MRF6S21050LSR5 - 11.5W W-CDMA RF Power MOSFET | NXP | NI-400S
부품 번호: MRF6S21050LSR5 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $65.4 | $65.40 |
| 10 | $62.1 | $621.00 |
| 100 | $58.85 | $5,885.00 |
| 500 | $55.2 | $27,600.00 |
| 1,000 | $51.4 | $51,400.00 |
MRF6S21050LSR5 개요
A radio-frequency power MOSFET (LDMOS) is a laterally-diffused metal-oxide-semiconductor transistor optimized for high-frequency, high-power amplification in the MHz-to-GHz range. Within the discrete semiconductor taxonomy, it sits in this hierarchy: RF MOSFET -> power MOSFET -> MOSFET -> discrete transistor -> semiconductor. LDMOS devices dominate wireless infrastructure base-station power amplifiers because of their high breakdown voltage, high gain, and excellent efficiency when driven near saturation. The MRF6S21050LSR5 is a member of the HV6 (high-voltage sixth-generation) family used in 3G/4G cellular base-station RF chains.
Key features include a 65 V drain-source breakdown rating, 28 V nominal operating drain voltage, 16 dB typical power gain at 2.16 GHz, 11.5 W CW output power capability, and integral ESD protection. The lateral structure gives low feedback capacitance and high intrinsic ruggedness, enabling the device to survive 10:1 VSWR mismatch at the antenna connector without destructive failure - a critical requirement for cellular infrastructure with hot-standby antenna systems.
Typical applications include W-CDMA, TD-SCDMA, and multi-carrier power amplifiers in macro-cell base stations, PCS/cellular repeaters, and WLL (wireless local-loop) systems. The 2110-2170 MHz band matches the 3GPP Band 1 uplink-downlink pair, the most widely deployed UMTS frequency allocation globally.
When designing with this device, follow NXP reference-design PCB stack-up guidelines and provide sufficient copper heat-spreading around the source leads. Bias the gate from a regulated negative supply through a sequencing controller to prevent partial turn-on and to protect the LDMOS from overdrive during transmit-receive switching.
드롭인 대체품: MRF6S21050LSR5 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: MRF6S21050LSR5 (동일 폼 팩터 및 풋프린트) — 차이점: Configuration, Mounting Type, Output Power (Pout), Package / Case, RoHS Status.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
MRF6S21050NR1
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
MRF6S21050SR5
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
MRF6S21050LSR5-Q1
✅ 드롭인 ⚠️ 사양 미검증📋 참조 대체품 (카탈로그에 없음)
MRF6S19100NR1
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
MRF6V2010NR1
✅ 드롭인 ⚠️ 사양 미검증📋 참조 대체품 (카탈로그에 없음)
MRF6S21050LSR5 최대 정격 & 전기적 특성
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) |
| 트랜지스터 유형 | N-Channel Enhancement-Mode Lateral MOSFET |
| Technology | LDMOS (Laterally Diffused MOSFET) |
| Drain-Source Voltage (VDS) Maximum | 65 V |
| Nominal Operating Drain Voltage | 28 V |
| Typical Operating Frequency | 2.16 GHz (2110-2170 MHz W-CDMA band) |
| Power Gain (Gps) | 16 dB typical at 2.16 GHz |
| Output Power (Pout) | 11.5 W CW |
| Drain Current (ID) at Test | 450 mA |
| 패키지 / 케이스 | NI-400S (ceramic, 2-flange) |
| 실장 유형 | Surface Mount / Screw-Mount |
| Application | W-CDMA, TDMA, CDMA, multicarrier base-station PA |
| Configuration | Single, Common Source |
| RoHS 상태 | Compliant |
| Lead-Free | Yes |
| Operating Mode | Class AB |
MRF6S21050LSR5 핀 구성
| 핀 1 | DRAIN — RF output / drain bias (28 V nominal) |
| 핀 2 | GATE — RF input / gate bias (negative bias) |
| 핀 3 | SOURCE — Source / thermal flange (grounded) |
MRF6S21050LSR5 안전 동작 영역 (datasheet DC SOA)
일반적인 애플리케이션
MRF6S21050LSR5 적합 용도: 6 애플리케이션s: W-CDMA Macro-Cell Base-Station PA, LTE / 5G NR Band 1 Remote Radio Head (RRH), PCS / Cellular Repeater Power Amplifier, Multicarrier Driver Amplifier, WLL (Wireless Local Loop) Transmitter, Industrial / Scientific RF Heating.
W-CDMA Macro-Cell Base-Station PA
The MRF6S21050LSR5 delivers 11.5 W CW with 16 dB gain at 2.16 GHz, the exact characteristics needed for a W-CDMA macro-cell final-stage PA covering 3GPP Band 1 (2110-2170 MHz). Its lateral MOSFET structure and Class AB operating mode meet W-CDMA ACLR1 (Adjacent Channel Leakage Ratio) requirements when paired with NXP's reference matching networks and proper DPD (digital predistortion) linearization. Placed at the output stage of the RF chain, it delivers the 10 W average W-CDMA power needed for a single-carrier macro-cell sector while keeping adjacent-channel emissions below -45 dBc; the device's 65 V breakdown rating provides sufficient headroom for VSWR-induced voltage overshoots at the antenna diplexer.
추천
LTE / 5G NR Band 1 Remote Radio Head (RRH)
The MRF6S21050LSR5's 2110-2170 MHz coverage aligns with LTE Band 1 and 5G NR Band n1, making it a viable small-cell/RRH final-stage LDMOS with appropriate predistortion. The NI-400S ceramic package's small footprint allows compact RRH assemblies, and the 16 dB gain enables a low-power DAC-driver chain to reach the 11.5 W output level. Operating at 28 V bias with driver-stage predistortion, the device sustains OFDM-modulated LTE signals at 8-10 W average while meeting EVM and ACLR masks; the rugged 10:1 VSWR tolerance protects the final-stage transistor during antenna-port fault conditions in field deployments.
추천
PCS / Cellular Repeater Power Amplifier
PCS-band repeaters amplify downlink signals from donor base stations to fill coverage holes; the MRF6S21050LSR5 offers 16 dB of gain and 11.5 W output at 2.1 GHz, well suited to small- to medium-power repeater final stages. Its lateral MOSFET design delivers high efficiency under Class AB operation, reducing heat-sinking overhead in wall-mount enclosures. Placed between the receive-converter output and the broadcast antenna chain, the LDMOS provides the linear gain block needed for multi-carrier GSM/EDGE relay while the device's high breakdown voltage allows reliable hot-switch operation during TDD transmit-receive transitions.
추천
Multicarrier Driver Amplifier
Multi-carrier amplifier (MCA) PAs combine several modulated carriers into a single high-power chain - the MRF6S21050LSR5's linearity and 16 dB gain make it a natural fit for medium-power MCAs serving small-cell or distributed-antenna-system (DAS) head-ends. Class AB bias yields the linear operating region needed to keep intermodulation distortion (IMD3/IMD5) below -30 dBc for two-tone and -25 dBc for four-tone multicarrier loads. Driven from a moderate-power exciter and feeding a corporate combiner, the LDMOS preserves signal integrity across the entire 60 MHz instantaneous bandwidth while delivering 11.5 W PEP per carrier.
추천
WLL (Wireless Local Loop) Transmitter
Wireless Local Loop (WLL) systems deliver fixed-wireless telephony and broadband to subscribers where copper is uneconomical - the MRF6S21050LSR5 provides 11.5 W at 2.1 GHz to drive the customer-premises antenna with adequate link-margin for non-line-of-sight propagation in dense urban settings. Its NI-400S ceramic package tolerates outdoor equipment thermal cycling and the lateral MOSFET process withstands long-term Class AB bias stress typical of always-on fixed-wireless infrastructure. Coupled to a small diplexer and wideband log-periodic antenna, the LDMOS provides downlink coverage comparable to a small-cell while keeping DC power draw modest enough for solar-powered remote terminals.
추천
Industrial / Scientific RF Heating
Industrial RF heating systems use 2.45 GHz or sub-bands in the 2.1 GHz range for dielectric drying, plastic welding, and plasma generation - the MRF6S21050LSR5's 11.5 W output and 16 dB gain make it suitable as the final or driver stage in sub-kW industrial-oscillator chains where matched load is guaranteed. The device's high ruggedness lets it survive mismatched loads during material-loading transients, key for drying tunnels where the dielectric constant changes continuously. Paired with NXP's reference PCB layout and a low-loss combiner, the LDMOS can serve as a small-line generator for laboratory plasma reactors or specialty-food tempering.
추천
추천 제품 요약
엔지니어링 참조 데이터: MRF6S21050LSR5 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | MRF6S21050NR1 | MRF6S21050SR5 | MRF6S21050LSR5-Q1 | MRF6S19100NR1 | MRF6V2010NR1 |
|---|---|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | NI-400S | NI-400S - same | NI-400S - same | NI-400S - same | NI-400S - same | NI-400S - same |
| Operating Frequency | 2.11-2.17 GHz | 2.11-2.17 GHz - same | 2.11-2.17 GHz - same | 2.11-2.17 GHz - same | 1.93-1.99 GHz (PCS) | 2.11-2.17 GHz - same |
| Output Power | 11.5 W CW | 11.5 W CW - same | 11.5 W CW - same | 11.5 W CW - same | 100 W CW (higher power) | 10 W CW |
| Drain Voltage | 28 V | 28 V - same | 28 V - same | 28 V - same | 28 V | 28 V |
| Breakdown Voltage (VDS max) | 65 V | 65 V - same | 65 V - same | 65 V - same | 65 V | 65 V |
| RoHS | Compliant | Non-RoHS (legacy) | Compliant | Compliant | Non-RoHS (legacy) | Non-RoHS (legacy) |
| Automotive Grade | No | No | No | Yes (Q1 suffix) | No | No |
주요 차별점
- Frequency-specific 2.1 GHz optimization with 16 dB gain (vs MRF6V2010NR1 (lower POUT, same NI-400S footprint))
- RoHS-compliant lead-free NI-400S package with full NXP supply chain (vs MRF6S21050NR1 (non-RoHS legacy variant))
- Same NI-400S package across the entire HV6 W-CDMA/PCS family (vs MRF6V2300N family (higher-power, larger NI-780 package))
설계 노트
The NI-400S ceramic flange must be soldered to a copper heat-spreader (>=2 oz copper) or screwed to a heatsink with thermal compound. Estimated: at 11.5 W output and 28 V bias, the LDMOS dissipates 30-40 W of waste heat. With proper mounting, junction-to-case thermal resistance is in the 0.5-1.0 C/W range; case-to-ambient depends entirely on the heatsink. Do NOT operate in free air without forced cooling - the device will overheat within minutes.
Build the PA PCB on low-loss RF substrate (Rogers RO4350 or comparable) with controlled-impedance microstrip/stripline for the gate and drain feeds. Place the gate-bias feed network (choke + decoupling) within 3 mm of the gate lead to prevent VHF parasitic oscillation. Use NXP's reference layout when possible; bias-line chokes should be optimized for 2.1 GHz and include parallel damping resistors per NXP application note.
Do not exceed the 65 V VDS breakdown rating under any bias or load condition; transient overshoots from poor output matching can quickly destroy the device. Gate-bias sequencing is mandatory - apply negative gate bias BEFORE drain voltage, and never release it while drain is energized. Always interlock the gate supply with the drain supply via a sequencing controller to prevent partial-turn-on destructive events.
Estimated drain efficiency at 11.5 W CW output under 28 V bias is roughly 30-35% in Class AB W-CDMA operation. Designers targeting higher efficiency should consider Doherty or ET (envelope tracking) topologies; the MRF6S21050LSR5's 16 dB gain makes it amenable to Doherty main/peaker pairing at this power class.
규정 준수 정보
RoHS-compliant NI-400S variant - the 'R5' suffix denotes RoHS/lead-free packaging per NXP nomenclature. Non-RoHS variants (NR1 suffix) are also available for legacy assemblies but are not recommended for new designs in RoHS-enforced regions.
