MRF6V2150NBR5 - 150W 50V RF MOSFET TO-272 | NXP
MPN: MRF6V2150NBR5 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $78.5 | $78.50 |
| 10 | $72.1 | $721.00 |
| 50 | $65.4 | $3,270.00 |
| 100 | $60 | $6,000.00 |
| 500 | $54.2 | $27,100.00 |
MRF6V2150NBR5 Overview
An RF power MOSFET (radio-frequency power metal-oxide-semiconductor field-effect transistor) is a discrete semiconductor device built specifically to amplify high-frequency alternating signals at significant power levels. Within the broader taxonomy, RF power MOSFETs sit under power transistors, then power semiconductors, then discrete semiconductors. They use a lateral die layout (current flows horizontally through the silicon) rather than the vertical structure of low-frequency power MOSFETs - this trade-off reduces die capacitance and enables multi-hundred-MHz operation at the cost of higher on-resistance per unit area. Lateral MOSFETs also exhibit a negative temperature coefficient of drain current, which provides automatic current sharing when multiple devices are paralleled for higher output power.
The MRF6V2150NBR5 features a 110 V VDS rating, an unmatched input/output impedance (allowing the designer full flexibility in the matching network), and an operating frequency envelope of 10-450 MHz that covers the industrial-scientific-medical (ISM) bands, FM broadcast, VHF land-mobile radio, and amateur radio segments from 6 m through 80 m. The device is characterized for CW service, which means its thermal and electrical ratings assume steady-state operation rather than pulsed radar-like duty cycles.
Typical applications include CW drivers for 87.5-108 MHz FM broadcast transmitters, VHF land-mobile base-station power amplifiers in the 136-174 MHz band, 27 MHz CB/industrial radio final stages, and broadband laboratory amplifiers driving inductive or resistive test loads. Designers pair this part with lumped-element or microstrip matching networks and a heavy copper or forced-air heatsink because the TO-272WB-4 ceramic package is designed to be bolted directly to a chassis heatsink for low thermal resistance.
When designing with this MOSFET, the most critical parameter is dissipated heat at the case. Estimated: at POUT = 150 W CW with 25 dB gain and 60% drain efficiency, the device dissipates roughly 100 W as heat, requiring a substantial heatsink with case temperature held below the 200 C maximum rating. Always mount with proper torque and thermal compound per the datasheet mechanical drawing.
This page synthesizes distributor availability, drop-in alternatives from the same NXP MRF6V family, and practical CW amplifier design notes that go beyond the manufacturer datasheet's typical characteristics table.
Drop-in alternatives for MRF6V2150NBR5 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with MRF6V2150NBR5 (same form factor and footprint) — differing in Drain-Source Voltage (VDS), Mode of Operation, Mounting Type, Package.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
MRF6V2150NR1
✅ Drop-In📋 Reference alternative (not in catalog)
MRF6V2150NBR1
✅ Drop-In📋 Reference alternative (not in catalog)
MRF6V2150N
✅ Drop-In📋 Reference alternative (not in catalog)
MRF6V2150NBR5 Maximum Ratings & Electrical Characteristics
| Transistor Type | N-Channel Enhancement-Mode Lateral RF Power MOSFET |
| Drain-Source Voltage (VDS) | 110 V |
| Drain-Source Voltage (VDSS, max) | 110 V |
| Operating Drain Voltage (VDD) | 50 V |
| Output Power (POUT, CW) | 150 W |
| Operating Frequency Range | 10 MHz to 450 MHz |
| Power Gain (Gps) | 25 dB |
| Package | TO-272 WB-4 (TO-272W, 5-pin, ceramic, bolt-down) |
| Mounting Type | Chassis/Surface Mount (bolt-down with ceramic insulator) |
| Configuration | Single-ended, unmatched |
| Mode of Operation | CW (continuous wave), large-signal |
| MSL Level | Not applicable (hermetic ceramic package) |
| Operating Temperature Range | -40 C to +150 C (TJ max 200 C) |
MRF6V2150NBR5 Pin Configuration
| Pin 1 | Gate — Gate input (RF input, DC bias pin) |
| Pin 2 | Gate — Gate input (parallel to pin 1 for low-inductance gate drive) |
| Pin 3 | Drain — Drain (RF output, DC supply) - on the package flange for heatsink mounting |
| Pin 4 | Source — Source (ground) |
| Pin 5 | Source — Source (parallel to pin 4 for low-inductance grounding) |
DC Safe Operating Area (TO-272 WB-4 package, TC = 25 C)
Typical Applications
MRF6V2150NBR5 is suitable for 6 applications: FM Broadcast Driver/Final Stage, VHF Land-Mobile Radio Base Station PA, 27 MHz CB / Industrial Radio Final Stage, Broadband Laboratory RF Amplifier, Industrial / Medical / Scientific (ISM) RF Power Source, Amateur Radio HF/VHF Power Amplifier.
FM Broadcast Driver/Final Stage
The MRF6V2150NBR5's 150 W CW output power at 50 V drain supply and 25 dB power gain makes it a direct fit for 87.5-108 MHz FM broadcast driver and sub-150 W final amplifier stages. Its operating band fully covers the commercial FM broadcast spectrum, and the lateral MOSFET structure provides the negative temperature coefficient that stabilizes bias against thermal runaway in continuous-duty commercial broadcasting. Placed as a final stage, it can deliver the full 150 W with a single low-power exciter; as a driver it can push higher-power paired-MOSFET finals to 600 W or more. The unmatched input/output allows the broadcast amplifier designer to optimize the matching network for the specific harmonic filter and combiner required by FCC or ETSI broadcast masks.
Recommended
VHF Land-Mobile Radio Base Station PA
The MRF6V2150NBR5 covers the entire 136-174 MHz VHF land-mobile band with 150 W CW output capability, well-suited for commercial two-way radio base-station power amplifiers serving public-safety, taxi, fleet, and utility dispatch networks. The 25 dB gain allows a low-level PLL synthesizer output to drive the final stage directly, simplifying the exciter chain and reducing bill-of-materials cost. The unmatched design lets the RF engineer tune the output network for the specific land-mobile channel frequency, while the 110 V VDS breakdown rating handles the load-mismatch transients that occur when the antenna is disconnected or VSWR rises due to weather damage. Continuous-duty ratings at 50 V match the -48 V nominal supply commonly used in base-station DC plants after a step-up converter.
Recommended
27 MHz CB / Industrial Radio Final Stage
The 27 MHz Citizens Band and 27 MHz industrial radio band falls comfortably within the MRF6V2150NBR5's 10-450 MHz operating range, and the device's 150 W CW output is well-matched to high-power CB linear amplifier finals and 27 MHz industrial telemetry transmitters. Designers using this part in 27 MHz linear amplifiers must pay attention to the heatsink thermal budget - at 150 W CW with 60% drain efficiency the device dissipates approximately 100 W, requiring a forced-air heatsink rated below 1.0 C/W. The lateral MOSFET structure is also more rugged than bipolar transistors under load-mismatch conditions, an important consideration for amateur radio amplifiers driving non-resonant antennas.
Recommended
Broadband Laboratory RF Amplifier
The MRF6V2150NBR5's wide 10-450 MHz operating range and unmatched input/output make it a versatile building block for broadband laboratory RF amplifiers used in EMC test houses, RF susceptibility test systems, and general-purpose lab drivers. Designers can sweep the device across hundreds of MHz without changing the active device, only retuning the broadband matching network. The 150 W CW rating provides the headroom needed for conducted-immunity testing per IEC 61000-4-6, while the lateral MOSFET's high gain reduces the gain stages required ahead of the final. The NXP datasheet's typical characteristics curves span the full frequency range, giving the lab designer a reliable starting point for matching network synthesis.
Recommended
Industrial / Medical / Scientific (ISM) RF Power Source
The MRF6V2150NBR5 is explicitly designed for ISM applications per the NXP datasheet, which includes RF sources for industrial heating, plasma generation, medical diathermy, and scientific particle accelerators. The 150 W CW continuous-duty rating at 50 V drain supply supports the sustained operation required by these applications - unlike pulsed radar or communications amplifiers, ISM sources must deliver uninterrupted RF power for minutes or hours. The 110 V VDS breakdown rating protects the device from the reactive load mismatch typical of plasma and inductive-heating loads, while the negative temperature coefficient of lateral MOSFETs enables safe paralleling for higher-power systems that require 300 W to 1 kW RF sources.
Recommended
Amateur Radio HF/VHF Power Amplifier
Amateur radio operators building high-power HF and VHF amplifier stations can use the MRF6V2150NBR5 as a final stage for 10-450 MHz coverage spanning the 80 m, 40 m, 20 m, 15 m, 10 m, 6 m, and 2 m amateur bands. The 150 W CW output provides a solid legal-limit-class amplifier or driver for a higher-power paired-MOSFET final, and the lateral MOSFET structure provides much better linearity than bipolar transistors in SSB and CW service. The unmatched input/output gives the amateur designer full control over the harmonic filter and output network - critical for meeting FCC spurious-emission limits in the amateur service.
Recommended
Recommended Products Summary
Engineering reference data for MRF6V2150NBR5 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | MRF6V2150NR1 | MRF6V2150NBR1 | MRF6V2150N |
|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | TO-272 WB-4 | TO-272 WB-4 - same | TO-272 WB-4 - same | TO-272 WB-4 - same |
| Drain-Source Voltage (max) | 110 V | 110 V | 110 V | 110 V |
| Operating Drain Voltage | 50 V | 50 V | 50 V | 50 V |
| Output Power (CW) | 150 W | 150 W | 150 W | 150 W |
| Operating Frequency Range | 10 MHz to 450 MHz | 10 MHz to 450 MHz | 10 MHz to 450 MHz | 10 MHz to 450 MHz |
| Power Gain | 25 dB | 25 dB | 25 dB | 25 dB |
| Carrier Format | Tape & Reel (BR5 suffix) | Carrier Tray (R1 suffix) | Tape & Reel (BR1 suffix, base family) | Tape & Reel (base variant) |
Key Differentiators
- Tape-and-reel carrier format for automated assembly (vs MRF6V2150NR1)
- Same-die drop-in compatibility across the MRF6V2150N family (vs MRF6V2150NBR1)
- Base-family variant availability (vs MRF6V2150N)
Design Notes
At 150 W CW output with typical 60% drain efficiency, the MRF6V2150NBR5 dissipates approximately 100 W as heat. Estimated: using TC max of 200 C and theta_JC of approximately 0.15 C/W, the case temperature must be held below 185 C, requiring a forced-air heatsink with thermal resistance below 1.0 C/W. Mount the TO-272WB-4 ceramic flange with thermal compound and a beryllium-oxide or alumina insulator; always respect the NXP datasheet mechanical drawing for mounting hardware torque and insulator breakdown voltage.
Although the TO-272WB-4 is primarily a chassis-mount package, designers building microstrip matching networks should use a PTFE substrate (Rogers RO4003C or RO4350B) for the gate and drain matching traces, with the gate trace as short as possible to minimize loop inductance. Place the gate bias decoupling network (a 1 uF tantalum bypass plus 100 nF and 10 nF shunt capacitors) within 5 mm of the gate pins. Use a ground-plane via fence around the source pins to maintain low-inductance grounding.
Do not exceed the 110 V VDS breakdown rating - this includes inductive load-mismatch transients that can easily double the DC drain voltage. Always include a drain transient suppressor (e.g., a TVS diode or RC snubber) sized for the worst-case load VSWR. Do not operate the device in pulsed radar service beyond the CW thermal limits stated in the datasheet, and do not parallel devices without matching gate-source resistors to suppress parasitic oscillations from the negative temperature coefficient.
When building a broadband 10-450 MHz amplifier, design the input matching network for a Q of 1-2 at the lowest operating frequency (10 MHz) and the output matching network for the same Q at the highest frequency (450 MHz). This prevents gain peaking that could cause instability at band edges. Use a directional coupler on the output to monitor load VSWR and trigger the RF drive shutdown if VSWR exceeds 3:1 to protect the device from mismatch transients.
Compliance Information
Compliance status was not explicitly stated in the verified distributor listings as of 2026-10-16. The TO-272WB-4 ceramic package historically used beryllium-oxide insulators - check the latest NXP product page or PCN documents for the current RoHS and lead-free declaration before specifying this part for compliance-only designs.
