MRF6VP121KHR5-FR - 1000W LDMOS RF MOSFET, 965-1215 MHz | NXP
부품 번호: MRF6VP121KHR5-FR ✗ 단종| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $285 | $285.00 |
| 10 | $263 | $2,630.00 |
| 100 | $241 | $24,100.00 |
| 500 | $219 | $109,500.00 |
| 1,000 | $198 | $198,000.00 |
MRF6VP121KHR5-FR 개요
An RF power MOSFET is a specialized discrete transistor built on a laterally-diffused metal-oxide-semiconductor process that combines the high breakdown voltage of LDMOS with the high input impedance and ease of biasing characteristic of MOSFETs. Within the RF transistor taxonomy, it sits at the intersection of discrete semiconductors and RF power devices, serving as the final amplification stage in solid-state transmitters where it must deliver hundreds to thousands of watts at radio frequencies while tolerating the large standing-wave-ratio (VSWR) mismatch conditions found in industrial RF heating, particle accelerators, and L-band radar. Compared with bipolar RF power transistors, LDMOS offers higher gain per stage, simpler gate biasing (no negative supply needed for cutoff), and inherent ruggedness under output mismatch.
Key feature highlights include 1000 W peak output power at 1.215 GHz, 21.4 dB typical power gain under pulsed conditions, 50 V drain supply, integrated ESD protection, and built-in input-matching networks that simplify external PCB design. The 50 V supply rail enables fewer series combining stages than a 28 V or 32 V LDMOS device, directly reducing combiner losses in high-power systems. The thermal resistance of the NI-1230 ceramic package supports pulsed-operation duty cycles at full rated power with appropriate heatsinking.
The transistor's laterally-diffused architecture implements an N-channel enhancement-mode structure that requires only a single-polarity gate bias supply, simplifying system-level design relative to depletion-mode parts. Its intrinsic input impedance supports broadband matching, and the device integrates a number of internal protections (ruggedness against infinite VSWR) that allow safe operation into mismatched loads - a critical requirement for industrial and aerospace applications where antenna behavior is unpredictable.
Typical applications for the MRF6VP121KHR5-FR include L-band pulsed radar transmitters operating in the 1030 MHz (secondary surveillance radar/SSR) and 1090 MHz (ADS-B/Mode S) bands, particle accelerator solid-state power amplifiers used in physics and medical isotope production, and industrial RF heating / plasma-generation systems. Its 1000 W pulsed rating also suits long-range air-traffic-control interrogation channels and weather-radar front ends.
For thermal design, the application note recommends mounting the device on a copper spreader with thermal compound and ensuring the case temperature stays below the 200 C absolute maximum; for pulsed operation at typical 1-3% duty cycle, no additional heatsink beyond standard RF pallet cooling is normally required. Designers should keep gate and drain leads short and use low-loss PCB substrates such as Rogers RO4350B for the matching-network traces to preserve the 21 dB gain advantage at 1.215 GHz.
This page synthesizes distributor stock data and design guidance not found in the manufacturer datasheet alone, including parameter proximity analysis for cross-brand L-band alternatives and practical heatsinking tips for pulsed-operation duty cycles.
드롭인 대체품: MRF6VP121KHR5-FR — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
MRF6VP121KHSR6
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
MRF6VP121KHR6
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
BLC10G1000LS
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
MRF6VP121KHR5-FR 최대 정격 & 전기적 특성
| Manufacturer | NXP Semiconductors (formerly Freescale) |
| Part Number | MRF6VP121KHR5-FR |
| 트랜지스터 유형 | LDMOS, N-Channel Enhancement-Mode |
| Technology | Lateral Diffused MOS (LDMOS) |
| Frequency Range | 965 MHz to 1215 MHz (L-band) |
| Drain-Source Voltage (VDS) | 50 V |
| Output Power (Pout, pulsed) | 1000 W at 1215 MHz |
| Power Gain (Gp) | 21.4 dB at 1215 MHz |
| Quiescent Drain Current | 150 mA |
| Test Frequency | 1.215 GHz |
| 패키지 | NI-1230 (ceramic) |
| 실장 유형 | Bolt-down flange, through-hole RF |
| Operation Mode | Pulsed |
| Ruggedness | Designed for high VSWR (rugged against infinite mismatch, per datasheet) |
MRF6VP121KHR5-FR 핀 구성
| 핀 1 | DRAIN (RF OUT) — RF output / drain (50 V supply), connected to matching network |
| 핀 2 | GATE (RF IN) — RF input / gate, driven from pre-driver / gate bias network |
| 핀 Flange | FLANGE (GND/SOURCE) — Source and thermal pad, must be bolted to grounded heatsink |
안전 동작 영역 - DC and Pulsed
일반적인 애플리케이션
MRF6VP121KHR5-FR 적합 용도: 6 애플리케이션s: L-Band ADS-B / Mode S Transmitter, Secondary Surveillance Radar (SSR), Particle Accelerator RF Solid-State PA, Industrial RF Heating / Plasma Generation, Weather / Long-Range L-Band Radar Front End, IFE / Ground-Based IFF Interrogator.
L-Band ADS-B / Mode S Transmitter
The MRF6VP121KHR5-FR is well suited for the final PA stage of ADS-B (1090 MHz) and Mode S transponder transmitters because its tested 1000 W pulsed output at 1.215 GHz and 21.4 dB gain deliver the radar link budget that long-range air-traffic-control interrogation requires. Operating from a 50 V rail permits a single-ended class-C output stage instead of a two-stage lower-voltage combiner, reducing combiner loss and improving overall efficiency. The NI-1230 ceramic flange bolts directly to the avionics chassis cold plate and the device's VSWR ruggedness protects against antenna-detuning faults at high altitude. Compared with bipolar power transistors, the LDMOS gate requires only a single-polarity bias supply, simplifying the modulator interface.
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Secondary Surveillance Radar (SSR)
Interrogation channels in secondary surveillance radar (1030 MHz uplink) demand high-power L-band pulses with tight rise/fall times, and the MRF6VP121KHR5-FR satisfies this with its 1000 W rated pulsed output into a 50 V supply. The 21.4 dB gain means a single-stage PA chain can be used with a low-power CMOS/SiGe pre-driver, reducing BOM and PCB area. The transistor's LDMOS enhancement-mode gate permits a simple positive-only bias supply, which the radar modulator board can source directly. Built-in VSWR ruggedness tolerates the load mismatch that ground-based antennas exhibit when radomes are wet or iced. Reference NXP application note on L-band pulsed radar transmitters for matching-network starting values.
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Particle Accelerator RF Solid-State PA
Modern compact particle accelerators use pulsed L-band solid-state power amplifier chains instead of legacy klystrons, and the MRF6VP121KHR5-FR is a building block in such 1.3 GHz-class linac PA pallets. Its 1000 W peak at low duty cycle supports the high instantaneous gradient needed for particle acceleration while keeping average dissipation within chassis-cooling reach. The 21.4 dB power gain allows the device to be driven directly from a 50 W pre-driver, minimizing the chain depth. NI-1230 flange-mounting permits easy replacement in modular PA assemblies during accelerator downtime. Designers should consult the NXP MRF6VP121KH datasheet application section for pulsed-bias recommendations specific to accelerator duty cycles.
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Industrial RF Heating / Plasma Generation
Industrial RF heating applicators and plasma generators place extreme mismatch on the final PA stage, and the MRF6VP121KHR5-FR is designed to withstand infinite-VSWR conditions under pulsed operation, making it a robust choice. Delivering 1000 W from a 50 V rail directly drives small-batch dielectric heating loads at 915-1215 MHz with high energy efficiency. The LDMOS gate is straightforward to bias for class-C operation, the typical mode for industrial heating, and the NI-1230 package is straightforward to bolt onto a water-cooled or air-cooled pallet. Reference NXP application note on LDMOS in industrial heating for duty-cycle guidance and matching-network starting points.
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Weather / Long-Range L-Band Radar Front End
Long-range weather-radar transmitters in the 1215 MHz band require high-power pulsed RF amplification that maintains gain over temperature and pulse conditions. The MRF6VP121KHR5-FR's 21.4 dB of gain at 1.215 GHz and 50 V operation gives the radar designer headroom for coaxial-fed antenna arrays without external gain blocks. The NI-1230 ceramic package's bolt-down flange allows mounting on the rear of the antenna feed assembly, minimizing RF cable losses between PA and radiating element. Matched-input networks simplify the radar PCB layout and the LDMOS technology provides the long-term gain stability required for calibrated reflectivity measurements. Reference the NXP MRF6VP121KH family datasheet for pulsed radar thermal analysis.
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IFE / Ground-Based IFF Interrogator
Identification friend-or-foe (IFF) ground interrogators pulse at 1030 MHz with high peak power and the MRF6VP121KHR5-FR meets this requirement with its 1000 W pulsed output and 21.4 dB gain. The 50 V drain rail cuts the combiner loss versus an equivalent 28 V power stage, improving overall ground-station efficiency. The LDMOS gate is enhancement-mode, so the interrogator modulator does not need to drive a negative bias supply for cutoff. The NI-1230 ceramic package bolts directly onto the field-station's RF pallet and its ruggedness tolerates the antenna VSWR variation seen with rotating ground arrays. Designers should consult the NXP application note for IFF PA chain example schematics.
추천
추천 제품 요약
엔지니어링 참조 데이터: MRF6VP121KHR5-FR — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | MRF6VP121KHSR6 | MRF6VP121KHR6 | BLC10G1000LS |
|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors - same | NXP Semiconductors - same | Ampleon - cross-brand |
| Package | NI-1230 | NI-1230 - same | NI-1230 - same | NI-1230 (verify pinout) - same outline |
| Drain Voltage | 50 V | 50 V | 50 V | 50 V (class-equivalent rating) |
| Pulsed Output Power | 1000 W | 1000 W | 1000 W | 1000 W (L-band class) |
주요 차별점
- Factory-on tape-and-reel orientation optimized for high-volume lines (vs MRF6VP121KHSR6)
- Documented as NXP/Freescale-internal latest datasheet revision when used as MRF6VP121KHR5-FR base (vs MRF6VP121KHR6)
- Cross-brand L-band equivalent available (vs BLC10G1000LS)
설계 노트
Estimated: at 1000 W pulsed output at 10% duty cycle and 60% drain efficiency, average dissipation is roughly 67 W. Using a typical NI-1230 thermal resistance of 0.15 C/W junction-to-flange, a flange temperature of 65 C requires a heatsink-to-ambient thermal resistance below approximately 1.6 C/W. Use a thin (50-100 um) layer of high-performance thermal compound and torque the mounting screws to the NXP datasheet-recommended value of 0.6-0.8 N*m to avoid flange warping.
Use a low-loss PCB substrate such as Rogers RO4350B or RO4003C for the input and output matching networks to preserve gain; FR-4 introduces several tenths of a dB loss at 1215 MHz and erodes the 21.4 dB gain advantage. Keep the gate and drain leads to the device as short as possible and place the gate bias-tee capacitor no more than 5 mm from the gate pin. Use a continuous ground plane on the second layer tied to the flange through multiple plated vias.
Do not exceed the 50 V maximum VDS rating even under transient conditions - the LDMOS drain can avalanche under load-mismatch conditions if the supply rail is not clamped. Use a transient voltage suppressor rated for 50 V DC stand-off on the drain rail. Also note that the "-FR" tape-and-reel suffix refers to reel orientation only and does not affect datasheet electrical ratings.
규정 준수 정보
RF power transistor in NI-1230 ceramic flange-mount package. RoHS/REACH/lead-free flags were not present in the verified web data; treat as 'unknown' pending confirmation from the manufacturer's product-compliance statement. AEC-Q100 does not apply (RF power discrete).
