MRF6S21050LR5 - 11.5W RF MOSFET 28V 2.16GHz NI-400 | NXP
부품 번호: MRF6S21050LR5 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $32.5 | $32.50 |
| 10 | $29.2 | $292.00 |
| 100 | $26.1 | $2,610.00 |
| 500 | $23.5 | $11,750.00 |
| 1,000 | $21.4 | $21,400.00 |
MRF6S21050LR5 개요
An RF power MOSFET is a laterally-diffused metal-oxide-semiconductor transistor optimized for high-frequency, high-power operation in the VHF/UHF/microwave bands. RF power MOSFETs differ from low-frequency power MOSFETs in their use of an interdigitated gate structure, short channel lengths, and ceramic flanged packages that minimize parasitic inductance and provide a low-thermal-resistance path to the system heatsink. Within the RF power device family, they sit beneath LDMOS (laterally-diffused MOSFET) transistors - the technology used here - and above small-signal RF MOSFETs in the power-handling hierarchy.
The MRF6S21050LR5 uses NXP's HV6 LDMOS process technology, which is widely adopted in cellular base-station power amplifiers because of its high breakdown voltage, excellent linearity under W-CDMA modulation, and broadband capability. Typical performance includes 16 dB small-signal gain at 2.16 GHz with high drain efficiency when operated into a properly tuned output matching network. The device's internal matching simplifies external matching circuitry, and its integrated ESD protection improves manufacturing robustness in volume production.
Typical applications include W-CDMA driver and final PA stages in macro-cell base stations, GSM/EDGE linear amplifiers, and industrial/scientific RF generators operating in the 2.1-2.2 GHz band. The NI-400 ceramic package with integrated mounting flange allows direct bolted attachment to a system heatsink for low thermal resistance.
When designing with this part, ensure the input/output matching networks are designed for the specific operating frequency band - S-parameter data should be used with a simulation tool such as ADS or AWR. Adequate DC-blocking and bias-decoupling networks are required to prevent parametric oscillation. Thermal management is critical: the flange must be bolted to a heatsink with thermal compound, and the drain voltage must be sequenced cleanly to avoid device stress.
This page synthesizes distributor inventory, drop-in compatible alternatives from NXP's RF power portfolio, and practical design considerations for cellular infrastructure PA designers - information not consolidated in any single distributor or manufacturer page.
드롭인 대체품: MRF6S21050LR5 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: MRF6S21050LR5 (동일 폼 팩터 및 풋프린트) — 차이점: Configuration, Mounting Type, Output Power (Pout), Package / Case, RoHS Status.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
MRF6S21050LSR5
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
$51.4 / 개
데이터시트 보기 →MRF6S21050NR1
✅ 드롭인 ⚠️ 사양 미검증📋 참조 대체품 (카탈로그에 없음)
MRF6S19150LR5
✅ 드롭인 ⚠️ 사양 미검증📋 참조 대체품 (카탈로그에 없음)
MRF6S2300LR5
✅ 드롭인 ⚠️ 사양 미검증📋 참조 대체품 (카탈로그에 없음)
BLF6G10-200PRN
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
MRF6S21050LR5 최대 정격 & 전기적 특성
| 트랜지스터 유형 | N-Channel RF Power MOSFET (LDMOS) |
| Technology | HV6 LDMOS |
| Drain-Source Voltage (Vdss) | 28 V |
| Continuous Drain Current (Id) | 450 mA |
| Output Power (Pout) | 11.5 W |
| Power Gain (Gp) | 16 dB at 2.16 GHz |
| Operating Frequency | 2.16 GHz (W-CDMA band) |
| Test Conditions | 2.16 GHz, 28 V, W-CDMA modulation |
| 패키지 / 케이스 | NI-400 (ceramic flanged) |
| 실장 유형 | Flange mount, chassis-mount |
| Configuration | Single N-channel |
| 동작 온도 범위 | -40C to +150C (junction) |
| MSL 레벨 | Not applicable (ceramic flanged) |
| RoHS 상태 | Compliant (per distributor listing) |
| ESD Protection | Yes (integrated, per device family) |
MRF6S21050LR5 핀 구성
| 핀 1 | GATE — RF input / DC gate bias |
| 핀 2 | DRAIN — RF output / DC drain supply (28V) on ceramic top side |
| 핀 3 | SOURCE — Source on ceramic top side (low-inductance ground) |
| 핀 FLANGE | DRAIN / GROUND — Bottom-side metal flange: drain contact and heatsink ground path |
안전 동작 영역 (estimated, typical HV6 LDMOS family)
일반적인 애플리케이션
MRF6S21050LR5 적합 용도: 6 애플리케이션s: W-CDMA Macro-Cell Base Station PA, GSM/EDGE Linear PA Driver Stage, Industrial RF Generator 2.1 GHz, Repeater / DAS Power Amplifier, Driver for Higher-Power LDMOS Finals, Test & Measurement RF Source Amplifier.
W-CDMA Macro-Cell Base Station PA
The MRF6S21050LR5's 11.5W output and 16 dB gain at 2.16 GHz target the W-CDMA downlink band where it serves as either a driver stage or low-power final stage in macro-cell power amplifiers. The device's HV6 LDMOS process delivers the linearity required for 3GPP W-CDMA modulation with adjacent-channel leakage ratio (ACLR) within spec. Mounted in the NI-400 ceramic flange to a heatsink, it dissipates ~30W worst case at P1dB with proper bias. This NXP part is preferred over silicon bipolar alternatives for its broadband capability and ruggedness into VSWR mismatches typical of antenna feeds.
추천
GSM/EDGE Linear PA Driver Stage
In GSM/EDGE linear amplifier chains, the MRF6S21050LR5 functions as a driver for higher-power finals. Its 16 dB gain at 2.16 GHz reduces the required drive level from the preceding stage, while its 28V operation matches standard telecom PA bias rails. Although not specified for the 900 MHz GSM band, the HV6 LDMOS technology provides broadband response that designers can tune for 900 MHz operation with modified matching networks. The NI-400 ceramic flange simplifies integration with existing PA chassis designs originally built for NXP's MRF6 family parts.
추천
Industrial RF Generator 2.1 GHz
Industrial RF generators for plasma excitation, dielectric heating, or materials processing in the 2.1 GHz band benefit from the MRF6S21050LR5's continuous-wave capability and rugged NI-400 package. Unlike pulsed radar applications, CW industrial use requires sustained dissipation; the ceramic flange bolts directly to a process-chamber heatsink for thermal management. NXP's HV6 LDMOS process tolerates high VSWR mismatches that occur when plasma impedance varies, making this part a robust choice for harsh industrial environments where amplifier reliability is paramount.
추천
Repeater / DAS Power Amplifier
Distributed antenna systems (DAS) and cellular repeaters operating in the W-CDMA downlink band use the MRF6S21050LR5 as a cost-effective 11.5W amplification stage. Its 16 dB gain enables two-stage architectures where a single driver feeds a higher-power final, reducing overall BOM cost. The device's broadband nature accommodates the full 2110-2170 MHz band without band-specific tuning, simplifying repeater designs that must cover multiple operators. The NI-400 package is the industry-standard form factor for tower-mounted PA modules.
추천
Driver for Higher-Power LDMOS Finals
As a driver stage, the MRF6S21050LR5's 11.5W output comfortably drives 60W+ LDMOS finals such as NXP's MRF6S21100 (100W class). The 16 dB gain provides ample headroom to overcome losses in the inter-stage matching network and bias tee. Designers cascade two MRF6S21050LR5 devices for 25W+ driver chains feeding 100W+ finals used in macro-cell PAs. Pin-compatibility across NXP's MRF6S family simplifies driver-final pairing on the same PCB.
추천
Test & Measurement RF Source Amplifier
In laboratory and production test equipment, the MRF6S21050LR5 amplifies 2.1 GHz CW or modulated test signals to the 11.5W level needed for receiver sensitivity, ACLR, and intermodulation testing. Its LDMOS linearity and broadband response make it suitable as a generic 2 GHz power stage in automated test systems. The ceramic NI-400 package simplifies fixture integration, and the device's ESD protection helps survive repeated connection cycles in production test environments.
추천
추천 제품 요약
엔지니어링 참조 데이터: MRF6S21050LR5 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | MRF6S21050LSR5 | MRF6S21050NR1 | MRF6S19150LR5 | MRF6S2300LR5 | BLF6G10-200PRN |
|---|---|---|---|---|---|---|
| Package | NI-400 | NI-400 - same | NI-400 - same | NI-400 - same | NI-400 - same | Ceramic flanged (similar NI-400-class) |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | Ampleon |
| Drain Voltage (Vds) | 28 V | 28 V | 28 V | 28 V | 28 V | 28 V |
| Output Power | 11.5 W | 11.5 W | 11.5 W | 32 W | 11.5 W (2.3 GHz) | 200 W |
| Power Gain (Gp) | 16 dB | 16 dB | 16 dB | 16 dB | 16 dB | 20 dB |
| Operating Frequency | 2.16 GHz | 2.16 GHz | 2.16 GHz | 1.93 GHz | 2.3 GHz | 860-900 MHz |
| Process Technology | HV6 LDMOS | HV6 LDMOS | HV6 LDMOS | HV6 LDMOS | HV6 LDMOS | LDMOS (Ampleon Gen6) |
| Mounting Type | Flange mount (NI-400 ceramic) | Flange mount (NI-400) | Flange mount (NI-400) | Flange mount (NI-400) | Flange mount (NI-400) | Flange mount (ceramic) |
주요 차별점
- Drop-in thermal-optimized variant within same family (vs MRF6S21050LSR5)
- Higher output power available in same package footprint (vs MRF6S19150LR5)
- NXP HV6 LDMOS process maturity vs Ampleon Gen6 (vs BLF6G10-200PRN)
설계 노트
The NI-400 ceramic flange MUST be bolted to a flat heatsink using thermal compound (e.g. Wakefield Type 120 thermal paste, ~0.05 C/W per interface). At 11.5W output with 30W DC input at P1dB, the device dissipates ~18W. Without adequate heatsinking, junction temperature rises above 150C and triggers thermal shutdown. Estimated: with a 1C/W heatsink and 0.1 C/W thermal interface, junction-to-ambient thermal resistance is ~1.3 C/W, giving a ~23C rise at 18W dissipation - acceptable for 25C ambient. Always specify a heatsink rated for continuous 18W dissipation.
Use Roger RO4350B or RO4003C substrate (not standard FR4) for the PA PCB - FR4 loss tangent at 2.16 GHz (~0.02) costs 0.5-1 dB per stage. Use 1 oz copper cladding minimum; 2 oz preferred for improved thermal spreading. Place input/output matching networks as close to the gate/drain leads as possible. The source leads should have multiple ground vias directly under the package to minimize source-lead inductance, which causes parametric oscillation. Decoupling: 10uF/100nF/10nF Pi-network on the 28V drain bias line within 5 mm of the package.
Do NOT operate without the source lead bonded to ground - open source destroys the device instantly under drain bias. Drain bias MUST be sequenced ON after gate bias is established (Idq set first, then Vds ramped). Reverse sequencing causes the device to draw uncontrolled current. Do not exceed 28V Vds even briefly - avalanche breakdown is not rated for repetitive stress. Always include a 50-ohm load at the output during bench testing before applying RF drive to absorb reflected power.
Separate input and output matching networks on opposite sides of the device to maximize isolation. Use a shielded compartment or 'can' around the RF path to prevent stray radiation coupling from output back to input, which causes oscillation. The gate bias line should be RF-decoupled with a 1k ohm resistor followed by 100nF/10nF/1nF capacitors to prevent parasitic feedback through the bias network. Keep the gate bias trace short and away from the drain bias trace.
Use NXP's published reference design S-parameters (Touchstone .s2p files) for matching network synthesis in Keysight ADS or Cadence AWR. Do NOT design matching networks from ideal-component assumptions - the device's package parasitics significantly affect impedance at 2.16 GHz. For production tuning, include a small variable capacitor (0.3-3 pF) on both input and output networks for factory alignment. Always verify stability by sweeping Vgs from pinch-off to rated Idq with 50-ohm source/load - any oscillation indicates layout or bias network issues.
규정 준수 정보
RoHS and lead-free compliance per NXP product documentation. AEC-Q100 not applicable - this is an RF power MOSFET, not an automotive-qualified part. Halogen-free status not explicitly stated in the provided data.
