STB30N60DM2AG - 600V 30A N-Channel MDmesh DM2 Power MOSFET | STMicroelectronics
MPN: STB30N60DM2AG β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $3.42 | $3.42 |
| 10 | $3.08 | $30.80 |
| 100 | $2.74 | $274.00 |
| 500 | $2.46 | $1,230.00 |
| 1,000 | $2.19 | $2,190.00 |
Drop-in alternatives for STB30N60DM2AG β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
STB30N60DM2AG-1
β Drop-Inπ Reference alternative (not in catalog)
STB30N60M2-EP
β Drop-Inπ Reference alternative (not in catalog)
STB30N60DM2
β Drop-Inπ Reference alternative (not in catalog)
IPB30N60S5
β Drop-Inπ Reference alternative (not in catalog)
FCH30N60
β Drop-Inπ Reference alternative (not in catalog)
STB30N60DM2AG Maximum Ratings & Electrical Characteristics
| Polarity | N-Channel |
| Drain-Source Voltage (VDS) | 600 V |
| Continuous Drain Current (ID) at 25Β°C | 30 A |
| Continuous Drain Current (ID) at 100Β°C | 19 A |
| Pulsed Drain Current (IDM) | 120 A |
| Gate-Source Voltage (VGS) | Β±25 V |
| Power Dissipation (PD) | 250 W |
| On-Resistance (RDS(on)) typical | 0.099 ohm |
| On-Resistance (RDS(on)) max | 0.119 ohm |
| Gate Charge (Qg) | 60 nC |
| Input Capacitance (Ciss) | 2100 pF |
| Output Capacitance (Coss) | 120 pF |
| Reverse Transfer Capacitance (Crss) | 5 pF |
| Operating Junction Temperature | -55Β°C to +150Β°C |
| Package | D2PAK (TO-263) |
| Mounting Type | Surface Mount |
| RoHS Status | Compliant |
| Halogen Free | Yes |
STB30N60DM2AG Pin Configuration
| Pin 1 | Gate β Gate drive input |
| Pin 2 | Drain β Drain connection (tab) |
| Pin 3 | Source β Source connection |
Safe Operating Area
Typical Applications
STB30N60DM2AG is suitable for 6 applications: Switch-Mode Power Supplies (SMPS), Power Factor Correction (PFC), DC-DC Converters, Motor Control, Solar Inverters, Welding Equipment.
Switch-Mode Power Supplies (SMPS)
The STB30N60DM2AG is ideal for SMPS due to its 600V rating and low on-resistance, enabling high efficiency in AC-DC converters. Its fast switching speed reduces switching losses, and the low RDS(on) minimizes conduction losses. In a typical flyback or forward converter, the MOSFET switches at frequencies up to 100 kHz, and the low gate charge (60 nC) simplifies gate drive design. The D2PAK package allows efficient heat dissipation, ensuring reliable operation at high power levels. Compared to IGBTs, the MOSFET offers faster switching, which is beneficial for reducing transformer size and improving transient response.
Recommended
Power Factor Correction (PFC)
In PFC circuits, the STB30N60DM2AG operates in boost converter topology to shape the input current waveform. Its 600V breakdown voltage provides ample margin for the boosted output voltage (typically 400V). The low on-resistance (0.099 ohm) minimizes conduction losses, improving overall efficiency. The fast body diode reduces reverse recovery losses during continuous conduction mode. The device's high dv/dt capability ensures stable operation under transient conditions. With a gate charge of 60 nC, the gate driver can switch the MOSFET at high frequencies (up to 200 kHz) with minimal losses, enabling compact PFC designs.
Recommended
DC-DC Converters
The STB30N60DM2AG is well-suited for DC-DC converters, particularly in isolated topologies like full-bridge and half-bridge. Its 600V rating allows operation from high-voltage input rails (up to 400V). The low on-resistance reduces conduction losses, while the fast switching speed minimizes switching losses, enabling high-frequency operation and smaller magnetic components. The device's thermal resistance of 0.5Β°C/W allows efficient heat sinking, ensuring reliable operation at high power densities. In a typical full-bridge converter, the MOSFETs are driven at 100 kHz, and the low gate charge simplifies the gate drive circuit.
Recommended
Motor Control
In motor control applications, the STB30N60DM2AG is used in three-phase inverter stages for driving AC motors. Its 600V rating is suitable for 400V bus systems, and the low on-resistance minimizes conduction losses in the inverter. The fast switching speed reduces EMI and improves efficiency. The device's ruggedness ensures reliable operation under inductive load switching. In a typical VFD (variable frequency drive), the MOSFETs are switched at 20 kHz, and the low gate charge allows simple gate drive design. The D2PAK package provides good thermal performance, enabling continuous operation at high currents.
Recommended
Solar Inverters
The STB30N60DM2AG is used in solar inverter systems for DC-AC conversion. Its 600V rating is ideal for the high-voltage DC bus (typically 400V) from solar panels. The low on-resistance reduces conduction losses, improving the overall efficiency of the inverter. The fast switching speed enables high-frequency PWM, reducing the size of output filters. The device's thermal performance allows operation in outdoor environments with proper heatsinking. In a typical string inverter, the MOSFETs are used in a full-bridge topology, and the low gate charge simplifies the gate drive design.
Recommended
Welding Equipment
In welding equipment, the STB30N60DM2AG is used in the inverter stage to convert DC to high-frequency AC for the welding arc. Its 600V rating handles the high input voltage, and the low on-resistance minimizes losses. The fast switching speed allows high-frequency operation, reducing transformer size and weight. The device's ruggedness ensures reliable operation under harsh conditions. In a typical inverter welder, the MOSFETs are switched at 50 kHz, and the low gate charge enables efficient gate drive. The D2PAK package provides good thermal management, essential for continuous high-current operation.
Recommended
Recommended Products Summary
Engineering reference data for STB30N60DM2AG β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | STB30N60DM2AG-1 | STB30N60M2-EP | IPB30N60S5 |
|---|---|---|---|---|
| Package | D2PAK (TO-263) | D2PAK (TO-263) - same | D2PAK (TO-263) - same | D2PAK (TO-263) - same |
| Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics | Infineon |
| Drain-Source Voltage (VDS) | 600 V | 600 V | 600 V | 600 V |
| Continuous Drain Current (ID) at 25Β°C | 30 A | 30 A | 30 A | 30 A |
| On-Resistance (RDS(on)) typical | 0.099 ohm | 0.099 ohm | 0.099 ohm | 0.1 ohm |
| Gate Charge (Qg) | 60 nC | 60 nC | 60 nC | 65 nC |
| Power Dissipation (PD) | 250 W | 250 W | 250 W | 255 W |
| Automotive Grade | No | Yes (AEC-Q101) | No | No |
Key Differentiators
- Automotive grade option available (vs STB30N60DM2AG-1)
- MDmesh DM2 technology (vs STB30N60M2-EP)
- Lower on-resistance than cross-brand alternatives (vs IPB30N60S5)
Design Notes
The STB30N60DM2AG has a maximum power dissipation of 250W at 25Β°C case temperature. With a junction-to-case thermal resistance of 0.5Β°C/W, a heatsink is required for high-power operation. For example, at 100W dissipation, the junction temperature rise is 50Β°C above case temperature. Ensure adequate heatsinking and airflow to keep the junction temperature below 150Β°C.
For the D2PAK package, ensure the exposed pad (drain) is soldered to a large copper area for heat dissipation. Use multiple vias to connect the pad to inner layers. Place the gate drive circuit close to the gate pin to minimize parasitic inductance. Use a gate resistor (typically 10 ohm) to control switching speed and reduce ringing.
Do not exceed the maximum gate-source voltage of Β±25V. Use a gate driver with appropriate voltage levels (typically 10-15V) to fully enhance the channel. Ensure the drain-source voltage does not exceed 600V, especially during transients. Consider the body diode reverse recovery characteristics in bridge topologies to avoid excessive losses.
Compliance Information
RoHS compliant and halogen-free per ST datasheet. Not AEC-Q100 qualified; use STB30N60DM2AG-1 for automotive.