Y2R5-40H
✅ 드롭인 ⚠️ 사양 미검증📋 참조 대체품 (카탈로그에 없음)
BUK9Y2R0-40H
✅ 드롭인 ⚠️ 사양 미검증📋 참조 대체품 (카탈로그에 없음)
BUK7Y2R0-40H-VB
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
BUK7Y2R0-40H 최대 정격 & 전기적 특성
| FET Type | N-Channel |
| Technology | Trench 9 superjunction |
| Drain-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID) at TC=25°C | 120 A |
| On-Resistance RDS(on) max at VGS=10V | 2.5 mΩ |
| On-Resistance RDS(on) typ at VGS=10V | 2.0 mΩ |
| Gate Threshold Voltage VGS(th) typ | 2.5 V |
| 동작 온도 범위 | -55°C to +175°C |
| Maximum Junction Temperature | 175°C |
| 패키지 | LFPAK56 (SOT-669) |
| 실장 유형 | Surface Mount |
| 핀 수 | 4 (Gate, Drain tab, Drain tab, Source) |
| Automotive Qualification | AEC-Q101 qualified |
| MSL 레벨 | 1 (unlimited) |
| RoHS 상태 | Compliant |
BUK7Y2R0-40H 핀 구성
| 핀 1 | Gate (G) — Gate control input; drive with 4.5 V to 10 V relative to source |
| 핀 2 | Drain (D) — Drain terminal; internally bonded to thermal pad and case |
| 핀 3 | Drain (D) — Drain terminal; internally bonded to thermal pad and case |
| 핀 4 | Source (S) — Source terminal and Kelvin reference for gate drive |
안전 동작 영역 (DC, TC=25°C)
일반적인 애플리케이션
BUK7Y2R0-40H 적합 용도: 6 애플리케이션s: 12V Automotive Load Switching, Electric Power Steering (EPS) Motor Drive, Brake-by-Wire Actuator Switch, 48V Mild-Hybrid DC-DC Converter Primary Switch, Industrial 24V Solenoid and Valve Drivers, Hot-Swap and OR-ing Applications in Server / Telecom 12V Rails.
12V Automotive Load Switching
The BUK7Y2R0-40H is ideal for high-current 12 V automotive load switching in body control modules and power distribution boxes. Its 40 V VDS rating comfortably exceeds 12 V bus load-dump transients (which can reach ~35 V), while the 2.0 mΩ RDS(on) minimizes conduction losses and voltage drop across the switch. The 120 A continuous current rating supports headroom for inrush on capacitive and incandescent loads. AEC-Q101 qualification and 175°C maximum junction temperature let designers place the part near hot under-hood sources without derating concerns. Use a 10 V gate drive for lowest RDS(on), or 4.5 V for direct logic-level microcontroller control. Compared to using multiple smaller MOSFETs in parallel, a single BUK7Y2R0-40H simplifies the BOM and improves reliability by eliminating parallel-device current-sharing issues.
추천
Electric Power Steering (EPS) Motor Drive
In EPS systems, the BUK7Y2R0-40H serves as the primary switching element in the H-bridge or three-phase inverter driving the steering assist motor. The Trench 9 superjunction architecture delivers an excellent figure-of-merit (RDS(on) × QG), which minimizes switching losses at the high PWM frequencies (20-50 kHz) typical of EPS drives. The LFPAK56's low thermal resistance (Rth(j-mb) ~0.9°C/W, copper-clip construction) keeps the die cool even at sustained high current, extending lifetime. AEC-Q101 qualification is essential because EPS is a safety-relevant function - the part must survive thousands of thermal cycles and remain reliable for the vehicle lifetime. Low source inductance from the clip-bonded package reduces voltage overshoot during switching, easing snubber design. For redundancy, two BUK7Y2R0-40H parts in parallel can deliver >200 A capability.
추천
Brake-by-Wire Actuator Switch
Brake-by-wire systems require MOSFETs that combine very low on-resistance for high-current motor control with proven automotive reliability. The BUK7Y2R0-40H fits this role: 2.0 mΩ RDS(on) limits I²R losses when driving the electromechanical brake booster, while AEC-Q101 qualification and 175°C junction temperature ensure compliance with ISO 26262 functional-safety requirements. The LFPAK56 package's small footprint allows placement close to the actuator for short loop areas, minimizing parasitic inductance that could cause voltage transients during hard switching. Designers typically pair this MOSFET with an isolated gate driver and redundant current-sense path. Because brake-by-wire is a safety-critical application, design margin should include continuous current monitoring and overtemperature protection using the NTC that some LFPAK56 variants expose, or via an external thermistor on the copper pour.
추천
48V Mild-Hybrid DC-DC Converter Primary Switch
In 48 V mild-hybrid vehicles, the BUK7Y2R0-40H is used as the primary-side low-voltage switch on the 12 V or 48 V side of bidirectional DC-DC converters linking the 48 V battery to the 12 V bus. While its 40 V VDS limits it to the low-voltage rail, the 2.0 mΩ RDS(on) reduces conduction losses at the high currents (often >100 A) that flow through these converters during cranking assist or regenerative charging. The Trench 9 superjunction technology gives low QG and Coss, supporting efficient switching at 100-200 kHz and enabling compact magnetics. AEC-Q101 qualification and automotive-grade reliability are critical, as these converters sit in the engine bay and must operate for the vehicle's lifetime at elevated ambient temperatures.
추천
Industrial 24V Solenoid and Valve Drivers
Beyond automotive, the BUK7Y2R0-40H suits industrial 24 V solenoid and hydraulic valve drivers in factory automation. The 40 V rating covers 24 V nominal bus with substantial transient headroom, and the 2.0 mΩ RDS(on) allows sustained high current without excessive heat. The clip-bonded LFPAK56 package offers mechanical robustness on industrial PCBs subject to vibration. For proportional solenoid control where the MOSFET operates in linear mode, designers must verify the safe operating area (SOA) carefully - the datasheet SOA curve is the definitive reference. The standard-level gate threshold means the part can be driven directly from a 24 V industrial logic level with a simple gate resistor and Zener clamp, eliminating the need for a dedicated gate driver IC.
추천
Hot-Swap and OR-ing Applications in Server / Telecom 12V Rails
The BUK7Y2R0-40H works as a low-loss OR-ing MOSFET in redundant 12 V server or telecom power architectures, where its 2.0 mΩ RDS(on) keeps forward voltage drop and conduction loss minimal at high currents. AEC-Q101 reliability, while automotive-targeted, also benefits datacenter hardware by providing stringent qualification evidence. In hot-swap controllers, the part's high peak current capability handles inrush into large bulk capacitors on the backplane; designers must check the SOA at the relevant pulse duration (typically 1-100 ms). The standard-level gate drive simplifies controller interface, and the small LFPAK56 footprint enables high-density board designs. When used as an OR-ing switch, body-diode reverse recovery is also a relevant parameter - the superjunction technology gives good softness, reducing switching transients.
추천
추천 제품 요약
엔지니어링 참조 데이터: BUK7Y2R0-40H — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | BUK7Y2R0-40H,115 | BUK7Y2R0-40H/VB | BUK7Y2R5-40H | BUK9Y2R0-40H | BUK7Y2R0-40H-VB |
|---|---|---|---|---|---|---|
| Brand | Nexperia | Nexperia | Nexperia | Nexperia | Nexperia | VBsemi Elec |
| Package | LFPAK56 (SOT-669) | LFPAK56 (SOT-669) - same | LFPAK56 (SOT-669) - same | LFPAK56 (SOT-669) - same | LFPAK56 (SOT-669) - same | LFPAK56 (SOT-669) - same |
| Drain-Source Voltage (VDS) | 40 V | 40 V | 40 V | 40 V | 40 V | 40 V |
| RDS(on) typ at VGS=10V | 2.0 mΩ | 2.0 mΩ | 2.0 mΩ | 2.5 mΩ | 2.0 mΩ | 2.0 mΩ (per VBsemi datasheet) |
| AEC-Q101 Qualified | Yes | Yes | Yes | Yes | Yes | No (VBsemi commercial grade) |
| Technology | Trench 9 superjunction | Trench 9 superjunction | Trench 9 superjunction | Trench 9 superjunction | Trench 9 superjunction | Trench (VBsemi process) |
주요 차별점
- Lowest-in-class 2.0 mΩ RDS(on) in LFPAK56 for 40 V rating (vs BUK7Y2R5-40H)
- AEC-Q101 qualification ensures automotive reliability (vs BUK7Y2R0-40H-VB (VBsemi clone))
- Trench 9 superjunction technology optimizes switching FOM (vs BUK7S2R0-40H (LFPAK88))
설계 노트
Estimated: at 12 V input, 1 A continuous load through a 2.0 mΩ RDS(on) MOSFET, conduction loss is I² × R = 2 mW, negligible. However, at the part's rated 120 A continuous drain current, dissipation reaches ~29 W; the LFPAK56's copper-clip thermal pad and PCB copper pour become the primary heat path. The datasheet Rth(j-mb) of ~0.9°C/W means each 10 W of dissipation adds ~9°C to the junction. For high-current designs, use a minimum 1 oz copper pour of at least 1 square inch on the drain tab footprint, and consider thermal vias to inner copper planes. Sustained operation above 100 A without adequate cooling will trigger thermal shutdown above 175°C.
LFPAK56 PCB layout is critical for both electrical and thermal performance. The drain tab is also the thermal pad and must be soldered to a copper pour that is on the top layer and stitched with thermal vias (typically 0.3 mm drill, 0.5 mm pitch, filled or capped) to inner copper planes. The gate trace should be kept short and routed away from the drain switching node to minimize dv/dt-induced turn-on. Use a gate series resistor of 10-47 Ω to damp ringing; pair with a 10 kΩ pull-down from gate to source to keep the MOSFET off during controller power-up. Avoid placing the source pad on a long thin trace - source inductance directly degrades switching performance.
Place the BUK7Y2R0-40H as close as possible to the load it switches to minimize the high-current loop area. The switching current loop (input cap → drain → source → input cap ground) should be minimized to reduce parasitic inductance and voltage overshoot. Use wide copper pours or multiple vias for the source and drain connections; the gate loop area (gate driver → gate resistor → gate → source → gate driver ground) should be small and ideally located over a quiet ground plane separate from the power switching loop. For high-side applications, a bootstrap or charge-pump supply is required because the source floats up with the switching node.
Common pitfalls include: (1) Driving the gate with insufficient voltage - at VGS=4.5V the RDS(on) is roughly 2-3× higher than at 10V, dramatically increasing conduction loss. (2) Exceeding the SOA in linear-mode operation (e.g., during inrush or short-circuit) - consult the datasheet SOA curves. (3) Forgetting the body diode reverse recovery in half-bridge topologies; the superjunction body diode is robust but switching loss still occurs. (4) Using a single-layer PCB without thermal vias - the LFPAK56 cannot dissipate its rated power without a proper thermal land. (5) Not adding a TVS or transient suppressor on the drain for automotive load-dump protection beyond 40 V.
규정 준수 정보
AEC-Q101 qualified per Nexperia product page (automotive grade, distinct from AEC-Q100 IC qualification). RoHS and REACH compliant per the manufacturer datasheet. Halogen-free per Nexperia green-product policy.
