SRF7S27125HSR3 - 125W RF Power LDMOSFET, 27V | NXP Semiconductors
부품 번호: SRF7S27125HSR3 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $145 | $145.00 |
| 10 | $132.5 | $1,325.00 |
| 50 | $122 | $6,100.00 |
| 100 | $112.5 | $11,250.00 |
| 500 | $99.8 | $49,900.00 |
SRF7S27125HSR3 개요
An RF power LDMOSFET is a specialized power transistor optimized for high-frequency, high-power signal amplification in the megahertz to gigahertz range. It belongs to the broader category of RF power transistors within discrete semiconductors, sitting above generic MOSFETs in the hierarchy: RF power transistor -> power MOSFET -> MOSFET -> discrete semiconductor. LDMOSFETs are distinguished by their laterally diffused drain structure, which provides higher breakdown voltage, better thermal stability, and higher gain-bandwidth product than conventional vertical MOSFETs, making them the de-facto standard for modern UHF and VHF broadcast transmitters, radar, and pulsed-RF applications.
Key features of the SRF7S27125HSR3 include 125 W typical CW output power, 27 V drain-source operating voltage, high gain across UHF, integrated ESD protection, internal input matching for broadband operation, and a thermally enhanced NI-880S ceramic-metal flange package rated for high continuous dissipation. The part is characterized for harsh thermal environments typical of base-station and broadcast PA assemblies.
Typical applications include UHF digital TV transmitters (DVB-T/T2, ATSC, ISDB-T), DAB (Digital Audio Broadcasting) transmitters, industrial RF heating and drying equipment, RF plasma generation systems, particle accelerator drivers, and high-power CW or pulsed scientific/medical RF sources. The 27 V bias rail aligns with broadcast-industry standardized power supply architectures.
A critical design consideration is flange-mount thermal management. The ceramic NI-880S package must be bolted to a heatsink or cold plate with adequate thermal compound; insufficient mounting pressure or missing thermal interface material will cause the junction temperature to exceed rated limits at 125 W CW operation. The drain bias sequencing (gate voltage must be applied before drain voltage during turn-on) must also be respected to prevent device damage from drain-current transients.
This page synthesizes manufacturer datasheet characteristics, distributor stock and pricing snapshots, and application-level design guidance not typically consolidated on distributor product pages.
드롭인 대체품: SRF7S27125HSR3 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: SRF7S27125HSR3 (동일 폼 팩터 및 풋프린트) — 차이점: Drain-Source Voltage (VDS), Mode of Operation, Mounting Type, Package.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
SRF7S27125HS
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
MRF6V2150NBR5
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
$54.2 / 개
데이터시트 보기 →MRF6VP2600NBR5
✅ 드롭인 ⚠️ 사양 미검증📋 참조 대체품 (카탈로그에 없음)
BLF888A
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
BLF888
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
SRF7S27125HSR3 최대 정격 & 전기적 특성
| Product Type | RF Power LDMOSFET |
| Manufacturer | NXP Semiconductors (formerly Freescale) |
| Drain-Source Voltage (VDS) | 27 V (typical operating) |
| Output Power (CW) | 125 W |
| Frequency Band | UHF (470 MHz to 860 MHz typical) |
| Technology | LDMOS (Laterally Diffused MOSFET) |
| 패키지 | NI-880S ceramic flange-mount |
| 실장 유형 | Flange-mount, bolt-down (2 tabs) |
| Polarity | N-Channel |
| Mode of Operation | CW (continuous wave) capable |
| Application Domain | UHF broadcast transmitter PA, industrial RF |
| Input Matching | Internal, broadband |
| ESD Protection | Integrated |
SRF7S27125HSR3 핀 구성
| 핀 1 | Gate — Gate bias input (negative quiescent bias, then ramp to class-AB quiescent) |
| 핀 2 | Drain — Drain bias (27 V nominal) and RF output |
| 핀 3 | Source — Source / ground (connected to flange) |
| 핀 Flange | Source / Thermal — Bolt-down flange - electrically source, thermally heatsink interface |
일반적인 애플리케이션
SRF7S27125HSR3 적합 용도: 7 애플리케이션s: UHF Digital Television Transmitters (DVB-T/T2, ATSC, ISDB-T), Digital Audio Broadcasting (DAB / DAB+) Transmitters, Industrial RF Heating and Drying Systems, RF Plasma Generation for Semiconductor Processing, Particle Accelerator RF Driver Stages, Radar and Pulsed-RF Power Amplifiers, High-Power Scientific and Medical RF Sources.
UHF Digital Television Transmitters (DVB-T/T2, ATSC, ISDB-T)
The SRF7S27125HSR3's 125 W CW output power at 27 V drain bias makes it a strong fit for driver and final-stage PA use in UHF digital television transmitters covering the 470 MHz to 860 MHz DVB-T/T2, ATSC, and ISDB-T broadcast bands. The device's LDMOS broadband gain and internal input matching allow one part to cover an entire UHF TV channel group without per-band retuning. Placed in the PA50 ohm-imbalanced circuit topology with a Wilkinson combiner, it drives the next stage or combines with parallel units to reach 500 W to 1 kW at the antenna feed. The ceramic NI-880S flange bolting into a cold plate keeps the junction within rated thermal limits under continuous COFDM modulation duty cycles. Unlike bipolar transistors of the same power class, LDMOS provides higher gain (>15 dB) and lower thermal resistance, simplifying drive-stage design and reducing overall transmitter BOM cost. Confirmed application context per NXP broadcast RF product portfolio.
추천
Digital Audio Broadcasting (DAB / DAB+) Transmitters
The SRF7S27125HSR3 supports 125 W CW output in the L-band and UHF ranges where DAB and DAB+ digital audio broadcasting operate, particularly in Band III (170 MHz to 240 MHz) and Band IV/V UHF allocations. Its LDMOS technology delivers high linearity required for OFDM-modulated DAB signals with high peak-to-average ratios (around 10 dB), maintaining spectral mask compliance when the PA is backed off from P1dB. Designers commonly use the SRF7S27125HSR3 in a class-AB push-pull or single-ended PA configuration preceded by a digital pre-correction (DPD) engine to meet ETSI EN 302 077 spectral emission limits. The 27 V rail is compatible with standard broadcast power supply modules used throughout the DAB transmitter industry.
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Industrial RF Heating and Drying Systems
Industrial RF heating at 27.12 MHz ISM and the higher UHF ISM bands uses high-power CW amplifiers to drive electrodes in wood-drying, plastic-welding, and food-processing applications. The SRF7S27125HSR3 at 125 W CW in UHF provides a building block for industrial RF generators requiring stable, high-duty-cycle output without the pulsation artifacts of switching amplifiers. The NI-880S ceramic flange is bolted directly to a water-cooled or forced-air heatsink inside the RF generator cabinet, providing continuous thermal headroom for 24/7 industrial duty cycles. Compared with vacuum tubes (e.g., 4CX250B), the LDMOS device requires no warm-up time, lower quiescent power, and significantly higher gain, simplifying the driver-stage design of industrial RF generators.
추천
RF Plasma Generation for Semiconductor Processing
Semiconductor plasma-etch and plasma-deposition tools require stable RF power at 13.56 MHz to 100 MHz and beyond, typically at 50 ohm load impedances matched to plasma chamber characteristics. The SRF7S27125HSR3's high CW power capability and LDMOS thermal ruggedness support plasma-source amplifier stages where continuous RF excitation is needed to sustain plasma density. Its internal matching simplifies the 50-ohm output network and reduces reflected-power sensitivity in plasma impedance-drift conditions. Designers integrate the device with an automatic impedance-matching network (tunable L-C) ahead of the plasma chamber to maintain constant delivered power as the plasma impedance varies during process recipes.
추천
Particle Accelerator RF Driver Stages
Particle accelerator RF systems (cyclotrons, synchrotrons, linear accelerators) require CW or long-pulse RF power at frequencies from tens of MHz to several hundred MHz to energize RF cavity structures. The SRF7S27125HSR3 with 125 W CW output and broadband UHF gain supports driver and intermediate amplifier stages in medical and research accelerators, often combined with higher-power tubes (e.g., IOTs or klystrons) in the final stage. The LDMOS device's high gain (>15 dB) and stable phase response across the UHF band simplify phase-stabilized amplifier chains used for accelerator cavity field control. The 27 V rail matches standard accelerator-driver power supply architectures.
추천
Radar and Pulsed-RF Power Amplifiers
UHF-band radar systems (e.g., air traffic control primary radar at 1.3 GHz down-converted stages, weather radar, and marine radar with UHF sub-systems) use pulsed-RF power amplifiers where high peak power and short duty cycles are required. The SRF7S27125HSR3, while specified for CW operation, supports pulsed-RF operation at higher peak power with appropriately managed duty cycle, leveraging LDMOS technology's thermal capacity. Its broadband input matching simplifies wide-bandwidth radar pulse amplification without per-radar-band retuning. The ceramic flange package is bolted to a high-performance heatsink to manage the elevated thermal transients characteristic of pulsed-RF operation.
추천
High-Power Scientific and Medical RF Sources
Medical RF applications including diathermy, MRI RF coils, and hyperthermia cancer-treatment systems require stable CW RF power in the UHF and lower-microwave bands at power levels of 50 W to 500 W. The SRF7S27125HSR3 at 125 W CW provides the right power envelope for clinical RF therapy devices where continuous, controlled RF energy must be delivered to tissue or RF coils. The device's bias stability and thermal performance under continuous duty make it suitable for medical-grade RF source design where consistent output is critical for treatment reproducibility. The 27 V supply rail is compatible with medical-grade 24 V to 28 V DC bus architectures.
추천
추천 제품 요약
엔지니어링 참조 데이터: SRF7S27125HSR3 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | SRF7S27125HS | MRF6V2150NBR5 | MRF6VP2600NBR5 | BLF888A | BLF888 |
|---|---|---|---|---|---|---|
| Package | NI-880S ceramic flange | NI-880S - same | NI-780 (OM-780 equivalent) | NI-780 (OM-780 equivalent) | NI-880S compatible ceramic flange | NI-880S compatible ceramic flange |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | Ampleon | Ampleon |
| Output Power (CW) | 125 W | 125 W | 150 W | 600 W | 150 W | 100 W |
| Drain Voltage | 27 V | 27 V | 50 V | 50 V | 50 V | 50 V |
| Technology | LDMOS | LDMOS | LDMOS | LDMOS | LDMOS | LDMOS |
| Frequency Band | UHF (470-860 MHz) | UHF (470-860 MHz) | UHF | VHF-UHF | UHF DVB-T | UHF DVB-T |
| Mode | CW (continuous wave) | CW | CW / pulsed | CW / pulsed | CW / DVB-T pulsed | CW / DVB-T pulsed |
| Mounting Type | Bolt-down ceramic flange | Bolt-down ceramic flange - same | Bolt-down ceramic flange | Bolt-down ceramic flange | Bolt-down ceramic flange | Bolt-down ceramic flange |
| Approx. Distributor Price (qty 1, USD as of 2026-10-16) | 145.00 | 140.00 | 180.00 | 260.00 | 170.00 | 160.00 |
주요 차별점
- Lower drain-voltage 27 V operation vs 50 V class competitors (vs BLF888A (50 V))
- 125 W CW rating vs BLF888 at 100 W CW (vs BLF888)
- Same NI-880S ceramic flange family as cross-brand alternatives (vs BLF888A (Ampleon))
- NXP/Freescale factory-fresh stock availability through authorized channels (vs Independent distributor factory-excess)
설계 노트
Estimated: At 125 W CW output into a UHF load with typical 50% to 60% drain efficiency, the SRF7S27125HSR3 must dissipate on the order of 90 W to 125 W of waste heat. The NI-880S ceramic flange must be bolted to a sufficiently large heatsink or water-cooled cold plate using thin, high-quality thermal interface material. Per NXP RF power transistor application notes, mounting torque on the bolt tabs is critical to minimize thermal-interface thermal resistance. Without adequate cooling, junction temperature will exceed rated limits within minutes at full CW operation.
The SRF7S27125HSR3 requires gate-bias-before-drain-voltage sequencing. Apply gate voltage first (at or below pinch-off, typically around -2 V to -3 V) and ramp to class-AB quiescent (around +2.5 V) before enabling the 27 V drain supply. Reverse sequencing causes uncontrolled drain-current transients that can permanently damage the LDMOS die. Conversely, on power-down, remove drain voltage first and then gate bias. NXP RF power LDMOSFET application notes document the recommended sequencer circuits.
The NI-880S ceramic flange package is not PCB-mounted; it is bolted directly to a heatsink or chassis. The RF input and output traces on the host PCB must use low-loss substrate (Rogers RO4003C or similar) with controlled 50 ohm impedance. Keep RF traces short and use a 50 ohm SMA or N-type connector at the PCB edge. Place gate and drain bias feed networks (choke + decoupling capacitor) close to the package leads to minimize parasitic inductance that can cause instability at UHF.
RF power LDMOSFETs are susceptible to low-frequency parametric oscillation when the input and output networks have insufficient isolation. Ensure the input matching network and output matching network have adequate stop-band attenuation at the difference frequency between input and output tones. Per NXP RF power amplifier design guidelines, add a small series gate resistor (typically 1 ohm to 5 ohm) and ferrite beads on the drain bias feed to suppress out-of-band oscillations. A stability analyzer or network analyzer should be used to verify oscillation-free operation across the full bias and drive range.
The source leads of the SRF7S27125HSR3 are internally connected to the bolt-down flange; the flange is both the RF ground reference and the heatsink interface. Ensure the bolt-down surface is clean, flat, and free of oxidation. Use a thin (less than 50 micrometer) thermal interface material such as indium foil or high-performance silicone-free thermal compound. Avoid thermal pads thicker than 100 micrometer, which can push the device past its thermal design point at full CW operation.
규정 준수 정보
NI-880S ceramic flange RF power transistor package - traditionally offered in both RoHS-compliant and lead-containing variants depending on order code suffix. Specific RoHS/REACH/lead-free status for SRF7S27125HSR3 suffix is [DATA_NEEDED]. AEC-Q100 not applicable - this is a discrete RF power transistor, not an automotive-qualified IC.
