EP3SE110F1152I3N - Stratix III E FPGA, 107K LE, 1152-FCBGA | Altera
부품 번호: EP3SE110F1152I3N ⚠ 최종 구매| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $5015.64 | $5,015.64 |
| 5 | $4780 | $23,900.00 |
| 10 | $4520 | $45,200.00 |
| 25 | $4250 | $106,250.00 |
| 100 | $3980 | $398,000.00 |
EP3SE110F1152I3N 개요
A Field Programmable Gate Array (FPGA) is a reprogrammable semiconductor device whose logic fabric, interconnect and I/O can be configured by the end user to implement custom digital circuits, soft processors, DSP pipelines and high-speed serial interfaces. FPGAs sit at the highest level of the programmable-logic taxonomy: programmable logic device (PLD) -> complex programmable logic device (CPLD) -> FPGA -> SoC FPGA. They are preferred over ASICs for low-volume, high-complexity designs and over microcontrollers for parallel, deterministic, low-latency DSP and signal-processing workloads. The Stratix III E family specifically belongs to the high-performance, memory- and multiplier-rich branch of that hierarchy.
Key features include 107,500 logic elements, 8,936,448 RAM bits, 744 user I/Os, 4300 Logic Array Blocks (LABs) per the Mouser listing, a core voltage of 1.1 V, and an industrial operating temperature range (-40C to +100C for the I3 speed grade). The I3N suffix denotes industrial temperature, fast -3 speed grade, lead-free packaging. The device is built on a TSMC 65 nm process and supports up to 12.5 Gbps transceivers in some Stratix III variants, modular I/O banks for vertical migration, output delay and current strength control.
Architecturally, Stratix III E uses Altera's adaptive logic module (ALM), which doubles the effective logic capacity per area versus prior generations, and integrates dedicated DSP blocks (multipliers + adders), M9K/M144K memory blocks, PLLs and a configuration controller. Package and die enhancements include dynamic on-chip termination, programmable output delay and current strength control - features that deliver best-in-class signal integrity at high toggle rates.
Typical applications include high-end ASIC prototyping, wireless baseband DSP, military radar processing, high-performance computing (HPC) acceleration, software-defined radio (SDR), video broadcast infrastructure, and medical imaging front-ends. The high logic and memory density also suit ASIC emulation and design-for-test (DFT) platforms.
When designing with this device, ensure the PCB has a 35 x 35 mm FCBGA footprint with controlled-impedance escape routing, adequate power-rail decoupling for the 1.1 V core and 2.5 V/3.3 V auxiliary supplies, and a JTAG header for Quartus II programming. Heed the Stratix III Device Handbook pinout guidelines for proper bank-by-bank VCCIO grouping.
This page synthesizes real distributor pricing from DigiKey and Mouser, same-brand Altera Stratix III E drop-in variants, and practical design notes not found in the manufacturer datasheet alone.
드롭인 대체품: EP3SE110F1152I3N — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: EP3SE110F1152I3N (동일 폼 팩터 및 풋프린트) — 차이점: Operating Temperature, Speed Grade, Process Technology, Family, Package.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
EP3SE110F1152I3
✅ 드롭인✓ 재고 있음
$4150 / 개
데이터시트 보기 →EP3SE110F1152I2N
✅ 드롭인✓ 재고 있음
$1480 / 개
데이터시트 보기 →EP3SE110F1152C4N
✅ 드롭인✓ 재고 있음
$1395 / 개
데이터시트 보기 →EP3SE110F1152C4LN
✅ 드롭인✓ 재고 있음
$3510 / 개
데이터시트 보기 →EP3SE110F1152C4L
✅ 드롭인✓ 재고 있음
$3372.13 / 개
데이터시트 보기 →EP3SE110F1152C4
✅ 드롭인✓ 재고 있음
$2200 / 개
데이터시트 보기 →EP3SE110F1152C3N
✅ 드롭인✓ 재고 있음
$1560 / 개
데이터시트 보기 →EP3SE110F1152C3
✅ 드롭인✓ 재고 있음
$3200 / 개
데이터시트 보기 →EP3SE110F1152I3N 최대 정격 & 전기적 특성
| Series | Stratix III E |
| Family | Stratix III E FPGA |
| Manufacturer | Altera (now Intel PSG) |
| Logic Elements (LE) | 107,500 |
| Total RAM Bits | 8,936,448 |
| Maximum User I/Os | 744 |
| Logic Array Blocks (LABs) | 4300 |
| Number of I/O Banks | Modular I/O banks (see Stratix III Device Handbook) |
| Core Voltage | 1.1 V |
| Process Technology | 65 nm CMOS |
| 동작 온도 범위 | -40C to +100C (industrial, I3 grade) |
| Speed Grade | -3 (I3 fast grade, industrial) |
| 패키지 | 1152-ball FC-FBGA (Flip-Chip Fine-pitch BGA) |
| 실장 유형 | Surface Mount |
| Lead-Free / RoHS | Lead-free (N suffix); RoHS compliance status: see Stratix III Device Handbook |
| Configuration | JTAG via Quartus II; supports AS, PS, JTAG, FPP modes |
| Internal Supply Voltage (Max) | 0.94 V (per Partstack listing) |
EP3SE110F1152I3N 1152-ball fc-fbga (flip-chip fine-pitch bga) 핀 구성 가이드
EP3SE110F1152I3N(1152-ball fc-fbga (flip-chip fine-pitch bga) 패키지)의 핀 구성입니다. 이 디지털 IC에는 GPIO, 통신 인터페이스(UART, SPI, I2C), 전원 핀이 포함되어 있습니다. 대체 핀 기능과 구성 옵션은 제조사 데이터시트를 참조하십시오. 임베디드 시스템 설계와 PCB 레이아웃에 필수적입니다.
다음에 대한 상세 핀아웃 데이터 없음: EP3SE110F1152I3N.
다음을 참조하십시오: 데이터시트 전체 핀 구성은 다음을 참조하십시오.
일반적인 애플리케이션
EP3SE110F1152I3N 적합 용도: 6 애플리케이션s: High-Performance ASIC Prototyping, Wireless Baseband DSP, Military Radar Signal Processing, Software-Defined Radio (SDR) Platforms, Medical Imaging Front-Ends (Ultrasound / CT), Video Broadcast Infrastructure.
High-Performance ASIC Prototyping
The EP3SE110F1152I3N's 107,500 logic elements and 8,936,448 bits of embedded memory let it absorb full ASIC RTL partitions for functional verification before tape-out. Its 744 user I/Os support high-pin-count ASIC emulations across PCIe, DDR2/3 and SerDes channels. Placed on a prototyping PCB with the Quartus II TimeQuest fitter, it typically reaches 200-300 MHz on pipelined designs - close to silicon speed - and the I3 industrial temperature grade allows lab-to-handoff testing without thermal derating.
추천
Wireless Baseband DSP
With up to 896 18x18 multipliers and dedicated DSP blocks, the EP3SE110F1152I3N is well-suited for 3G/4G baseband channel cards and LTE PHY-layer processing. The high multiplier count and 8.9 Mbit block RAM allow implementation of 256-point FFTs, channel equalizers and turbo-decoder paths in a single device. The 12.5 Gbps-capable transceivers (in Stratix III variants) interface to RF front-ends via CPRI or OBSAI, while the I3 industrial grade supports outdoor base-station environments.
추천
Military Radar Signal Processing
Radar systems require high-throughput pulse compression, moving-target-indication (MTI) and synthetic-aperture radar (SAR) processing - tasks that map cleanly onto the EP3SE110F1152I3N's DSP blocks and M144K memory. The device's industrial -40C to +100C temperature range is acceptable in many ground- and shipboard-radar enclosures, while its 744 I/Os sustain multi-channel ADC/DAC hookups. The 65 nm process offers better radiation tolerance than smaller nodes at modest clock rates, making it suitable for non-space military platforms.
추천
Software-Defined Radio (SDR) Platforms
SDR platforms benefit from the EP3SE110F1152I3N's combination of high logic density, large block RAM for sample buffering, and flexible I/O banks supporting LVDS, LVPECL and HSTL for direct ADC interface. A typical wideband-receiver design places a 16-bit ADC at 250-500 MSPS directly into the FPGA's LVDS pairs, then performs channelization, DDC and demodulation in DSP blocks. The I3 industrial temperature grade permits deployment in outdoor SDR enclosures for tactical comms.
추천
Medical Imaging Front-Ends (Ultrasound / CT)
The EP3SE110F1152I3N's high memory bandwidth and 744 I/Os support ultrasound beamformers with 64-128 channels, each running at 40 MSPS, with on-chip buffering for raw RF data. CT image reconstruction uses the block RAM for sinogram storage and DSP blocks for back-projection kernels. The 1.1 V core keeps per-channel power dissipation low - critical for cart-based and portable medical imaging - while the I3 industrial temperature range suits clinical environments.
추천
Video Broadcast Infrastructure
Broadcast routers and production switchers use the EP3SE110F1152I3N to handle uncompressed SDI/HD-SDI/3G-SDI streams at 270 Mbps to 3 Gbps, plus JPEG2000 and H.264 encoding pipelines. The device's 744 I/Os aggregate 32-64 SDI streams with on-chip cross-point switching, while its DSP blocks handle real-time video scaling and color-space conversion. Industrial temperature support is essential for outdoor broadcast transmitters and weatherproof head-end equipment.
추천
추천 제품 요약
엔지니어링 참조 데이터: EP3SE110F1152I3N — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | EP3SE110F1152I3 | EP3SE110F1152I2N | EP3SE110F1152C4N | EP3SE110F1152C4LN | EP3SE110F1152C3N |
|---|---|---|---|---|---|---|
| Brand | Altera (Intel PSG) | Altera (Intel PSG) | Altera (Intel PSG) | Altera (Intel PSG) | Altera (Intel PSG) | Altera (Intel PSG) |
| Package | 1152-ball FC-FBGA | 1152-ball FC-FBGA - same | 1152-ball FC-FBGA - same | 1152-ball FC-FBGA - same | 1152-ball FC-FBGA - same | 1152-ball FC-FBGA - same |
| Logic Elements | 107,500 | 107,500 | 107,500 | 107,500 | 107,500 | 107,500 |
| Total RAM Bits | 8,936,448 | 8,936,448 | 8,936,448 | 8,936,448 | 8,936,448 | 8,936,448 |
| Maximum User I/Os | 744 | 744 | 744 | 744 | 744 | 744 |
| Speed Grade | I3 (fast, industrial) | I3 (fast, industrial) | I2 (slower, industrial) | C4 (slower, commercial) | C4L (low-power, commercial) | C3 (fast, commercial) |
| Operating Temperature | -40C to +100C (industrial) | -40C to +100C (industrial) | -40C to +100C (industrial) | 0C to +85C (commercial) | 0C to +85C (commercial) | 0C to +85C (commercial) |
| Lead-Free / RoHS | Yes (N suffix) | No (no N suffix) | Yes | Yes | Yes | Yes |
주요 차별점
- Same 1152-FCBGA footprint across all temperature/speed variants (vs EP3SE110F780I3N (780-pin FC-FBGA))
- Highest LE and RAM density in the Stratix III E family (vs EP3SE50F780C4N)
- Industrial temperature range supports field deployment (vs EP3SE110F1152C4N (commercial 0C-85C))
설계 노트
The EP3SE110F1152I3N uses a 35 x 35 mm FC-FBGA with 1.0 mm ball pitch (verify exact pitch against the Stratix III Device Handbook pin table). Use a 12-15 mil via-in-pad microvia stack-up (e.g., 4-2-4 or similar HDI process) to escape the inner balls. Maintain 100-ohm differential impedance for LVDS pairs and 50-ohm single-ended for general-purpose CMOS I/O. Apply ground-balls-guard pattern around each differential pair for crosstalk isolation.
Stratix III E devices require separate VCCINT (1.1 V core), VCCAUX (2.5 V), VCCPD (2.5 V or 3.0 V for 3.3 V LVCMOS), per-bank VCCIO (1.2 V-3.0 V), and VCCPGM (1.8 V-3.3 V) rails. Decoupling must include 0.1 uF X7R capacitors at every power-ball cluster plus bulk polymer or tantalum capacitors on each rail. Estimated core current at full utilization (107,500 LE, 50% toggle, 200 MHz) is in the 3-5 A range - size the 1.1 V regulator for at least 8 A with adequate thermal margin.
The 1152-ball FC-FBGA package has a JEDEC JESD51 theta-JA of approximately 10-12 C/W with a 4-layer PCB and proper thermal-via array under the die. Estimated worst-case junction-to-ambient thermal rise at 8 W is 80-100 C, demanding either forced-air cooling or a heat-spreader for industrial temperature compliance. Use the Quartus II PowerPlay early-power-estimator before PCB layout to size the cooling solution.
Do not mix LVDS and 3.3 V LVCMOS within the same I/O bank without confirming VCCIO compatibility. The Stratix III E is sensitive to VCCIO ramp ordering during configuration; ensure all rails reach regulation before MSEL pins are sampled. Failing to enable the CRC error-detection block on critical configuration bitstreams can mask bit-flip-induced system failures in long-lifecycle deployments.
규정 준수 정보
Lead-free and RoHS-compliant per Stratix III Device Handbook ordering information (N suffix). AEC-Q100 qualification is not applicable for FPGAs; refer to specific application notes for automotive-grade variant EP4CGX series if needed. Halogen-free and conflict-minerals status not explicitly stated in verified data.
