IRFR7540TRPBF - 60V 90A 4.8mΩ StrongIRFET N-MOSFET | Infineon
부품 번호: IRFR7540TRPBF ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $0.83 | $0.83 |
| 10 | $0.75 | $7.50 |
| 100 | $0.62 | $62.00 |
| 500 | $0.55 | $275.00 |
| 1,000 | $0.48 | $480.00 |
IRFR7540TRPBF 개요
An N-channel power MOSFET is a voltage-controlled semiconductor switch in which applying a positive gate-to-source voltage creates an inversion layer that conducts current between drain and source. The 'StrongIRFET' technology platform from Infineon targets low-voltage, high-current applications by optimizing the silicon cell density and die size for minimal RDS(on) per unit area. The DPAK (TO-252AA) surface-mount package is the industry-standard footprint for medium-power discrete MOSFETs, sitting in the hierarchy: TO-252 -> DPAK family -> surface-mount power packages. MOSFETs belong to the broader category: transistor -> FET -> power MOSFET -> discrete semiconductor.
Key features include 60 V VDS max, 4.8 mΩ RDS(on) max at VGS = 10 V (typical 3.7 mΩ at 100 µA), gate threshold of 3.7 V typical, low gate charge for fast switching, and a rugged avalanche-rated body diode that tolerates unclamped inductive switching events. The combination of low on-resistance and high continuous current makes the IRFR7540TRPBF suitable for high-current switching where conduction losses dominate.
The IRFR7540TRPBF uses Infineon's StrongIRFET™ silicon technology, an enhancement-mode N-channel trench MOSFET architecture. The trench-gate structure reduces cell pitch and increases channel density per unit area, directly lowering RDS(on). The die is rated to 175°C maximum junction temperature, and thermal resistance from junction to case (RθJC) is typically around 1°C/W per the DPAK package family, enabling 140 W dissipation when properly mounted on a PCB with sufficient copper area.
Typical applications include 48 V buck converters, motor drives and H-bridges, DC-DC synchronous rectification, battery management systems for e-mobility, and high-current load switches in industrial automation. The low RDS(on) keeps conduction losses low in continuous high-current paths.
When designing with this device, calculate power dissipation as P = I² × RDS(on) and ensure the PCB copper area keeps junction temperature below 150°C for reliable operation. Use a gate driver capable of sourcing/sinking at least 1 A to switch the gate quickly and minimize transition losses.
드롭인 대체품: IRFR7540TRPBF — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: IRFR7540TRPBF (동일 폼 팩터 및 풋프린트) — 차이점: Drain-Source Voltage (VDS), Package, Technology.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
IRFR7540TRPBF-Q1
✅ 드롭인 ⚠️ 사양 미검증📋 참조 대체품 (카탈로그에 없음)
IRFR7540TRPBF
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
$0.48 / 개
데이터시트 보기 →IRFB7540PBF
✅ 드롭인 ⚠️ 사양 미검증📋 참조 대체품 (카탈로그에 없음)
VBGE1603
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
IRFH5015TRPBF
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
$0.62 / 개
데이터시트 보기 →IRFR7540TRPBF 최대 정격 & 전기적 특성
| FET Type | N-Channel |
| Technology | StrongIRFET™ (HEXFET) |
| Drain-Source Voltage (VDS) | 60 V |
| Continuous Drain Current (ID) at TC=25°C | 90 A |
| Pulsed Drain Current (IDM) | 110 A (limited by TJmax) |
| Power Dissipation (PD) at TC=25°C | 140 W |
| RDS(on) max at VGS=10V | 4.8 mΩ |
| RDS(on) typical at 100µA VGS | 3.7 mΩ |
| Gate-Source Voltage (VGS) max | ±20 V |
| Gate Threshold Voltage (VGS(th)) | 3.7 V typical |
| 동작 온도 범위 | -55°C to +175°C (TJ max) |
| 패키지 | TO-252AA (DPAK) Surface Mount |
| 실장 유형 | Surface Mount |
| MSL 레벨 | 1 |
| RoHS 상태 | Compliant |
| Lead-Free | Yes |
IRFR7540TRPBF 핀 구성
| 핀 1 | Gate — Gate control input; drive to VGS=10V for full enhancement |
| 핀 2 | Drain (pin) — Drain connection (primary thermal path is via tab) |
| 핀 3 | Source — Source connection; Kelvin-source recommended for high-current designs |
| 핀 4 | Drain (tab) — Drain tab - main current path and thermal pad; solder to PCB copper pour |
안전 동작 영역 (DC, TC=25°C)
일반적인 애플리케이션
IRFR7540TRPBF 적합 용도: 6 애플리케이션s: 48V Buck Converter Synchronous Rectifier, Brushless DC Motor Drive (BLDC) Half-Bridge, Battery Management System (BMS) Load Switch, Solar Inverter DC-side Switching, Industrial Solenoid and Relay Driver, High-Current USB-PD and Power Bank Output Stage.
48V Buck Converter Synchronous Rectifier
The IRFR7540TRPBF excels as the low-side synchronous rectifier in 48V-to-12V or 48V-to-5V buck converters for telecom and industrial DC-DC modules. Its 4.8 mΩ max RDS(on) at VGS=10V keeps conduction loss under 5W at 50A continuous load, while 60V VDS provides 25% headroom above 48V nominal bus. The 175°C junction temperature rating and avalanche-rugged body diode tolerate inductor ringback transients that occur at switching transitions. Place it on a minimum 1 square inch of copper pour to keep RθJA below 50°C/W, and pair with a gate driver capable of 1A source/sink current for fast switching at 100-200 kHz. Lower Qg than higher-voltage MOSFETs reduces gate-drive losses significantly.
추천
Brushless DC Motor Drive (BLDC) Half-Bridge
In three-phase BLDC motor drives for e-bikes, power tools, and small industrial pumps, the IRFR7540TRPBF serves as the low-side switch in each half-bridge position. Its 90A continuous current rating supports motors drawing 30-60A phase current without thermal runaway, while 4.8 mΩ RDS(on) keeps conduction losses to roughly 7W per switch at 40A. The StrongIRFET™ silicon's avalanche-rated body diode absorbs regenerative braking energy back into the DC bus, eliminating the need for separate freewheeling diodes in many designs. Mount on D2PAK-scale copper area or a small heatsink for continuous operation; pulse-current capability to 110A handles motor startup transients with adequate margin.
추천
Battery Management System (BMS) Load Switch
The IRFR7540TRPBF functions as a high-current load disconnect switch in 48V battery management systems for e-mobility and stationary energy storage. Its 4.8 mΩ on-resistance drops only 240mV at 50A continuous load, minimizing parasitic power loss across the disconnect path. The 60V VDS rating handles transient voltages from inductive battery cabling during disconnect events, while the rugged body diode provides safe freewheeling of motor back-EMF when paired with a pre-charge circuit. The TO-252 DPAK package allows PCB-mount integration without a chassis-mounted contactor, reducing system cost and weight. Use a dedicated gate driver like the BTH60801EPLXUMA1 for controlled turn-off during fault conditions.
추천
Solar Inverter DC-side Switching
In low-voltage solar charge controllers and micro-inverters operating from 24V or 48V battery banks, the IRFR7540TRPBF serves as the main power switching element on the battery side. Its 90A current rating supports inverters up to approximately 4kW, while 60V VDS handles battery voltage transients during load steps. The low RDS(on) of 4.8 mΩ maximizes conversion efficiency at high current, reducing thermal stress on the heatsink. Infineon's StrongIRFET™ technology provides excellent avalanche ruggedness for the unclamped inductive switching events common when driving transformer primaries. Mount on aluminum substrate PCB or attach to a 50mm+ heatsink for continuous full-power operation.
추천
Industrial Solenoid and Relay Driver
The IRFR7540TRPBF drives high-current 24V/48V DC solenoids, contactors, and hydraulic valves in industrial automation and heavy equipment. Its 90A continuous rating and 110A pulse rating easily handle solenoid inrush currents that can reach 5-10x steady-state values. The low 4.8 mΩ RDS(on) minimizes voltage drop across the switch, ensuring full system voltage reaches the solenoid coil. The avalanche-rated body diode provides safe freewheeling path when the solenoid is de-energized, eliminating voltage spike damage to the switch. Use it with a simple logic-level gate driver like the IRS2110SPBF or low-side driver IRS2003 for microcontroller-based control.
추천
High-Current USB-PD and Power Bank Output Stage
In high-power USB-PD chargers and power banks delivering 60-100W from 4S lithium battery packs (nominal 14.4V, max 16.8V), the IRFR7540TRPBF serves as the synchronous rectifier on the buck-boost output stage. Its 60V VDS rating provides massive headroom above the 16.8V battery voltage, allowing the design to absorb load-dump transients and reverse-polarity events without damage. The 4.8 mΩ RDS(on) keeps conversion efficiency above 96% at 20A continuous output, critical for thermal management in compact charger enclosures. Its small DPAK footprint fits easily on the secondary side of USB-PD chargers. Pair with a digital controller like XDPP1148100BXUMA1 for programmable output voltage and current.
추천
추천 제품 요약
엔지니어링 참조 데이터: IRFR7540TRPBF — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | IRFR7540TRPBF-Q1 | VBGE1603 |
|---|---|---|---|
| Package | TO-252AA (DPAK) | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same |
| Brand | Infineon | Infineon | VBsemi |
| Drain-Source Voltage (VDS) | 60 V | 60 V | 60 V |
| RDS(on) max at VGS=10V | 4.8 mΩ | 4.8 mΩ | 5.5 mΩ (estimated) |
| Automotive Grade (AEC-Q100) | No | Yes | No |
주요 차별점
- Infineon StrongIRFET™ silicon with avalanche-rated rugged body diode (vs VBGE1603)
- Automotive-grade variant available in same footprint (vs VBGE1603)
- Established global supply chain with 11+ distributor sources (vs VBGE1603)
설계 노트
Estimated: at 50A continuous load and 4.8 mΩ RDS(on), conduction loss is approximately P = I² × R = 50² × 0.0048 = 12 W. The DPAK package has RθJC around 1.5°C/W, meaning junction temperature rises 18°C above the case, but the dominant thermal resistance is RθJA (50-60°C/W on a 1 sq inch copper pour on FR4). For reliable operation below 150°C junction, mount on at least 1 square inch of 2oz copper or use a small heatsink with thermal interface material. At full 90A continuous rating, active cooling or chassis-mount heatsinking is mandatory.
Solder the DPAK drain tab to a copper pour that extends at least 50mm² (roughly 7mm × 7mm) on the top layer, with thermal vias (0.3mm diameter, 1mm pitch) connecting to a similar bottom-layer pour for double-sided cooling. Keep source and gate traces short and route the gate return (Kelvin source) directly to the package source pin to minimize gate-loop inductance and prevent oscillation during fast switching transitions. Place the gate driver within 10mm of the gate pin.
Do not exceed VGS = ±20V; gate oxide breakdown is permanent. Ensure VDS stays below 60V under all conditions including inductive flyback - add a TVS diode or RC snubber across inductive loads. The body diode conducts during deadtime in half-bridge configurations; verify its reverse recovery charge (Qrr) is acceptable for your switching frequency. Exceeding the 90A bond-wire limit (even briefly at TC=25°C) may cause wire fusing - derate to 50A or less at realistic PCB-mount case temperatures above 100°C.
In half-bridge configurations, minimize the high-side/low-side switch loop inductance by placing the high-side and low-side MOSFETs as close together as possible with a small ceramic bypass capacitor (1-10µF X7R) directly across the half-bridge. This loop inductance creates voltage overshoot during switching that can exceed VDS rating and damage the MOSFET. Use a gate-driver with built-in deadtime control (e.g., IRS2110SPBF) to prevent shoot-through.
규정 준수 정보
RoHS compliant per Infineon product page. PBF suffix denotes lead-free (Pb-free) plating. Choose IRFR7540TRPBF-Q1 variant for AEC-Q100 automotive qualification. Halogen-free status not explicitly confirmed in available data.
