IMW65R027M1H - 650V 47A SiC MOSFET 27mOhm | Infineon
부품 번호: IMW65R027M1H ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $9.8 | $9.80 |
| 10 | $8.85 | $88.50 |
| 100 | $7.6 | $760.00 |
| 500 | $6.95 | $3,475.00 |
| 1,000 | $6.3 | $6,300.00 |
IMW65R027M1H 개요
A silicon carbide (SiC) MOSFET is a wide-bandgap power transistor that replaces conventional silicon superjunction or IGBT devices in high-voltage switching stages. Within the power-management hierarchy (MOSFET -> power transistor -> power semiconductor), SiC devices exploit the wider bandgap, higher critical field and superior thermal conductivity of the SiC material to achieve lower switching losses, higher junction temperature capability and smaller magnetics in converters operating from 400 V to 800 V DC buses.
Key features of this M1-series device include optimized switching behavior at higher currents, a commutation-robust fast body diode with low reverse-recovery charge (Qfr), superior gate-oxide reliability, and a maximum junction temperature (Tj,max) of 175C with excellent thermal behavior. Infineon's CoolSiC trench technology also provides increased avalanche capability and lower temperature dependency of RDS(on) and pulse current compared with planar SiC competitors.
The device is gate-driver compatible with standard silicon MOSFET drivers, easing migration from IGBT or superjunction designs without exotic gate-drive circuitry. Infineon states that for optimum lifetime and reliability, operating conditions should not exceed 80% of the maximum ratings stated in the datasheet.
Typical applications include solar inverters, server and telecom power supplies, energy storage converters, EV on-board chargers, and industrial motor drives where high efficiency and high power density are required.
When designing, respect the derating guidance (80% of maximum ratings) and ensure the gate drive provides adequate negative or zero-volt off-state bias to avoid parasitic turn-on in half-bridge topologies.
This page synthesizes distributor pricing, drop-in alternatives, design notes, and application guidance not found in the manufacturer datasheet.
드롭인 대체품: IMW65R027M1H — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
IMW65R022M1H
✅ 드롭인 ⚠️ 사양 미검증📋 참조 대체품 (카탈로그에 없음)
IMW65R030M1H
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
IMW65R033M1H
✅ 드롭인 ⚠️ 사양 미검증📋 참조 대체품 (카탈로그에 없음)
IMW65R027M1H 최대 정격 & 전기적 특성
| Technology | CoolSiC M1 SiC Trench |
| Drain-Source Voltage (VDS) | 650 V |
| Continuous Drain Current (ID) at 25C | 47 A |
| RDS(on) Typ at Tj = 25C | 27 mOhm |
| RDS(on) Max | 34 mOhm |
| Maximum Power Dissipation (Pd) | 189 W |
| Configuration | Single N-channel with built-in body diode |
| 실장 유형 | Through-Hole (THT) |
| 패키지 | TO-247 3-pin |
| Maximum Operating Temperature | 150 C |
| Maximum Junction Temperature (Tj,max) | 175 C |
| JESD-609 Code | e3 |
| Polarity | N-channel |
| 핀 수 | 3 |
| 채널 수 | 1 |
| Body Diode | Fast commutation-robust body diode with low Qfr |
| Avalanche Capability | Increased avalanche capability |
| Gate Driver Compatibility | Compatible with standard drivers |
| Operating Temperature Max (digchip listing) | 150 C |
IMW65R027M1H 핀 구성
| 핀 1 | G — Gate - control terminal for the MOSFET channel |
| 핀 2 | D — Drain - connected to the tab and high-voltage power path |
| 핀 3 | S — Source - power return path; body diode cathode-side reference |
안전 동작 영역 (Estimated from TO-247 SiC 650V class limits - verify against official datasheet)
일반적인 애플리케이션
IMW65R027M1H 적합 용도: 6 애플리케이션s: Solar Inverter Power Stage, Server and Telecom Power Supplies, EV On-Board Charger (OBC), Industrial Motor Drives, Energy Storage Converters (ESS/PCS), High-Voltage DC/DC and Charging Piles.
Solar Inverter Power Stage
The IMW65R027M1H fits solar string-inverter half-bridge and boost stages where the 650 V rating covers typical 400 V DC links with margin. Its 27 mOhm typical RDS(on) minimizes conduction loss at the 10-30 A operating currents of residential and commercial inverters, while the low-Qfr commutation-robust body diode handles dead-time freewheeling without costly external antiparallel diodes. SiC switching enables 20-100 kHz operation, shrinking magnetics and heat-sink volume versus IGBT designs. Place the device in a half-bridge with tight DC-link decoupling; the efficiency gain versus silicon superjunction parts is typically 1-2 percentage points at these frequencies, which directly reduces heat-sink cost.
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Server and Telecom Power Supplies
In server PSU and telecom rectifier PFC and LLC stages, the IMW65R027M1H delivers the high-frequency switching that 3 kW-class CRPS units require. The CoolSiC M1 trench technology keeps switching losses low at 65-150 kHz, and the 175C Tj capability provides derating margin inside fan-less or low-airflow brick enclosures. Its standard-driver compatibility lets designers reuse proven silicon gate-driver topologies during the SiC migration. Estimated benefit: replacing a 500 V-class silicon MOSFET with this 27 mOhm CoolSiC device in a CCM boost PFC typically raises peak efficiency by over one percentage point at 50% load, helping units meet 80 PLUS Titanium-class targets.
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EV On-Board Charger (OBC)
The IMW65R027M1H suits 6.6-11 kW EV on-board charger PFC and DC/DC stages operating from grid-derived 400 V buses. SiC switching at high frequency reduces the size of the PFC choke and resonant tank - critical in OBCs where weight and volume are constrained. The device's increased avalanche capability adds robustness against surge transients on the AC input path, and its fast body diode supports phase-leg commutation in totem-pole PFC topologies. Through-hole TO-247 mounting also simplifies assembly onto cold plates or heat sinks in automotive power modules built at lower volumes.
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Industrial Motor Drives
In industrial servo drives and VFD inverter stages, the IMW65R027M1H can replace IGBTs where switching frequency, efficiency, or thermal headroom is the bottleneck. The 650 V class covers 380-480 V AC line-fed drives via the DC bus, and the 27 mOhm RDS(on) yields conduction loss comparable to mid-range IGBTs while cutting switching loss substantially at 16-40 kHz PWM. Lower switching loss reduces dv/dt-related motor bearing stress filters and electromagnetic noise. Infineon recommends keeping operation below 80% of maximum ratings in drives, where repetitive avalanche and diode-commutation stress occur during regenerative and braking events.
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Energy Storage Converters (ESS/PCS)
Battery energy storage power conversion systems (PCS) benefit from the IMW65R027M1H in bidirectional DC/DC and inverter stages handling 400-800 V battery buses. The low temperature coefficient of RDS(on) in the CoolSiC M1 technology keeps conduction losses predictable across the wide -20C to +50C ambient range typical of containerized ESS installations, and the 47 A rating supports paralleling for 30-100 kW power stages. The fast body diode's low reverse-recovery charge is especially valuable in bidirectional buck-boost stages where hard commutation occurs in both directions during charge and discharge cycles.
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High-Voltage DC/DC and Charging Piles
The IMW65R027M1H is used in DC fast-charger power modules and high-voltage isolated DC/DC converters, where 650 V-rated switches on the primary side of LLC or phase-shifted full-bridge stages switch at 50-150 kHz. Its trench SiC structure reduces turn-off tail-free losses compared with IGBTs, directly enabling the higher frequencies that shrink the transformer and resonant capacitor bank. With 189 W maximum power dissipation and a standard TO-247 footprint, thermal design follows conventional through-hole MOSFET practice: a mounting hole clamp or clip with thermal grease onto an extruded or liquid-cooled heat sink, and Kelvin-referenced driver layout to minimize source ringing.
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추천 제품 요약
엔지니어링 참조 데이터: IMW65R027M1H — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | IMW65R022M1H | IMW65R030M1H | IMW65R033M1H |
|---|---|---|---|---|
| Package | TO-247 3-pin | TO-247 3-pin - same | TO-247 3-pin - same | TO-247 3-pin - same |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Drain-Source Voltage | 650 V | 650 V | 650 V | 650 V |
| RDS(on) Typ at 25C | 27 mOhm | 22 mOhm | 30 mOhm | 33 mOhm |
| Technology | CoolSiC M1 Trench | CoolSiC M1 Trench | CoolSiC M1 Trench | CoolSiC M1 Trench |
| Tj,max | 175 C | 175 C | 175 C | 175 C |
주요 차별점
- Lower conduction loss in same footprint (vs IMW65R030M1H)
- Fast low-Qfr body diode (vs IMW65R033M1H)
- Standard gate-driver compatibility (vs IMW65R022M1H)
설계 노트
The IMW65R027M1H dissipates up to 189 W at its absolute maximum rating, but Infineon recommends staying below 80% of maximum ratings for optimum lifetime. Estimated: at 20 A continuous with 27 mOhm RDS(on), conduction loss is roughly 20^2 x 0.027 = 10.8 W at 25C, rising with junction temperature; account for the positive RDS(on) temperature coefficient when sizing the heat sink. Use thermal grease and a calibrated mounting clip on the TO-247 tab, and verify Tj stays under 150C worst-case despite the 175C rating.
As a 3-pin TO-247 device, this part has no Kelvin source, so source inductance is common to the gate and power loops. Keep the gate-drive loop as short as possible, route the gate return directly to the power source node, and use an external gate resistor (start around 2-10 Ohm) to damp ringing caused by common-source inductance. In half-bridge layouts, minimize the commutation loop between high-side drain and low-side source and place the DC-link capacitor within millimeters of the switch pair.
Do not drive this CoolSiC MOSFET with an IGBT-style +15 V/0 V drive without reviewing the gate voltage limits in the official datasheet - Infineon CoolSiC devices are typically driven at +18 V on-state for lowest RDS(on). Ensure a defined off-state (0 V or small negative bias) to prevent dv/dt-induced parasitic turn-on in half-bridge operation. Also verify body-diode commutation duty in your topology; the low-Qfr diode is robust, but repetitive avalanche and over-current events must stay within datasheet limits.
규정 준수 정보
JESD-609 code e3 (tin plating, lead-free) per Partstack distributor data. Note: Infineon datasheet states the component may be used in automotive, aviation, aerospace, or life-support systems only with express written approval from Infineon.
